IXZ318N50
Abstract: No abstract text available
Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on ≤ 0.34 Ω VDSS
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IXZ318N50
dsIXZ318N50
IXZ318N50
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IXZ318N50
Abstract: No abstract text available
Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V
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Original
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PDF
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IXZ318N50
IXZ318N50
dsIXZ318N50
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