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    RFG50N Price and Stock

    Rochester Electronics LLC RFG50N05

    N-CHANNEL POWER MOSFET
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    DigiKey RFG50N05 Bulk 58
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    Renesas Electronics Corporation RFG50N06LE

    POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.022OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247 - Bulk (Alt: RFG50N06LE)
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    Avnet Americas RFG50N06LE Bulk 4 Weeks 1
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    Renesas Electronics Corporation RFG50N05

    - Bulk (Alt: RFG50N05)
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    Avnet Americas RFG50N05 Bulk 4 Weeks 70
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    • 100 $5.1984
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    Harris Semiconductor RFG50N05L

    50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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    Quest Components RFG50N05L 17
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    Harris Semiconductor RFG50N05

    50A, 50V, 0.022ohm, N-Channel, POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFG50N05 145 1
    • 1 $5.27
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    • 100 $4.95
    • 1000 $4.48
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    Find more RFG50N price and stock on Findchips.com

    RFG50N Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFG50N05 Intersil 50A, 50V, 0.022 ?, N-Channel Power MOSFETs Original PDF
    RFG50N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFG50N05 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFG50N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFG50N05L Fairchild Semiconductor 50A, 50V, 0.022 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFG50N05L Intersil 7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge Original PDF
    RFG50N05L Intersil 50A, 50V, 0.022 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFG50N05L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFG50N05L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFG50N06 Fairchild Semiconductor 50 A, 60 V, 0.022 ohm, N-Channel Power MOSFET Original PDF
    RFG50N06 Harris Semiconductor 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFG50N06 Intersil 50A, 60V, 0.022 ?, N-Channel Power MOSFETs Original PDF
    RFG50N06LE Fairchild Semiconductor 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFET Original PDF
    RFG50N06LE Harris Semiconductor 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFG50N06LE Intersil 50A, 60V, 0.022 ?, Logic Level N-Channel Power MOSFETs Original PDF
    RFG50N06LE9A Intersil 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Original PDF
    RFG50NO5 Harris Semiconductor N-Channel Enhancement Mode Power Field-Effect Transistors (MegaFETs) Scan PDF

    RFG50N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fp50n06

    Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 175oC RF1S50N06LESM fp50n06 F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    RFP50N06

    Abstract: No abstract text available
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC RFP50N06

    F1S50N06

    Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM 175oC 98e-1 35E-4 83e-6) 42e-9 1e-30 F1S50N06 RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0

    fp50n06

    Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    fp50n06

    Abstract: 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet Title FG5 06L P50 6LE 1S5 06L M bt A, V, 22 m, gic vel anwer OSTs) utho October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    fairchild 9322

    Abstract: 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet Title FG5 06, P50 6, 1S5 06S bt A, V, 22 m, anwer OSTs utho eyrds ter- July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. fairchild 9322 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322

    F1S50N06

    Abstract: rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs File Number 3575.4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC F1S50N06 rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06

    rfp50n06

    Abstract: F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC rfp50n06 F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260

    TA09872

    Abstract: AN7254 RFG50N05L RFP50N05L RFP50N05L9A TB334 RFG50N
    Text: RFG50N05L, RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original     		PDF RFG50N05L, RFP50N05L TA09872 AN7254 RFG50N05L RFP50N05L RFP50N05L9A TB334 RFG50N

    50130A

    Abstract: RFP50N05L9A AN7254 RFG50N05L RFP50N05L TB334
    Text: RFG50N05L, RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original     		PDF RFG50N05L, RFP50N05L 50130A RFP50N05L9A AN7254 RFG50N05L RFP50N05L TB334

    RFP50N06

    Abstract: F1S50N06 AN7254 AN7260 RF1S50N06 RF1S50N06SM RF1S50N06SM9A RFG50N06 50A60V
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω Temperature Compensating PSPICE Model


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM O-247 175oC RF1S50N06SM RFP50N06 F1S50N06 AN7254 AN7260 RF1S50N06 RF1S50N06SM9A RFG50N06 50A60V

    fp50n05

    Abstract: 50n05
    Text: j h a r f r RFP50N05 RFG50N05 is May 1992 N -C hannel Enhancem ent-M ode Power Field-Effect Transistors (MegaFETs Features Package TO-220AB TOP VIEW • 50A, 50V • r DS(on) = 0 .0 2 2 fi DRAIN (FLANGE) • UIS SOA Rating Curve (Single Pulse) u • SOA is P o w e r-D issip atio n Lim ited


