RF MOSFET CLASS AB Search Results

RF MOSFET CLASS AB Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

RF MOSFET CLASS AB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
5r1 mosfet transistor Abstract: mosfet j142 J132 MOSFET 741 datasheet motorola mosfet J137 MOSFET J132 transistor zo 607 ZO 607 MA MRF6522-5R1 SMD transistor 23 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–5/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A and Class AB common source, linear power	Original	MRF6522 MRF6522-5R1 5r1 mosfet transistor mosfet j142 J132 MOSFET 741 datasheet motorola mosfet J137 MOSFET J132 transistor zo 607 ZO 607 MA MRF6522-5R1 SMD transistor 23	PDF
mosfet 4702 Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942 Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts	Original	IXZ210N50L IXZ2210N50L 175MHz IXZ210N50L 175MHz mosfet 4702 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942	PDF
rf power mosfet Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings	Original	IXZ215N12L 175MHz rf power mosfet mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet	PDF
"RF MOSFETs" Abstract: "RF MOSFET" 731 MOSFET IXZ308N120 mosfet 440 mhz MOSFET RF POWER Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast	Original	IXZ308N120 175MHz IXZ308N120 dsIXZ308N12 "RF MOSFETs" "RF MOSFET" 731 MOSFET mosfet 440 mhz MOSFET RF POWER	PDF
"RF MOSFET" 300W Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf Text: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating	Original	IXZ12210N50L 175MHz 175MHz IXZ1210N50L dsIXZ12210N50L "RF MOSFET" 300W transistor tl 187 "RF MOSFETs" RF POWER MOSFET 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf	PDF
Untitled Abstract: No abstract text available Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast	Original	IXZ308N120 175MHz IXZ308N120 dsIXZ308N12	PDF
mosfet 4702 Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364 Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating	Original	IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L mosfet 4702 IXZ2210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364	PDF
IXZ2210N50L Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating	Original	IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L IXZ2210N50L "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF	PDF
IXZR18N50 Abstract: ixz318n50a Text: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Low Capacitance Qg and Rg Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for Class Switching C, D, & E Applications	Original	IXZR18N50 IXZR18N50A/B IXZ318N50A/B dsIXZR18N50 IXZR18N50 ixz318n50a	PDF
1 RF s 640 a 931 Abstract: "RF MOSFETs" transistor tl 187 IXYS IXZ316N60 mosfet 50V Text: IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Low Capacitance Qg and Rg Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for Class Switching C, D, & E Applications	Original	IXZR16N60 IXZR16N60A/B IXZ316N60 dsIXZR16N60 1 RF s 640 a 931 "RF MOSFETs" transistor tl 187 IXYS mosfet 50V	PDF
IXZ316N60 Abstract: mosfet 50V Text: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V	Original	IXZ316N60 IXZ316N60 dsIXZ316N60 mosfet 50V	PDF
ixzr08n120a Abstract: No abstract text available Text: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on	Original	IXZR08N120 IXZR08N120A/B dsIXZR08N120A/B ixzr08n120a	PDF
IXZ318N50 Abstract: No abstract text available Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V	Original	IXZ318N50 IXZ318N50 dsIXZ318N50	PDF
"RF MOSFETs" Abstract: 1 RF s 640 a 931 "RF MOSFET" transistor tl 187 IXZ308N120 ixzr08n120a IXYS RF IXZR08N120 5-486 731 MOSFET Text: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXZR08N120 IXZR08N120A/B IXZ308N120 dsIXZR08N120 "RF MOSFETs" 1 RF s 640 a 931 "RF MOSFET" transistor tl 187 ixzr08n120a IXYS RF IXZR08N120 5-486 731 MOSFET	PDF

IXYS Abstract: D600B Text: IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement N-Channel Enhancement ModeMode Switch Mode RF MOSFET Low Qg and RZ-MOS g Low Capacitance TM MOSFET Process High for dv/dt Optimized RF Operation Nanosecond Ideal for Class C, D,Switching & E Applications	Original	IXZR16N60 IXZR16N60A/B dsIXZR16N60 IXYS D600B	PDF
Arlon Abstract: MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1* MRF282ZR1* RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1* MRF282ZR1* DEVICEMRF282/D Arlon MRF282	PDF
300 uF 450 VDC Mallory Capacitor Abstract: 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282S MRF282Z MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282S MRF282Z MRF282S 300 uF 450 VDC Mallory Capacitor 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282Z MRF282	PDF
27271SL Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 27271SL MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310	PDF
transistor z4 n Abstract: NPN transistor mhz s-parameter mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282/D transistor z4 n NPN transistor mhz s-parameter mjd310 MRF282	PDF
MRF282 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 MRF282	PDF
RE65G1R00 Abstract: 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282SR1 MRF282ZR1 Arlon mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 RE65G1R00 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282ZR1 Arlon mjd310 MRF282	PDF
IXZ318N50 Abstract: No abstract text available Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on ≤ 0.34 Ω VDSS	Original	IXZ318N50 dsIXZ318N50 IXZ318N50	PDF
IXZ211N50 Abstract: IXZ2211N50 DSAE0059430 Text: IXZ2211N50 Z-MOS RF Power MOSFET Dual N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings Per Device VDSS TJ = 25°C to 150°C	Original	IXZ2211N50 IXZ211N50 dsIXZ2211N50 IXZ2211N50 DSAE0059430	PDF
j718 Abstract: VK200/10-3B Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	OCR Scan	MRF3010 DL110/D) MRF3010 VK200 j718 VK200/10-3B	PDF

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RF MOSFET CLASS AB Search Results

RF MOSFET CLASS AB Result Highlights (5)

RF MOSFET CLASS AB Datasheets Context Search

5r1 mosfet transistor

mosfet 4702

rf power mosfet

"RF MOSFETs"

"RF MOSFET" 300W

Untitled

mosfet 4702

IXZ2210N50L

IXZR18N50

1 RF s 640 a 931

IXZ316N60

ixzr08n120a

IXZ318N50

"RF MOSFETs"

IXYS

Arlon

300 uF 450 VDC Mallory Capacitor

27271SL

transistor z4 n

MRF282

RE65G1R00

IXZ318N50

IXZ211N50

j718