BSP304
Abstract: BSP304A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode
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BSP304;
BSP304A
BSP304
BSP304A
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BSS110
Abstract: CGY20
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode
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BSS110
MAM144
CGY2020G
SCA50
647021/1200/01/pp12
BSS110
CGY20
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BSP230
Abstract: MLC696
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC13b 1997 Oct 21 Philips Semiconductors Product specification P-channel enhancement mode
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BSP230
SC13b
MAM121
OT223
SCA55
137107/00/03/pp12
BSP230
MLC696
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BSP230
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 17 Philips Semiconductors Product specification P-channel enhancement mode
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BSP230
SC13b
MAM121
OT223
SCA54
137107/00/02/pp12
BSP230
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC13b 1997 Oct 21 Philips Semiconductors Product specification P-channel enhancement mode
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BSP230
SC13b
MAM121
OT223
SCA55
137107/00/03/pp12
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BD329/BD330
Abstract: BD329 BD330
Text: BD329 PHILIPS INTERNATIONAL 5fc>E D TllDôHb 004EÛ7G =170 • P H I N ■ T " 3 3 -0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r - r a d io output sta g e s. P -N -P com plem ent is BD330. M atched p a irs can be supplied.
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BD329
OT-32
BD330.
O-126
OT-32)
T-33-07
711005b
BD329/BD330
BD329
BD330
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP304; BSP304A FEATURES DESCRIPTION • Direct interface to C-MOS, TTL etc. P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.
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BSP304
BSP304;
BSP304A
MLC691
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transistor SMD g 28
Abstract: smd transistor ds 65
Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor BSP230 FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interruptor in telephone sets
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OT223
BSP230
ULC691
transistor SMD g 28
smd transistor ds 65
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transistor 2061
Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
Text: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59
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711Dfl5b
0D7GQ24
2PD602;
2PD602A
2PB710
2PB710A
2PD602Q:
2PD602R:
2PD602S:
2PD602AQ:
transistor 2061
2PD602S
2PD602
2PD602A
2PD602AQ
2PD602AR
2PD602Q
2PD602R
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2PB710
Abstract: 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602Q 2PD602R 2PD602S SC59 transistor 2061
Text: Philips Semiconductors 7 1 1 D flE b D D 7 G0 2 4 bSG • P H IN NPN general purpose transistor FEATURES Objective specification 2PD602; 2PD602A PIN CONFIGURATION • Large collector current • Low col lector-emitter saturation voltage. DESCRIPTION H-
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711DflEb
007Q021J
2PD602;
2PD602A
2PB710
2PB710A
VSA314
2PD602Q:
2PD602R:
2PD602S:
2PD602
2PD602A
2PD602AQ
2PD602Q
2PD602R
2PD602S
SC59
transistor 2061
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE D bbS3T31 0D57T30 156 H A P X Philips Semiconductors D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e A u g u s t 1990 BSX49 Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO
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bbS3T31
0D57T30
BSX49
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UC3425
Abstract: transistor k 2723 IC 541 BSX49 IEC134
Text: PHILIPS IN TE RNATIONAL Data sheet status Preliminary specification date of issue August 1990 SbE D m 711002b 0G42mfi übO MP H I N BSX49 t 2 7 -2 3 - Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO VCEO lc Ptot Tj hFE PARAMETER collector-base voltage
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711002b
BSX49
7Z69420
UC3425
transistor k 2723
IC 541
IEC134
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BUK456
Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
Text: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
D0b41Db
BUK456-60A/B
T0220AB
BUK456
7110fi2b
DDb411D
BUK456-80A/B
BUK456-60A
BUK456-60B
BUK456-80A
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722 smd transistor
Abstract: N-channel mos sot23
Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH101 FEATURES PINNING - SOT23 • Very low threshold PIN SYMBOL DESCRIPTION • High-speed switching 1 • No secondary breakdown 2 9 s source • Direct interface to C-MOS, TTL etc.
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BSH101
722 smd transistor
N-channel mos sot23
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BUK436-60A
Abstract: 134 T31 100-P BUK436-60B
Text: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in
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711D6Sb
BUK436-60A/B
BUK436
drai11062b
BUK436-60A
134 T31
100-P
BUK436-60B
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PL82
Abstract: 7R030 VS20 pas valve Z8210 scans-0018002 PHILIPS PL82
Text: zJUniukdt" IPL 82 P3NT0D3 for use as frame and Sound output valve P3NT0D3 pour utilisation en amplificatrice de sortie de base de temps image et du son PENT0DJ2 zur Verwendung als Endröhre für die vertikale Ablenkung und für die Schallwiedergabe Heating:
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BUK457-500B
Abstract: GK 74 transistor
Text: bSE D m PHILIPS INTERNATIONAL 7110fl2b D D b m 4 1 361 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use In
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711DfiSb
0Db4142
BUK457-500B
-T0220AB
BUK457-500B
GK 74 transistor
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BUK436-1000B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
BUK436-1000B
BUK436-1000B
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diode sy 171 10
Abstract: BUK436-1000B diode sy 171
Text: bSE T> m PHILIPS INTERNATIONAL 711062b □Db3cH l TDM • PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
BUK436-1000B
7110fl5b
diode sy 171 10
BUK436-1000B
diode sy 171
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BUK457-400B
Abstract: T0220AB
Text: PHILIPS IN TE RNA TI ONA L bSE J> Bl 7110flEb ODb413b Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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711052b
BUK457-400B
T0220AB
BUK457-400B
T0220AB
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BUK437-400B
Abstract: philips 5b
Text: PHILIPS INTERNATIONAL bSE D • 711Dfl2fc. GGbaTlh S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110A2L.
BUK437-400B
philips 5b
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YBs transistor
Abstract: BUK437-400B
Text: PHILIPS INTERNATIONAL bSE D O 7110fl5b DDbBTlb 5^b « P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl5b
BUK437-400B
VA62b
00b3T20
YBs transistor
BUK437-400B
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2h QQb43.31 432 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device Is Intended for use In
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7110fl2h
QQb43
BUK456-1000B
T0220AB
7110fi2t.
00b4135
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D • 711GÖ2b GübM3Gl Sb7 H P H I N Philips Semiconductors Product Specification BUK637-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
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BUK637-400B
711DflSb
0Qb43D5
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