Untitled
Abstract: No abstract text available
Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB
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RF3931D
96mmx1
33mmx0
DS110520
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
EAR99
RF3931
DS120306
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ATC800A
Abstract: RF3931 ER35
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB
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RF3931
EAR99
RF3931
cellul01L
GRM55ER72A475KA01L
100uF,
ECE-V1HA101UP
ATC800A
ER35
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amplifier 900mhz
Abstract: No abstract text available
Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS130501
amplifier 900mhz
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simple power supply schematic diagram
Abstract: RF3931S2 ATC800A3R3BT
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS120406
simple power supply schematic diagram
RF3931S2
ATC800A3R3BT
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RF3931
Abstract: 46dBm
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN
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RF3931
900MHz
RF3931
DS110317
46dBm
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mobile rf power amplifier transistor
Abstract: RF3931 GaN amplifier
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB
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RF3931
EAR99
RF3931
DS091021
mobile rf power amplifier transistor
GaN amplifier
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A1933
Abstract: amplifier 50 50W
Text: RF3931D Proposed 30W GAN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB
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RF3931D
96mmx1
33mmx0
RF3931D
DS110216
A1933
amplifier 50 50W
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RF3931
Abstract: Gan transistor mobile rf power amplifier transistor GaN BJT DSB070829 GaN amplifier rf gan amplifier
Text: RF3931 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Flanged Ceramic Features Peak Power=30W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation RF IN
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RF3931
RF3931
DSB070829
Gan transistor
mobile rf power amplifier transistor
GaN BJT
DSB070829
GaN amplifier
rf gan amplifier
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RF3931
Abstract: EAR99 ATC800A gan1 ECE-V1HA101UP EEU-FC2A331 RF35 GRM55ER72A475KA01L RF3931PCBA-410 11j26
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB
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RF3931
EAR99
RF3931
330uF,
EEU-FC2A331
130mA
DS100222
ATC800A
gan1
ECE-V1HA101UP
EEU-FC2A331
RF35
GRM55ER72A475KA01L
RF3931PCBA-410
11j26
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Untitled
Abstract: No abstract text available
Text: RF3931D RF3931D 30W GaN on SiC Power Amplifier Die Package: Die The RF3931D is a 48V, 30W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general
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RF3931D
RF3931D
DS130906
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
DS120406
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS120202
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ATC800B5R6
Abstract: ATC800B6R8 ATC800B120
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN
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RF3931
900MHz
RF3931
DS111026
ATC800B5R6
ATC800B6R8
ATC800B120
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GaN ADS
Abstract: ATC800B ATC800B120 ATC800B6R8 RF3931 EAR99 ECE-V1HA101UP ERJ8GEYJ100V
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN
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RF3931
900MHz
EAR99
RF3931
130mA
DS101115
GaN ADS
ATC800B
ATC800B120
ATC800B6R8
ECE-V1HA101UP
ERJ8GEYJ100V
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DS1304
Abstract: RFMD HEMT GaN SiC amplifier circuit diagram class E 30w
Text: RF3931D 30W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain = 14dB at 2GHz 48V Typical Packaged Performance Output Power: 50W at P3dB Drain Efficiency: 65% at P3dB
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RF3931D
RF3931D
DS130423
DS1304
RFMD HEMT GaN SiC
amplifier circuit diagram class E 30w
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46dBm
Abstract: No abstract text available
Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB
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RF3931D
96mmx1
33mmx0
RF3931D
DS110520
46dBm
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS121207
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GaN TRANSISTOR
Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt
Text: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor
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RF393x
simple40
GaN TRANSISTOR
RF3932
rf3931
RF3934
RF3933
transistor hemt
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Gan hemt transistor RFMD
Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
Text: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron
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RF393x
RF3933
RF3934
Gan hemt transistor RFMD
RF3932
HIGH POWER TRANSISTOR
Gan transistor
rf3931
RF3930
GaN amplifier
RF3933
RF3934
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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Gan hemt transistor RFMD
Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933
Text: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz
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GaN ADS
Abstract: GaN amplifier 120W transistor hemt RF393x
Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,
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RF393x
900MHz
220mA)
220mA,
RF3934
440mA)
900MHz)
GaN ADS
GaN amplifier 120W
transistor hemt
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VCO-102
Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high
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