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    TRANSISTOR WM 9

    Abstract: BF749 UHF transistor GHz transistor wm
    Text: Philjps_Semicondtgtore B l 711065b QObflbSfl 55^ HIN ^^Produc^pecification NPN 5 GHz wideband transistor FEA TU R ES BF749 e P IN N IN G PIN • High power gain • Low noise figure • Gold m etallization ensures excellent reliability. D E S C R IP T IO N


    OCR Scan     		PDF BF749 BF749 OT143 MSB035 OT143R. TRANSISTOR WM 9 UHF transistor GHz transistor wm

    2n4391

    Abstract: 2N4393 2N4392 17Z6 IEC 439-3
    Text: 711065b 00bô07M 5 0b • P H I N 2N4391 to 4393 N-CHANNEL FETS S ilico n sym m etrical n-channel d e p le tion typ e ju n c tio n fie ld -e ffe c t transistors in TO -18 m etal envelopes w ith th e gate connected to th e case. T he transistors are intended fo r lo w pow er, ch o p pe r o r sw itching,


    OCR Scan     		PDF 711005b 2N4391 711002b 2N4392 2N4393 2N4393 17Z6 IEC 439-3

    BFR84

    Abstract: bfr84 is bfr84 as mosfet depletion transistor bfr84
    Text: 711065b DDb7b37 137 IPHIN BFR84 SILICON N-CHANNEL DUAL GATE MOS-FET D e p le tio n ty p e fie ld -e ffe ct tra n sisto r in a m etal T O -7 2 envelope w ith source and substrate connected to th e case, intended fo r a w id e range o f v.h.f. ap plications, such as v.h.f. te levisio n tuners, f.m . tuners,


    OCR Scan     		PDF 711065b DDb7b37 BFR84 711002b V62-s BFR84 bfr84 is bfr84 as mosfet depletion transistor bfr84

    MPS3704

    Abstract: MPS3706 MPS3705
    Text: MPS3704 MPS3705 MPS3706 philips international 5bE D 711065b 0042406 4Ô4 • SILICON PLANAR EPITAXIAL TRANSISTORS PHIN T -Z 7 -Z / NPN silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended for use in amplifier applications.


    OCR Scan     		PDF MPS3704 MPS3705 MPS3706 711065b MPS3704 100mA MPS3706

    BUK445-600B

    Abstract: 100-P
    Text: PHILIPS INTERNATIONAL b5E » B 711065b DDbMQll 7b3 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic lull-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK445-600B -SOT186 BUK445-600B 100-P

    34D SERIES CAPACITOR

    Abstract: BLY92 BLY92C Philips MBB .J275
    Text: 711065b Philips Semiconductors PHILIPS INT ERN AT ION AL D0 b 3 b 3 7 5 7 fl P H IN Product specification b5E » VHF power transistor BLY92C/01 DESCRIPTION PIN CONFIGURATION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF D0b3b37 BLY92C/01 OT122F1A OT122F M34326 11J1U 34D SERIES CAPACITOR BLY92 BLY92C Philips MBB .J275

    IN916

    Abstract: TDA8702 TDA8708A TDA8709A TDA8709AT
    Text: IN TE G R A TE D C IR C U ITS h SlnllET TDA8709A Video analog input interface Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS 711065b 0073fe3fl 302 This Material C o p yrighted By Its Respect i v e Ma nu f a c t u r e r


    OCR Scan     		PDF TDA8709A 711065b 0073fe3fl TDA8709A 7110fl2b D073bbl IN916 TDA8702 TDA8708A TDA8709AT

    BUK543

    Abstract: BUK543-100A BUK543-100B
    Text: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor


    OCR Scan     		PDF 711065b BUK543-100A/B -SOT186 BUK543 BUK543-100A BUK543-100B

    BUK453-60A

    Abstract: BUK453-60B T0220AB
    Text: PHILIPS INTERNATIONAL bSE D B 711065b □□bL4D3fc. 033 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711065b BUK453-60A/B T0220AB BUK453-60A BUK453-60B

    sot172

    Abstract: No abstract text available
    Text: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures


    OCR Scan     		PDF BLV99/SL OT172 -SOT172D MDB012 7Z94685 sot172

    SMD IC 2025

    Abstract: Y 09 PZTA92 PZTA93 bs7 smd
    Text: 711065b ODbl'm 71D IPHIN P Z T A 92 PZTA 93 SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icro m in ia tu re S M D envelope S O T -2 2 3 . T h e y are p rim a rily intended fo r use in te lep h o n y and professional co m m un ication eq uip m ent.


    OCR Scan     		PDF 711065b PZTA92 PZTA93 OT-223) PZTA92 MECHANICAL00mA; SMD IC 2025 Y 09 PZTA93 bs7 smd

    silicon planar epitaxial transistors

    Abstract: No abstract text available
    Text: BCY70 to 72 PHILIPS IN TERNATIONA L SbE D 711 002 b DOMElOti bTb BIP HIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended fo r general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A TA


    OCR Scan     		PDF BCY70 BCY71 T-27-09 711002b silicon planar epitaxial transistors

    BUK10B-50US

    Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
    Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic


    OCR Scan     		PDF 7110fl2b BUK106-50L7S BUK106-50LP/SP BUK106-50L/S BUK106-50I7S BUK10B-50US philips ldh d6506 BUK106-50L BUK106-50S buk106

