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    BUZ211

    Abstract: No abstract text available
    Text: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.


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    PDF BUZ211 T-si-13 bbS3131 D014b T-39-13 BUZ211_ 0014b74 BUZ211