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    IXFH10N100P Search Results

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    IXFH10N100P Price and Stock

    Littelfuse Inc IXFH10N100P

    MOSFET N-CH 1000V 10A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH10N100P Tube 614 1
    • 1 $7.78
    • 10 $7.78
    • 100 $6.21433
    • 1000 $4.90618
    • 10000 $4.13754
    		Buy Now

    IXYS Corporation IXFH10N100P

    MOSFET 10 Amps 1000V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH10N100P 576
    • 1 $7.94
    • 10 $7.71
    • 100 $6.34
    • 1000 $5.01
    • 10000 $4.13
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    TTI IXFH10N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.91
    • 10000 $4.09
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    TME IXFH10N100P 100 1
    • 1 $6.98
    • 10 $5.55
    • 100 $5.17
    • 1000 $5.17
    • 10000 $5.17
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    IXFH10N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFH10N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1KV 10A TO-247AD Original PDF

    IXFH10N100P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFH10N100P

    Abstract: No abstract text available
    Text: IXFH10N100P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 10A Ω 1.4Ω 300ns TO-247 AD Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFH10N100P 300ns O-247 100ms 10N100P 3-12-13-A IXFH10N100P

    10N100P

    Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions


    Original     		PDF IXFH10N100P IXFV10N100P IXFV10N100PS 300ns PLUS220 10N100P 10N100P IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH10N100P IXFV10N100P IXFV10N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions


    Original     		PDF IXFH10N100P IXFV10N100P IXFV10N100PS 300ns PLUS220 10N100P