    TDA1534

    Abstract: SAMPLE HOLD AMPLIFIER single supply TDA1535 sample and hold TDA1535B
    Text: Philips Semiconductors Integrated Circuits Preliminary specification _ TDA1535B High-speed single sampie-and-hold amplifier QUICK REFERENCE DATA GENERAL DESCRIPTION The TDA1535B is a high-speed sampte-and-hold amplifier with a total harmonic distortion of 0.001%,


    OCR Scan     		PDF TDA1535B TDA1535B -17V-100 TDA1534 TDA1534. 711002b c12Ea TDA1534 SAMPLE HOLD AMPLIFIER single supply TDA1535 sample and hold

    MCL T1-1

    Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
    Text: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM


    OCR Scan     		PDF 711002b G0114SS PCF84C121 PCF84C121. PCF84C121 PCF84C12. 7110fl2b MCL T1-1 MAB8048 PCF84C12 PCF84C121P PCF84C121T S020

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


    OCR Scan     		PDF 33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips

    SAB 8048 P 220 SM 590

    Abstract: MAA 723 MADE S18B micro controller based cfl Inverter soc 512a d74c 4X16 lcd 1514c 8 lcd digit counter s1bc
    Text: PCF84C633A J V_ SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVERS, DERIVATIVE PORT, TIMER/CAPTURE AND TIMER/COUNTER DESCRIPTION IMPORTANT The PCF84C633A is a microcontroller with 20 on-chip liquid crystal display LCD outputs. These can be configured for


    OCR Scan     		PDF PCF84C633A PCF84C633A PCF84CXX 16-bit 7Z24606 711002b 007412b SAB 8048 P 220 SM 590 MAA 723 MADE S18B micro controller based cfl Inverter soc 512a d74c 4X16 lcd 1514c 8 lcd digit counter s1bc

    BD235 PHILIPS

    Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
    Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its


    OCR Scan     		PDF BD233 BD235 BD237 711002b aSOT-32 BD234, BD236 BD238. BD233 BD235 BD235 PHILIPS bd233 T bd237 philips BD234 BD237-10 BD237 BD238

    3843 application note

    Abstract: HP2 800 243 PCF84C85P MAB8400 3M 4611 dpi 510 MAB8048 PCF84C85 PCF84C85T 8c032
    Text: DEVELOPMENT DATA PCF84C85 This data sheet contains advance information and specifications are subject to change without notice. PHILIPS INTERNATIONAL - 34E D H 7110aab 0011415 4 B “T ^ - W - O S SINGLE-CHIP 8-BIT MICROCONTROLLER WITH 32 I/O LINES D ESCRIPTIO N


    OCR Scan     		PDF 7110aab 001141S PCF84C85 MAB8048 84CXXX PCF84C85 12tXTAL 3843 application note HP2 800 243 PCF84C85P MAB8400 3M 4611 dpi 510 PCF84C85T 8c032

    BLY91

    Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
    Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _


    OCR Scan     		PDF 711062b 00b3bn BLY91C/01 lthasaSOT122F -SOT122F MB8012 BLY91 BH 1117 F Silicon Epitaxial Planar Transistor philips

    circuit diagram of rc transmitter and receiver

    Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
    Text: P H IL IP S I N T E R N A T I O N A L bSE D B3 7 1 1 0 B S b OOblBlfl 10Ô « P H I N Philip* Semiconductor* Data Communication* Product* Product «pacification CMOS Dual universal serial communications controller CDUSCC erfiorceo SC68C562 PIN CONFIGURATIONS


    OCR Scan     		PDF SC68C562 SC68C562 circuit diagram of rc transmitter and receiver philips e3 Philips KS capacitors SC68C562C1N SCN68562

    3WD3

    Abstract: 16KX8 16kx8 static ram ttl 80C51 80C52 87C524 P80C528FBP P83C524EBP
    Text: SbE D PHILIPS IN TERNATIONAL • 711GfiEb CmafiflTS TTS H P H I N Product specification Philips Semiconductors Microcontroller Products 83C524/87C524 CMOS single-chip 8-bit microcontroller PIN CONFIGURATIONS DESCRIPTION The 8XC524 single-chip 8-bit microcontroller


    OCR Scan     		PDF 83C524/87C524 8XC524 80C51 80C51. 83C524 87C524) 16-bit 48tcLCL 3WD3 16KX8 16kx8 static ram ttl 80C52 87C524 P80C528FBP P83C524EBP

    RZ3135B50W

    Abstract: No abstract text available
    Text: - 3 3 ^ 3 RZ3135B50W PHILIPS INTERN A T I O N A L SbE D • 711DaEt. OOHbLOS 124 * P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar e p ita xia l m icrow ave p o w e r tran sisto r, intended fo r use in a common-base class-C broadband pulse p ow er a m p lifie r w ith a freq u e n cy range o f 3.1 to 3.5 GHz.


    OCR Scan     		PDF RZ3135B50W 711Dflat T-33-13 711002b 004bb0b RZ3135B50W

    transistor D042

    Abstract: b0338 b0332 transistor 338 D0420 b0334 bd33 transistor c 3331 BD333 BD335
    Text: BD332; 334 BD336; 338 PHILIPS INTERNA TIO NA L SbE ]> 7110 02b 00W2a= t, l f l 4 * P H I N SILICON DARLINGTON POWER TRANSISTORS T -tt-S Î P-N-P e p itax ial base transistors in m o n o lith ic D arlin gton c irc u it fo r a u d io o u tp u t stages and general


    OCR Scan     		PDF BD332; BD336; 711002b 0042a= OT-82 BD331, BD333, BD335 BD337. BD332 transistor D042 b0338 b0332 transistor 338 D0420 b0334 bd33 transistor c 3331 BD333