RF TRANSISTOR S-PARAMETER VHF Search Results

RF TRANSISTOR S-PARAMETER VHF Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

RF TRANSISTOR S-PARAMETER VHF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BLY91 Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _	OCR Scan	711062b 00b3bn BLY91C/01 lthasaSOT122F -SOT122F MB8012 BLY91 BH 1117 F Silicon Epitaxial Planar Transistor philips	PDF
1117 S Transistor Abstract: sot122f Text: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,	OCR Scan	BLY91C/01 OT122F OT122F_ 1117 S Transistor sot122f	PDF
34D SERIES CAPACITOR Abstract: BLY92 BLY92C Philips MBB .J275 Text: 711065b Philips Semiconductors PHILIPS INT ERN AT ION AL D0 b 3 b 3 7 5 7 fl P H IN Product specification b5E » VHF power transistor BLY92C/01 DESCRIPTION PIN CONFIGURATION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,	OCR Scan	D0b3b37 BLY92C/01 OT122F1A OT122F M34326 11J1U 34D SERIES CAPACITOR BLY92 BLY92C Philips MBB .J275	PDF
BLW10 Abstract: BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf Text: Philips Semiconductors M b b S B 1^ ! DTT • AP X Productspecification VHF power tr a n s is to r _ BLW40 AMER PHILIPS/DISCRETE b^E » FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures	OCR Scan	BLW40 OT120 -SOT120 MBA451 BLW10 BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf	PDF
Untitled Abstract: No abstract text available Text: bb53T31 D05T740 OTT Philips Semiconductors APX ^roduc^pecificatlon VHF power transistor BLY92C/01 " " " " — • N A f1 E R p H IL IP S /]> IS C R E T E p PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,	OCR Scan	bb53T31 D05T740 BLY92C/01 -SOT122F Lb53T31 00ET747	PDF
mcd206 Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W Text: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead	OCR Scan	BLV13 OT123 PINNING-SOT123 MCD210 MBA451 MCD211 mcd206 philips Trimmer 60 pf BLV13 MCD211 C106W	PDF
MCD206 Abstract: BLV13 PHHI philips Trimmer 60 pf sot123 ceramic capacitor 47 pf MC-02C Text: 0020125 Philips Sem iconductors 75 B APX Product specification VHF power transistor ^ A U E P H ILIP S /D IS C R E TE b^E • Gold metallization ensures excellent reliability. MODE OF OPERATION c.w. class-B f MHz 175 111 O > Emitter-ballasting resistors for an	OCR Scan	BLV13 OT123 PINNING-SOT123 MBA45t MCD21 MCD206 BLV13 PHHI philips Trimmer 60 pf sot123 ceramic capacitor 47 pf MC-02C	PDF
transistor d 1991 ar Abstract: No abstract text available Text: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,	OCR Scan	BLY91C/01 T122F1 OT122F bb53131 transistor d 1991 ar	PDF
A 673 C2 transistor Abstract: RF POWER TRANSISTOR NPN vhf BLW30 Text: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.	OCR Scan	711002b BLW30 OT120 -SOT12Q MBA451 RA377 A 673 C2 transistor RF POWER TRANSISTOR NPN vhf BLW30	PDF
transistor D 1557 Abstract: RD15HVF1 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W 3.2+/-0.4 1.3+/-0.4 3.6+/-0.2 2 9+/-0.4 1.2+/-0.4 0.8+0.10/-0.15 APPLICATION 1 2 3 For output stage of high power amplifiers in VHF/UHF	Original	RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz transistor D 1557 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391	PDF
RD70HVF Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers	Original	RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF RD70HV vhf power transistor 50W MOSFET 2095 transistor 50w rf power transistor 520-MHz	PDF
RF POWER TRANSISTOR NPN vhf Abstract: BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf Text: P hilips Sem iconductors J’b53T31 0 0 5 Iì 7 4 Q GTT • A P X ^ductspecificatlon BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE bTE D PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,	OCR Scan	OT122F PINNING-SOT122F RF POWER TRANSISTOR NPN vhf BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf	PDF
Untitled Abstract: No abstract text available Text: B iM E D N P U C T O R « MPSH11 MMBTH11 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 pA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving	OCR Scan	MPSH11 MMBTH11 MPSH11	PDF
transistor tt 2222 Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92 Text: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,	OCR Scan	BLY92C/01 OT122F PINNING-SOT122F_ MBB012 transistor tt 2222 C7f TRANSISTOR BLY92C BLY92C/01 BLY92	PDF

Untitled Abstract: No abstract text available Text: Philips Sem iconductors b b 5 3 ^ 3 1 DDE6TES 756 APX Product specification BLV13 VHF power transistor M AUER PHILIPS/DISCRETE QUICK REFERENCE DATA RF performance at T ^ = 25 °C in a common emitter test circuit. FEATURES • Gold metallization ensures excellent reliability.	OCR Scan	BLV13 bbS3131 MCD211	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF241 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures excellent reliability.	OCR Scan	BLF241 7Z21747	PDF
L2-7 TURN Abstract: BLW30 URA374 MAA331 Text: Philips Semiconductors ^ {□ 5 3 *1 3 1 □ □ E 'iS 'ìS TÛ3 M A P X oductspecification VHF power transistor BLW30 N AMER PHILIPS/DISCRETE fciTE » QUICK REFERENCE DATA RF performance at = 25 °C in a common emitter test circuit. FEATURES MODE OF OPERATION	OCR Scan	BLW30 MBA451 L2-7 TURN BLW30 URA374 MAA331	PDF
BLV33 Abstract: OC-50 2x3 transistor Text: Philips Semiconductors Product specification VHF linear power transistor BLV33 FEATURES PINNING -S O T 1 47 • Diffused emitter ballasting resistors for an optimum temperature profile • Gold sandwich metallization ensures excellent reliability. APPLICATIONS	OCR Scan	BLV33 OT147 71106Eb OT147. 711002b BLV33 OC-50 2x3 transistor	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. D im ensions in mm FEATURES •	OCR Scan	2SC1324 2SC1324 770MHz	PDF
2SC1324 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. Dim ensions in mm FEATURES •	OCR Scan	2SC1324 2SC1324 770MHz	PDF
uc3807 Abstract: BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322 Text: Philips Semiconductors Product specification HF/VHF power MOS transistor BLF221 SbE D PHILIPS INTERNATIONAL 7110ö5b 004374D 147 « P H I N T-3 FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability	OCR Scan	BLF221 O-39/3) 004374D MSB009- MB8072' mu711Dfl2b MC9804 uc3807 BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322	PDF
plji Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777 Text: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control	OCR Scan	BLF241 711Gfl5ti 00M37bfc. MSB009' MBB072-S BLF24Â 0Q43774 plji transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777	PDF
2sc2053 Abstract: 2Sc2053 equivalent Text: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES	OCR Scan	2SC2053 2SC2053 175MHz 2Sc2053 equivalent	PDF
transistor tt 2222 Abstract: transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341 Text: Philips Semiconductors 1^53^31 4G5 IAPX HF/VHF power MOS transistor Product specification BLF241 N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures	OCR Scan	bbS3T31 BLF241 MBB072' MSB009-1 7Z21747 transistor tt 2222 transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341	PDF

RF TRANSISTOR S-PARAMETER VHF Search Results

RF TRANSISTOR S-PARAMETER VHF Result Highlights (5)

RF TRANSISTOR S-PARAMETER VHF Datasheets Context Search

BLY91

1117 S Transistor

34D SERIES CAPACITOR

BLW10

Untitled

mcd206

MCD206

transistor d 1991 ar

A 673 C2 transistor

transistor D 1557

RD70HVF

RF POWER TRANSISTOR NPN vhf

Untitled

transistor tt 2222

Untitled

Untitled

L2-7 TURN

BLV33

Untitled

2SC1324

uc3807

plji

2sc2053

transistor tt 2222