    OCR Scan     		PDF RFP50N05 RFG50N05 O-220AB O-247 RFG50N05 92CS-43040 BVD88 fp50n05 50n05

    RFG50N05

    Abstract: HRX-50 TI0H RFP50N05
    Text: £2 HARRIS 2-50 RFP50N05 RFG50N05 fciz N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs May 1992 P ackag e Features TO-220AB TOP VIEW • 50A, 50V • rDS(on) = 0.022ft uo DRAIN . (FLANGE) • UIS SOA Rating Curve (Single Pulse) • SOA is Power-Dissipation Limited


    OCR Scan     		PDF RFP50N05 RFG50N05 022ft RFG50N05 CAPGEP50N0CCF3 92CS-43040 an-7254 an-7260) ins240b HRX-50 TI0H

    50N06LE

    Abstract: No abstract text available
    Text: J W S S em icon du cto r RFG50N06LE, RFP50N06LE, RF1S50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. 022i2 50e-4 53e-6) 54e-3 21e-6) 50N06LE

    TA09872

    Abstract: RFP50N05L9A
    Text: interrii RFG50N05L, RFP50N05L D a ta S h e e t 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    OCR Scan     		PDF RFG50N05L, RFP50N05L AN7254 AN7260. TA09872 RFP50N05L9A

    TA49018

    Abstract: RFP50N06 50A60V f1s50n06
    Text: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. RF1S50N06SM AN7254 AN7260. TA49018 RFP50N06 50A60V f1s50n06

    Untitled

    Abstract: No abstract text available
    Text: RFG50N05L, RFP50N05L Semiconductor A p ril 1999 D ata S h eet 50A, 50V, 0.027 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan     		PDF RFG50N05L, RFP50N05L AN7254 AN7260.

    F1S50N06

    Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
    Text: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model


    OCR Scan     		PDF 1S50N06, RFG50N06, RFP50N06, RF1S50N06SM O-247 022S1 RF1S50N06, RF1S50N06SM F1S50N06 RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N

    fp50n06

    Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
    Text: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE


    OCR Scan     		PDF RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 022i2 RFG50N06LE, RF1S50N06LESM fp50n06 F50N06LE 50N06LE rfp50n06 T0-262AA

    RFPS0N06

    Abstract: TA49018 RFP50N06
    Text: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. AN7254 AN7260. RFPS0N06 TA49018 RFP50N06

    P50N05

    Abstract: AN7254 IN5240B RFG50N05
    Text: Power MegaFETs RFG50N05 File Number 2197 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 50 A, 50 V fDs(on) = 0.022 fi IN-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated • SOA is power-dissipation lim ited


    OCR Scan     		PDF RFG50N05 92CS-42658 RFG50N05 92CS-43040 AN7254 AN7260. IN5240B 2CS-42f2Z 92CS-42659 P50N05 IN5240B

    TA49018

    Abstract: RF1S50N06 F1S50N06 123E-3
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM TA49018. 0-022i2 07e-3 51e-7 05e-9 33e-8) TA49018 RF1S50N06 F1S50N06 123E-3

    TRS2-25-1

    Abstract: TA49018
    Text: RFG50N06 RFP50N06 fü HARRIS U U S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Package Features JEDEC T0-220AB TOP VIEW • 5 0 A ,60V • r DS(ON) = 0.022Q DRAIN (FLANGE) • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG50N06 RFP50N06 T0-220AB O-247 RFP50N06 98e-1 35e-3 83e-6) 1e-30 TRS2-25-1 TA49018

    FP50N06L

    Abstract: fp50n06 F50N06LE FG50N06L F50n06l RFPS0N06
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM interrii D ata S heet O cto b er 1999 File N u m b e r 4 0 7 2 .3 Features 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs • 5 0 A ,6 0 V These N-Channel enhancem ent mode power M O S F E Ts are manufactured using the latest manufacturing process


    OCR Scan     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. RF1S50N06LESM AN7254 AN7260. FP50N06L fp50n06 F50N06LE FG50N06L F50n06l RFPS0N06