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    UPD4216165LG5-A60-7JF

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The µPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF PD42S16165L, 4216165L 16-BIT, 4216165L PD42S16165L 50-pin 42-pin UPD4216165LG5-A60-7JF

    TOFC

    Abstract: 4216165L
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper


    Original
    PDF PD42S16165L, 4216165L 16-BIT, 4216165L PD42S16165L 50-pin 42-pin TOFC

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The µPD42S16165, 4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF PD42S16165, 16-BIT, PD42S16165 50-pin 42-pin 10bots

    Untitled

    Abstract: No abstract text available
    Text: PD4216165 1M X 16-Bit Dynamic CM OS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ji/PD4216165 devices are dynam ic CM O S RAMs with an optional hyper-page mode organized as 1,048,576 words by 16 bits. A single-transistor dynam ic storage


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    PDF pPD4216165 16-Bit ji/PD4216165 42-Pin 64-ms /JPD4216165G5-70 //PD4216165G5-50-7KF JUPD4216165G5-60 /iPD4216165G5-70 //PD4216165LE-50

    Untitled

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, PD42S16165L, 4216165Lare uPD42S16165L 4216165L 50-pin 42-pin 6165L-A L427525

    nec A2C

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, uPD42S16165L uPD4216165L /JPD42S16165L, 4216165L 50-pin 42-pin pPD42S16165L-A60, 4216165L-A60 /iPD42Sl6165L-A70, nec A2C

    PJ 1169

    Abstract: No abstract text available
    Text: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.


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    PDF M10339EJ3V0UM00 PJ 1169

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /JPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.


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    PDF 16-BIT, uPD42S16165L uPD4216165L PD42S16165L iPD42S16165L, 4216165L 50-pin 42-pin IR35-207-3 VP15-207-3

    nec hyper

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU P D 4 2 1 6 1 6 5 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD4216165 is a 1 048 576 w o rd s by 16 b its d yn a m ic CMOS RAM w ith o p tio n a l h yp e r page m ode.


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    PDF 16-BIT, uPD4216165 /zPD4216165 50-pin 42-pin cycles/64 /iPD4216165-50 /iPD4216165-60 PD4216165-70 20too§ nec hyper

    707j

    Abstract: XC002 D42S161
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .


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    PDF 16-BIT, 42S16165, 50-pin 42-pin IR35-207-3 VP15-207-3 707j XC002 D42S161

    Untitled

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT M P D 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ¿¿PD4216165 is a 1 048 576 words by 16 bits dynamic CMOS RAM with optional hyper page mode. Hyper page m ode is a kind of the page mode and is useful for the read operation.


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    PDF 16-BIT, uPD4216165 fiPD4216165 50-pin 42-pin cycles/64 PD4216165-50 /iPD4216165-60 /iPD4216165-70 20t8os

    Untitled

    Abstract: No abstract text available
    Text: USER'S MANUAL NEC Document No. M10339EJ2V0UMU1 491 [MEMO] 492 INTRODUCTION Purpose This manual is intended for users who understand DRAM functions and design applica­ tion systems using DRAMs. Readers This manual explains the basic properties of DRAM and their use.


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    PDF M10339EJ2V0UMU1

    D42S16165

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /xPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16165L uPD4216165L 16-BIT, /xPD42S16165L, 4216165L /xPD42S16165L PD42S16165L, 50-pin 42-pin D42S16165

    42S16165

    Abstract: ahW MARKING
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 5 , 4 2 1 6 1 6 5 1 6 M -B IT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S16165,4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode


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    PDF 16-BIT, uPD42S16165 uPD4216165 jjPD42S16165 iPD42S16165, 50-pin 42-pin iPD42S16165-50 MPD42S16166-60, PD42S16t65-70 42S16165 ahW MARKING

    K777

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The //PD42S16165L, 4216165L are 1 048 576 w o rd s by 16 b its d y n a m ic CMOS R A M s w ith o p tio n a l h yp e r page


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    PDF 16-BIT, uPD42S16165L uPD4216165L /JPD42S16165L, 4216165L 42-pin //PD42S16165L-A60, 4216165L-A60 PD42S16165L-A70, 4216165L-A70 K777

    s727E

    Abstract: d4216165 uPD4216165-60 tlu 011 PD4216165
    Text: DATA SHEET 'J E C MOS INTEGRATED CIRCUIT /¿PD4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The /PD4216165 is a 1 048 576 w ords by 16 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind o f the page mode and is useful for the read operation.


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    PDF uPD4216165 16-BIT, /iPD4216165 fiPD4216165 50-pin 42-pin cycles/64 /1PD4216165-50 uPD4216165-60 iiPD4216165-70 s727E d4216165 tlu 011 PD4216165

    Untitled

    Abstract: No abstract text available
    Text: N EC MOS INTEGRATED CIRCUIT ju P D 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿PD4216165 is a 1 048 576 words by 16 bits dynamic C M O S RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation,


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    PDF D4216165 16-BIT, IPD4216165 nPD4216165 50-pin 42-pin cycles/64 /iPD4216165-50 b42752S PD4216165

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WOFD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The nPD42S16165L, 42 16165Lare 1 048 576 w o rd s by 16 b its d yn a m ic C MOS R A M s w ith o p tio n a l h yp e r page


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    PDF PD42S16165L, 4216165L 16-BIT, nPD42S16165L, 16165Lare juPD42S16165L 4216165L k42752S aDS74% 16165L,

    Untitled

    Abstract: No abstract text available
    Text: Document No. M10339EJ2V0UMU1 983 IN T R O D U C TIO N Purpose This manual is intended for users who understand DRAM functions and design applica­ tion systems using DRAMs. Readers This manual explains the basic properties of DRAM and their use. How to read this manual It is assumed that readers of this manual have general knowledge in the fields of


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    PDF M10339EJ2V0UMU1

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, D escription The ¿¿PD42S16165L, 4216165L are 1,048,576 words by 16 bits C M O S dynam ic RA M s with optional EDO.


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    PDF 16M-BIT 16-BIT, uPD42S16165L uPD4216165L iPD42S16165L iPD42S16165L, 50-pin 42-pin IR35-207-3 P15-207-3