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    IXFH52N30P Search Results

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    IXFH52N30P Price and Stock

    Littelfuse Inc IXFH52N30P

    MOSFET N-CH 300V 52A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH52N30P Tube 1
    • 1 $7.52
    • 10 $7.52
    • 100 $6.00033
    • 1000 $4.7371
    • 10000 $3.99496
    		Buy Now

    IXYS Corporation IXFH52N30P

    MOSFET 52 Amps 300V 0.066 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH52N30P
    • 1 $7.68
    • 10 $6.84
    • 100 $6.13
    • 1000 $4.74
    • 10000 $3.99
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    TTI IXFH52N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.33
    • 10000 $3.95
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    TME IXFH52N30P 1
    • 1 $6.83
    • 10 $5.43
    • 100 $4.88
    • 1000 $4.88
    • 10000 $4.88
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    New Advantage Corporation IXFH52N30P 835 1
    • 1 -
    • 10 -
    • 100 $8.96
    • 1000 $8.36
    • 10000 $8.36
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    IXFH52N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFH52N30P IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

    IXFH52N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = =   RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A  73m 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 IXFH52N30P 52N30P

    52N30P

    Abstract: IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30
    Text: IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFH52N30P IXFT52N30P PolarTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings


    Original     		PDF IXFH52N30P IXFT52N30P O-268 O-247AD 52N30P 52N30P

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFV52N30P IXFV52N30PS IXFH52N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF