Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MBB012 Search Results

    SF Impression Pixel

    MBB012 Price and Stock

    Schurter Electronic Components 5500.2069 (ALTERNATE: FMBB-0124-1210)

    ACLineFilter 1-Ph 2-St BrdBndAttn 12A 250VAC 2x5L 24-2Case Screw Ind | Schurter 5500.2069
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 5500.2069 (ALTERNATE: FMBB-0124-1210) Bulk 31 Weeks 2
    • 1 -
    • 10 $183.31
    • 100 $171.36
    • 1000 $161.39
    • 10000 $161.39
    		Get Quote

    MBB012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLY89C

    Abstract: MSB056
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLY89C SC08a BLY89C MSB056

    c 129 transistor

    Abstract: BLU86 SMD ic catalogue
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile


    Original     		PDF BLU86 OT223 c 129 transistor BLU86 SMD ic catalogue

    MRA359

    Abstract: MDA536 BLV103 MRA364
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for


    Original     		PDF BLV103 MRA359 MDA536 BLV103 MRA364

    SOT123 Package

    Abstract: 4312 020 36640 transistor Common Base configuration Q 371 Transistor SOT123 BLV20 BR 8 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV20 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLV20 SC08a SOT123 Package 4312 020 36640 transistor Common Base configuration Q 371 Transistor SOT123 BLV20 BR 8 TRANSISTOR

    BLV20

    Abstract: 4312 020 36640
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV20 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f.


    Original     		PDF BLV20 BLV20 4312 020 36640

    MGP420

    Abstract: BFQ42 transistor M 839 mgp41 MGP424 BLW29 MSB056
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW29 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters


    Original     		PDF BLW29 BFQ42 MGP420 transistor M 839 mgp41 MGP424 BLW29 MSB056

    mrc102

    Abstract: MRC100 mrc101 MRC103 BLV194
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures


    Original     		PDF BLV194 OT171 mrc102 MRC100 mrc101 MRC103 BLV194

    MRB11040W

    Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
    Text: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an


    OCR Scan     		PDF FO-67 MRB11040W 0G4b32M T-33-13 711002b 0D4b32fl MRB11040W QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity

    bf241

    Abstract: BF240 BF241 TO92 bF240 transistor bf241_ BF241 Philips
    Text: BF240 BF241 PH IL IP S I N T E R N A T I O N A L 5bE D • 711DäEb G D 4 2 m 4 MOT ■ P H I N T-J t - HF SILICON PLANAR EPITAXIAL TRANSISTORS // NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in A M /FM receivers. QUICK REFERENCE DATA


    OCR Scan     		PDF BF240 BF241 GD42m4 bf241 BF241 TO92 bF240 transistor bf241_ BF241 Philips

    Untitled

    Abstract: No abstract text available
    Text: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.


    OCR Scan     		PDF BCW31 BCW32 BCW33 bhS3T31 0Q245b7

    Untitled

    Abstract: No abstract text available
    Text: bbSB^Bl QQ24453 MM•=! H A P X N AUER PHILIPS/DISCRETE BC846 BC847 BC848 b7E D J V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC846 Collector-emitter voltage V gE = 0 BC847 BC848


    OCR Scan     		PDF QQ24453 BC846 BC847 BC848 OT-23 QQ244S7

    Untitled

    Abstract: No abstract text available
    Text: PMBT5550 _ / v _ SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT-23 package. Q UICK REFERENCE D A T A Collector-base voltage open emitter


    OCR Scan     		PDF PMBT5550 OT-23 OT-23.

    Untitled

    Abstract: No abstract text available
    Text: • b b S a i a i QQS4h?3 QTT » A P X N AMER PHILIPS/DISCRETE B F720 B F722 b?E » SILICON EPITAXIAL TRANSISTORS NPN transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers, and general purpose high voltage circuits.


    OCR Scan     		PDF BF721 BF723 BF720 BF722 bbS3T31 0024b75

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE D • QOEflflM? M3fl P h ilip s S e m icon d u ctors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FE A T U R E S • SM D encapsulation • Emitter-ballasting resistors for optimum temperature profile


    OCR Scan     		PDF BLU56 bbS3T31 002AA53 MCB030 MC8027

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.


    OCR Scan     		PDF Q0EMS73 bbS3031 003457b

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E D • bb53T31 QDBflOB? 3^B PH2222 PH2222A IAPX SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO-92 envelopes, primarily intended for switching and linear applications. QUICK REFERENCE DATA PH2222 PH2222A v CBO


    OCR Scan     		PDF bb53T31 PH2222 PH2222A 1N916.

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE J> bbS3^31 DOSfiOSfl Tbb IAPX PN3439 P N 3440 l SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors in a TO-92 envelope and intended for use in telephony and professional communication equipment.


    OCR Scan     		PDF PN3439 PN5415/5416. PN3440

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


    OCR Scan     		PDF BLT81 OT223

    jc33725

    Abstract: JC337 JC337-25 JC337A jc33740 TO600 JC327 JC327A JC328 JC337-16
    Text: • JC337 JC337A JC338 bbSBTai □□27c1b2 73fi HIAPX N AMER PHILIPS/DISCRETE b'ÌE ]> SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO-92 variant envelopes, primarily intended for use in driver and output stages of audio amplifiers. The JC337, JC337A, JC338 are complementary to the JC327, JC327A and JC328 respectively.


    OCR Scan     		PDF JC337 JC337A JC338 JC337, JC337A, JC338 JC327, JC327A JC328 JC337 jc33725 JC337-25 JC337A jc33740 TO600 JC327 JC337-16

    bs33

    Abstract: BDV67CF ZH09 BDV67AF BDV67BF BDV67DF NPN POWER DARLINGTON TRANSISTORS
    Text: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN N P N epitaxial ba se Darlington transistors for au dio output stages


    OCR Scan     		PDF BDV67AF/67BF/67CF/67DF BDV66AF/66BF/66CF/66DF. OT199 BDV67AF BDV67BF BDV67CF BDV67DF bs33 ZH09 NPN POWER DARLINGTON TRANSISTORS

    IC 651

    Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
    Text: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a


    OCR Scan     		PDF BDS643/645/647/649/651 OT223, BDS644/646/648/650/652. -SOT223 BDS643 BDS645 BDS647 BDS649 BDS651 IC 651

    BSR13

    Abstract: BSR14 CBO10
    Text: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA


    OCR Scan     		PDF 711Qaeb BSR13 BSR14 BSR13 BSR14 7Z82486 7Z82484 CBO10

    transistor B42

    Abstract: No abstract text available
    Text: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits


    OCR Scan     		PDF RZB06050W 711DfiEti 711Dfl2b transistor B42

    pj 929 diode picture

    Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
    Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits


    OCR Scan     		PDF BA481 SAA7197 SAA7199B TDA4680 TDA4685 pA733C LFC02 MEH469 pj 929 diode picture bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor