Untitled
Abstract: No abstract text available
Text: SEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The juPD4216100 and the /PD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili
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pPD4216100,
juPD4216100
/iPD4217100
JHPD4216100,
S3IH-68158
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 1 6 1 0 0 ,4 2 1 7 1 0 0 16 M BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE Description The //PD4216100, 4217100 are 16 777 216 words by 1 bit dynam ic CMOS RAMs. These are packed in 26-pin Plastic TSOP II and 26-pin Plastic SOJ.
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uPD4216100
uPD4217100
26-pin
PD4216100-50
/iPD4217100-50
PD4216100-60
//PD4217100-60
PD4216100-70
PD4217100-70
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SA9C
Abstract: No abstract text available
Text: SEC fiPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description T he juPD4216100 and the /PD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power supply. A dvanced polycide technology m inim izes sili
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uPD4216100
uPD4217100
SA9C
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4216100
Abstract: 4216100-70
Text: DATA SHEET MOS INTEGRATED CIRCUIT MD42S16100, 4216100,42S17100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCR IPTIO N The /¿PD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the /iPD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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MD42S16100,
42S17100
uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
/iPD42S16100,
//PD42S16100,
4216100
4216100-70
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4216100
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT r/iPD42S16100 ,4 2 1 6 1 0 0 ,4 2 S 1 7 1 0 0 ,4217100 16M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The juPD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the ¿¿PD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
16M-BIT
PD42S16100,
42S17100,
42S17100
4216100
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intel 82c51
Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160
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51V16100
51V16160
51V16400
51V17100
51V17400
51V18160
TC5116160A
TC5116800A
TC5117800A
uPD4216100
intel 82c51
Mitsubishi 82c54
intel p8085a
PD8155H
nec 8212c
82C55
harris 82c55
82C59 toshiba
m5l8288
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4216100
Abstract: sm 0038 PIN DIAGRAM M81B42
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4216100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE Description The /iPD4216100, 4217100 are 16 777 216 w o rd s b y 1 b it d y n a m ic CMOS RAMs. These are packed in 26-pin Plastic TSOP II and 26-pin Plastic SOJ.
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uPD4216100
uPD4217100
/iPD4216100,
26-pin
//PD4216100-50
/iPD4217100-50
IPD4216100-60
pPD4217100-60
/jPD4216100-70
4216100
sm 0038 PIN DIAGRAM
M81B42
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT MPD4216100, 4217100 16M -B IT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The fiPD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 words by 1 bit organization
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PD4216100,
fiPD4216100,
pPD4216100
cycles/64
/iPD4217100
cycles/32
pPD4216100-50
PD4217100-50
016t8oos
b427525
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Untitled
Abstract: No abstract text available
Text: NEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Prelim inary Information Description T he /JPD4216100 and the /PD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power
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pPD4216100,
/JPD4216100
/JPD4217100
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0WXXX
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD4216100, 4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The |iPD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 w o rd s by 1 b it organiza tion
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uPD4216100
uPD4217100
iPD4216100,
PD4216100
PD4217100
PD4217100-50
UPD4216100-60
/JPD42171
008tS
PD4216100G3,
0WXXX
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uPD4216100
Abstract: 4216100
Text: NEC ELECTRONICS INC blE » • b4E7S2S 0033^ 34 SES MNECE » ,-y I W NEC Electronics Inc. fiPD4216100, 4217100 16,777,216 x 1-Bit Dynamic CMOS RAM T W Description The pPD4216100 and the /PD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit
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uPD4216100
pPD4216100
/iPD4217100
46-volt
b427555
JJPD4216100,
4216100
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