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    RF1K4915496 Search Results

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    RF1K4915496 Price and Stock

    Rochester Electronics LLC RF1K4915496

    MOSFET 2N-CH 60V 2A 8SOIC
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    DigiKey RF1K4915496 Bulk 398
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    Intersil Corporation RF1K4915496

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RF1K4915496 2,155 3
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    Quest Components RF1K4915496 1,724
    • 1 $2.25
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    • 1000 $0.585
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    Fairchild Semiconductor Corporation RF1K4915496

    MOSFET Transistor, Matched Pair, N-Channel, SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RF1K4915496 1,960
    • 1 $1.75
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    Rochester Electronics RF1K4915496 1,731 1
    • 1 $0.7621
    • 10 $0.7621
    • 100 $0.7164
    • 1000 $0.6478
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    RF1K4915496 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1K4915496 Fairchild Semiconductor 2 A, 60 V, 0.130 ohm, Dual N-Channel, LittleFET Power MOSFET Original PDF
    RF1K4915496 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1K4915496 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
    Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49154 AN7254 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference

    AN7254

    Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
    Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET 4143.3 Features • 2A, 60V Title This Dual N-Channel power MOSFET is manufactured using F1K the latest manufacturing process technology. This process, 154 which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49154 TA49154. AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334

    AN7254

    Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334 an-7254
    Text: RF1K49154 Data Sheet January 2002 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49154 AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334 an-7254

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    mosfet motor dc 48v

    Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496
    Text: RF1K49154 S E M I C O N D U C T O R 2A, 60V, ESD Rated, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2A, 60V The RF1K49154 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    Original     		PDF RF1K49154 RF1K49154 52e-2 27e-4) 55e-3 03e-3 64e-6) 20e-3 67e-6) mosfet motor dc 48v AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K4915496

    2A60V

    Abstract: No abstract text available
    Text: HARFU S E M I C O N 0 ,¿5 - RF1K49154 .:MZi^6iW^-ESb Rated, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 19^7 Features Description • 2A.60V The RF1K49154 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    OCR Scan     		PDF RF1K49154 RF1K49154 130C2 MS-012AA RF1K4915496. TA49154. MS-012AA 2A60V

    Untitled

    Abstract: No abstract text available
    Text: RF1K49154 Semiconductor April 1999 Data Sheet 2A, 60 V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Num ber Features • 2 A ,6 0 V This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    OCR Scan     		PDF RF1K49154 RF1K49154 55e-3 03e-3 64e-6) 20e-3 67e-6)

    Untitled

    Abstract: No abstract text available
    Text: intervia RF1K49154 Data S h eet O c to b e r 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET F ile N u m b e r 4143.3 Features • 2A , 60V T h is D ual N -C hannel p o w e r M O S F E T is m a nufactured using th e latest m a nu facturin g proce ss technology. T h is process,


    OCR Scan     		PDF RF1K49154 TA49154. RF1K49154 AN7254 AN7260.