Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BUK617 Search Results

    BUK617 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK617-500AE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK617-500AE Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK617-500AE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK617-500AE Philips Semiconductors PowerMOS transistor Fast recovery diode FET Scan PDF
    BUK617-500BE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK617-500BE Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK617-500BE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK617-500BE Philips Semiconductors PowerMOS transistor Fast recovery diode FET Scan PDF

    BUK617 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUK617-500AE

    Abstract: SVM91 TRANSISTOR C 557 B W 21
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery


    OCR Scan
    BUK617-500AE/BE BUK617 -500AE -500BE BUK617-500AE SVM91 TRANSISTOR C 557 B W 21 PDF

    BUK617-500AE

    Abstract: TRANSISTOR C 557 B TIC 136 Transistor
    Text: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan
    7110a5t. BUK617-500AE/BE OT227B BUK617 -500AE BUK617-500AE BUK617-500AE TRANSISTOR C 557 B TIC 136 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery


    OCR Scan
    OT227B BUK617-500AE/BE BUK617 0030fib4 1E-02 PDF

    "1pg" transistor

    Abstract: BUK617-500AE BUK617-500BE BUK617
    Text: N ANER PHILIPS/DISCRETE t.'lE D • bbSBSBl □ QBOat.D 541 « A P X Philips Sem iconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope.


    OCR Scan
    BUK617-500AE/BE OT227B BUK617 -500AE "1pg" transistor BUK617-500AE BUK617-500BE PDF

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan
    1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan
    LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    buk638-500b

    Abstract: No abstract text available
    Text: Pow er Devices Power M O SFET Transistors Logic Level FET's in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) RDs ON max (fl) 100 100 100 100 100 100 100 100 100 100 100 100 100 BUK541-100A BUK552-100B BUK542-100B


    OCR Scan
    BUK541-100A BUK552-100B BUK542-100B BUK542-100A BUK552-100A BUK553-100B BUK543-100B BUK553-100A BUK543-100A BUK555-100B buk638-500b PDF

    d 434 mosfet

    Abstract: T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606
    Text: P hilip s S e m ico n d u cto rs Index PowerMOS Transistors including TOPFETs and IGBTs ¡PAGE | TYPE NUMBER |TECHNOLOGY ENVELOPE BUK100-50DL TOPFET T0220AB 24 BUK100-50GL TOPFET T0220AB 32 BUK100-50GS TOPFET T0220AB 41 BUK101-50DL TOPFET T0220AB 50 BUK101-50GL


    OCR Scan
    BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L d 434 mosfet T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606 PDF

    BUK417-500B

    Abstract: TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide
    Text: Philips Semiconductors PowerMOS Transistors including TO P FETs and IGBTs V DS V @ ID (A) Rdsjon) (ß) Id w Selection Guide Pd (W) TYPE NUMBER TECH NO LO GY ENVELOPE SOT263 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50S TOPFET SOT263


    OCR Scan
    T0220AB OT186 OT186 BUK856-400IZ BUK417-500B TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide PDF