BSS125
Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line
Text: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)
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BUK457-500B
Abstract: PHP8N50 PHW9ND50 FREDFET
Text: Philips Semiconductors Product specification PowerMOS transistor FREDFET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor incorporating a Fast Recovery Epitaxial Diode FRED . This gives improved switching performance in half-bridge
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OT429
PHW9ND50
BUK457-500B
PHP8N50
PHW9ND50
FREDFET
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FREDFET
Abstract: 8A74
Text: SIEMENS AKTIEN6ESELLSCHAF SIE D fl235b05 0 0 4 2 n s SG5 • S I E G -T -3 5 -/ / SIEMENS SIPMOS Leistungstransistoren SIPMOS* Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse
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fl235b05
C67078-S1401-A2
C67078-A3207-A2
C67078-A1102-A2
C67078-A1100-A2
C67078-A1400-A2
C67078-A3209-A2
C67078-A3210-A2
C67078-A1105-A2
C67078-A3205-A2
FREDFET
8A74
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0AB7
Abstract: BUZ p channel BUZ384
Text: SIEMENS SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse diodes (N channel) Typ Type M ds ^D S(on)m ax Id P tot V n A W Bestellnummer Ordering code
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C67078-S1401-A2
C67078-A3207-A2
O-220
O-218
67078-A1100-A2
C67078-A1400-A2
C67078-A3209-A2
C67078-A3210-A2
0AB7
BUZ p channel
BUZ384
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SIPMOS application note
Abstract: SIEMENS MOSFET application BSS125
Text: SIEMENS 5 Application Notes FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components b y W a lt e r S c h u m b r u tz k i With higher clock frequencies in power switches inverse-capable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (< 2 kW) MOS half
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OCR Scan
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PDF
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X0183
SIPMOS application note
SIEMENS MOSFET application
BSS125
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diode T-71
Abstract: BUK657-400B
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK657-400B
T0220AB
BUK657-400B
diode T-71
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK655-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK655-500B
T0220AB
BUK655-500B
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery
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BUK637-400B
BUK637-400B
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BUK617-500AE
Abstract: SVM91 TRANSISTOR C 557 B W 21
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery
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BUK617-500AE/BE
BUK617
-500AE
-500BE
BUK617-500AE
SVM91
TRANSISTOR C 557 B W 21
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BUZ210
Abstract: Siemens t35 a1105 BUZ 215 FREDFET s132 C67078-A1400-A2 C67078-A3205-A2 C67078-A3207-A2 C67078-A3209-A2
Text: SIE M EN S A K T I E N 6 E S E L L S C H A F SIE T> WÊ û 2 3 5 bO S GOMSnS SGS B I S I E 6 t S IE M E N S 35 ' / / SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancem ent types with high speed reverse
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OCR Scan
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023Sb05
T-35-//
C67078-S1401-A2
O-220
C67078-A3207-A2
O-218
C67078-A1102-A2
O-204
C67078-A1100-A2
BUZ210
Siemens t35
a1105
BUZ 215
FREDFET
s132
C67078-A1400-A2
C67078-A3205-A2
C67078-A3209-A2
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ht 25 transistor
Abstract: BUK638-500B
Text: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK638-500B
711DflSb
ODb431S
ht 25 transistor
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE » E9 711GÖEb 0Db431b Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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0Db431b
T0220AB
BUK655-500B
711002b
aab432D
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BUK637-400A
Abstract: BUK637-400B
Text: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control
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BUK637-400A
BUK637-400B
BUK637
-400A
-400B
M89-1166/RC
BUK637-400A
BUK637-400B
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BUK637-600A
Abstract: BUK637-600B BUK637-600C
Text: Philips Components BUK637-600A BUK637-600B BUK637-600C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode,
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BUK637-600A
BUK637-600B
BUK637-600C
BUK637
-600A
-600B
-600C
BUK637-600A
BUK637-600B
BUK637-600C
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BUZ211
Abstract: No abstract text available
Text: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.
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BUZ211
T-si-13
bbS3131
D014b
T-39-13
BUZ211_
0014b74
BUZ211
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400v p - CHANNEL mos
Abstract: STH9N50D
Text: SGS-THOMSON STH9N50D M N - CHANNEL ENHANCEMENT MODE _ FREDFET PRELIMINARY DATA TYPE STH9N50D V dss RDS on Id 500 V 0.85 a 9 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE
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STH9N50D
O-218
400v p - CHANNEL mos
STH9N50D
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery
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OT227B
BUK617-500AE/BE
BUK617
0030fib4
1E-02
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BUK637-400A
Abstract: BUK637-400B P02S
Text: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable
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BUK637-400A
BUK637-400B
BUK637
-400A
-400B
BUK637-400B
P02S
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/ DISCRE TE DQEObSS b 5SE D PowerMOS transistor Fast Recovery Diode FET BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery
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BUK627-450B
b53T31
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FUH -29A001B
Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Text: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in
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BUK638-800A/B
BUK638
-800A
1E-09
BUK638-80Ã
FUH -29A001B
BUK638-800A
BUK638-800B
WO 02S
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable
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Q030b7D
BUK637-400A
BUK637-400B
BUK637
-400A
D0S0h74
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 5SE D • bbS3T31 OOaablQ fl ■ PowerMOS transistor Fast Recovery Diode FET BUK655-450B T-31-/3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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bbS3T31
BUK655-450B
T-31-/3
oni25
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MC 140 transistor
Abstract: "MC 140" transistor transistor mc 140 BUZ385 T-39-13 MC 150 transistor
Text: N AMER PHILIPS/DISCRETE QbE 3> PowerMOS transistor • bb53131 0014714 1 BUZ385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor
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bb53131
BUZ385
T0218AA;
BUZ38S
T-39-13
MC 140 transistor
"MC 140" transistor
transistor mc 140
BUZ385
T-39-13
MC 150 transistor
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BUK657
Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
Text: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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fab53131
D2D71D
BUK657-500A
BUK657-500B
BUK657-500C
BUK657
-500A
-500B
-500C
ID/100
BUK657-500C
T0220AB
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