ATC800B5R6 Search Results

ATC800B5R6 Price and Stock

Filter by Manufacturer


Kyocera AVX Components 800B5R6BT500XT Multilayer Ceramic Capacitors MLCC - SMD/SMT 500volts 5.6pF NP0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	800B5R6BT500XT	Reel	1,500		500	1 - 10 - 100 - 1000 $2.21 10000 $1.76	Buy Now
Kyocera AVX Components 800B5R6CT500XT1K Multilayer Ceramic Capacitors MLCC - SMD/SMT 5.6PF 500V .25PF 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	800B5R6CT500XT1K	Reel			1,000	1 - 10 - 100 - 1000 $1.63 10000 $1.25	Buy Now
Kyocera AVX Components 800B5R6BT500T Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 5.6pF Tol 0.1pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	800B5R6BT500T	Reel			500	1 - 10 - 100 - 1000 $2.4 10000 $2.4	Buy Now
Kyocera AVX Components 800B5R6BT500XTV Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 5.6pF Tol 0.1pF Las Mkg Vertical
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	800B5R6BT500XTV	Reel			500	1 - 10 - 100 - 1000 $2.37 10000 $1.8	Buy Now
Kyocera AVX Components 800B5R6BW500XTV Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 5.6pF Tol 0.1pF Las Mkg Vertical
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	800B5R6BW500XTV	Reel			500	1 - 10 - 100 - 1000 $2.26 10000 $2.22	Buy Now

ATC800B5R6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Z25 transistor Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1 Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1	PDF
Untitled Abstract: No abstract text available Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz	Original	RF3931 900MHz EAR99 RF3931 DS120306	PDF
Untitled Abstract: No abstract text available Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package	Original	NPT2020 NPT2020 NDS-037	PDF
amplifier 900mhz Abstract: No abstract text available Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Gain = 15dB at 2GHz  48V Operation Typical Performance at 900MHz	Original	RF3931 900MHz RF3931 DS130501 amplifier 900mhz	PDF
simple power supply schematic diagram Abstract: RF3931S2 ATC800A3R3BT Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz	Original	RF3931 900MHz RF3931 DS120406 simple power supply schematic diagram RF3931S2 ATC800A3R3BT	PDF
RF3931 Abstract: 46dBm Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN	Original	RF3931 900MHz RF3931 DS110317 46dBm	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 AFT05MP075NR1	PDF
Untitled Abstract: No abstract text available Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz	Original	RF3931 900MHz DS120406	PDF
Untitled Abstract: No abstract text available Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package	Original	NPT2020 NPT2020 NDS-037	PDF
Untitled Abstract: No abstract text available Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz	Original	RF3931 900MHz RF3931 DS120202	PDF
ATC800B5R6 Abstract: ATC800B6R8 ATC800B120 Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN	Original	RF3931 900MHz RF3931 DS111026 ATC800B5R6 ATC800B6R8 ATC800B120	PDF
Untitled Abstract: No abstract text available Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package	Original	NPT2020 NPT2020 NDS-037	PDF
Untitled Abstract: No abstract text available Text: RF3931 RF3931 30W GaN Wideband Power Amplifier The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier	Original	RF3931 RF3931 DS130905	PDF
GaN ADS Abstract: ATC800B ATC800B120 ATC800B6R8 RF3931 EAR99 ECE-V1HA101UP ERJ8GEYJ100V Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN	Original	RF3931 900MHz EAR99 RF3931 130mA DS101115 GaN ADS ATC800B ATC800B120 ATC800B6R8 ECE-V1HA101UP ERJ8GEYJ100V	PDF

Untitled Abstract: No abstract text available Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz	Original	RF3931 900MHz RF3931 DS121207	PDF