IXZ316N60
Abstract: MOSFET "symbol 7V"
Text: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 600 V ID25 = 18 A Symbol Test Conditions RDS on ≤ 0.47 Ω VDSS
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IXZ316N60
dsIXZ316N60
IXZ316N60
MOSFET "symbol 7V"
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IXZ316N60
Abstract: mosfet 50V
Text: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V
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Original
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PDF
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IXZ316N60
IXZ316N60
dsIXZ316N60
mosfet 50V
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