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    HUF75321S3ST Search Results

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    HUF75321S3ST Price and Stock

    Rochester Electronics LLC HUF75321S3ST

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75321S3ST Bulk 888
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.34
    • 10000 $0.34
    Buy Now

    Fairchild Semiconductor Corporation HUF75321S3ST

    HUF75321 - N-Channel ULTRAFET POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75321S3ST 1,303 1
    • 1 $0.325
    • 10 $0.325
    • 100 $0.3055
    • 1000 $0.2763
    • 10000 $0.2763
    Buy Now

    HUF75321S3ST Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75321S3ST Fairchild Semiconductor 35 A, 55 V, 0.034 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75321S3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-263, 3-Pin Original PDF
    HUF75321S3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF

    HUF75321S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    75321p

    Abstract: HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 relay 6v 200 ohm
    Text: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF75321P3, HUF75321S3S 75321p HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 relay 6v 200 ohm PDF

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original
    0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A PDF

    75321p

    Abstract: DIODE 709 1334 AN9321 HUF75321 HUF75321P3 HUF75321S3 HUF75321S3S HUF75321S3ST TA75321
    Text: HUF75321P3, HUF75321S3, HUF75321S3S S E M I C O N D U C T O R 31A, 55V, 0.032 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 31A, 55V The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original
    HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 1-800-4-HARRIS 75321p DIODE 709 1334 AN9321 HUF75321P3 HUF75321S3 HUF75321S3S HUF75321S3ST TA75321 PDF

    75321p

    Abstract: HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334
    Text: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF75321P3, HUF75321S3S 75321p HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 PDF

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original
    RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C PDF

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original
    0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF75321P3, HUF75321S3S PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    75321p

    Abstract: AN9321 AN9322 HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 Saber Relay
    Text: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF75321P3, HUF75321S3S 75321p AN9321 AN9322 HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 Saber Relay PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor Novem ber 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan
    HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 O-263AB O-263AB PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3S interrii D a ta S h e e t 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF75321P3, HUF75321S3S AN7260. PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3S Semiconductor Data Sheet June 1999 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF75321P3, HUF75321S3S HUF75321P 10e-3 72e-2 67e-2 30e-1 49e-1 PDF

    75321P

    Abstract: 75321S
    Text: HUF75321P3, HUF75321S3S interrii Data S heet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs um fy' These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF75321P3, HUF75321S3S HUF7S321P3, HUF75321S3S AN7254 AN7260. 75321P 75321S PDF

    75321p

    Abstract: 75321S HUF75321 410E1
    Text: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor November 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan
    HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 O-263AB 330mm 100mm 75321p 75321S 410E1 PDF