Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 1 6 1 0 0 ,4 2 1 7 1 0 0 16 M BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE Description The //PD4216100, 4217100 are 16 777 216 words by 1 bit dynam ic CMOS RAMs. These are packed in 26-pin Plastic TSOP II and 26-pin Plastic SOJ.
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uPD4216100
uPD4217100
26-pin
PD4216100-50
/iPD4217100-50
PD4216100-60
//PD4217100-60
PD4216100-70
PD4217100-70
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Untitled
Abstract: No abstract text available
Text: SEC PD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The PD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili
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pPD4216100,
juPD4216100
/iPD4217100
JHPD4216100,
S3IH-68158
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SA9C
Abstract: No abstract text available
Text: SEC PD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description T he PD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power supply. A dvanced polycide technology m inim izes sili
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uPD4216100
uPD4217100
SA9C
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4216100
Abstract: 4216100-70
Text: DATA SHEET MOS INTEGRATED CIRCUIT MD42S16100, 4216100,42S17100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCR IPTIO N The /¿PD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the /iPD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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MD42S16100,
42S17100
uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
/iPD42S16100,
//PD42S16100,
4216100
4216100-70
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4216100
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT r/iPD42S16100 ,4 2 1 6 1 0 0 ,4 2 S 1 7 1 0 0 ,4217100 16M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The juPD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the ¿¿PD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
16M-BIT
PD42S16100,
42S17100,
42S17100
4216100
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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4216100
Abstract: sm 0038 PIN DIAGRAM M81B42
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4216100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE Description The /PD4216100, 4217100 are 16 777 216 w o rd s b y 1 b it d y n a m ic CMOS RAMs. These are packed in 26-pin Plastic TSOP II and 26-pin Plastic SOJ.
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uPD4216100
uPD4217100
/iPD4216100,
26-pin
//PD4216100-50
/iPD4217100-50
IPD4216100-60
pPD4217100-60
/jPD4216100-70
4216100
sm 0038 PIN DIAGRAM
M81B42
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT PD4216100, 4217100 16M -B IT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The PD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 words by 1 bit organization
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PD4216100,
fiPD4216100,
pPD4216100
cycles/64
/iPD4217100
cycles/32
pPD4216100-50
PD4217100-50
016t8oos
b427525
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0WXXX
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD4216100, 4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The |PD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 w o rd s by 1 b it organiza tion
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uPD4216100
uPD4217100
iPD4216100,
PD4216100
PD4217100
PD4217100-50
UPD4216100-60
/JPD42171
008tS
PD4216100G3,
0WXXX
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uPD4216100
Abstract: 4216100
Text: NEC ELECTRONICS INC blE » • b4E7S2S 0033^ 34 SES MNECE » ,-y I W NEC Electronics Inc. PD4216100, 4217100 16,777,216 x 1-Bit Dynamic CMOS RAM T W Description The PD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit
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uPD4216100
pPD4216100
/iPD4217100
46-volt
b427555
JJPD4216100,
4216100
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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Untitled
Abstract: No abstract text available
Text: USER'S MANUAL I39EJ2VOUMOO Japan NEC 921 INTRODUCTION Purpose This manual is intended for users who understand DRAM functions and design applica tion systems using DRAMs. Readers This manual explains the basic properties of DRAM and their use. How to read this manual It is assumed that readers of this manual have general knowledge in the fields of
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I39EJ2VOUMOO
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Untitled
Abstract: No abstract text available
Text: Document No. M10339EJ2V0UMU1 983 IN T R O D U C TIO N Purpose This manual is intended for users who understand DRAM functions and design applica tion systems using DRAMs. Readers This manual explains the basic properties of DRAM and their use. How to read this manual It is assumed that readers of this manual have general knowledge in the fields of
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M10339EJ2V0UMU1
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