Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PCS6106TR Search Results

    PCS6106TR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48 Ohms Resistors CGS

    Abstract: PTF102003 600B microstrip resistor PCC103BCT
    Text: 375D–03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET PTF102003 Description Key Features The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


    Original     		PDF PTF102003 PTF102003 PCS6106TR PCC103BCT 1/16W 48 Ohms Resistors CGS 600B microstrip resistor PCC103BCT

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805

    LM7805 smd 8 pin

    Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
    Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 smd transistor marking C14

    AT27280

    Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
    Text: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTFA212002E PTFA212002E 200-watt, AT27280 variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 SMD TRANSISTOR MARKING 904

    200B

    Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
    Text: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA211001E PTFA211001E 100-watt, H-30248-2 200B BCP56 LM7805 infineon gold P2KECT-ND

    ssy 1920

    Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
    Text: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,


    Original     		PDF PTFA191001E PTFA191001F PTFA191001E PTFA191001F 100-watt, IS-95 CDMA2000 H-36248-2 ssy 1920 LM 2931 AT 05 BCP56 LM7805

    200B

    Abstract: BCP56 LM7805 PTFA210451E infineon gold
    Text: PTFA210451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2110 – 2170 MHz Description The PTFA210451E is a thermally-enhanced, 45-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210451E PTFA210451E 45-watt, 200B BCP56 LM7805 infineon gold

    LM7805 smd

    Abstract: LM7805 smd transistor marking C14
    Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency


    Original     		PDF PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 LM7805 smd LM7805 smd transistor marking C14

    Untitled

    Abstract: No abstract text available
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210601E PTFA210601F 60-watt, H-30265-2 PTFA210601F* H-31265-2

    A2103

    Abstract: No abstract text available
    Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA


    Original     		PDF PTFA210301E PTFA210301F 30-watt, PTFA210301F* A2103

    Untitled

    Abstract: No abstract text available
    Text: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and


    Original     		PDF PTFA081501E PTFA081501F 150-watt, CDMA2000 PTFA081501F* IS-95

    d 417 transistor

    Abstract: No abstract text available
    Text: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211001E PTFA211001F 100-watt, PTFA211001F* d 417 transistor

    PTFA072401FLV5XWSA1

    Abstract: VARIABLE RESISTOR 2K LM7805 LTN 156
    Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 30 V, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the


    Original     		PDF PTFA072401EL PTFA072401FL PTFA072401FL 240-watt H-33288-2 H-34288-2 PTFA072401FLV5XWSA1 VARIABLE RESISTOR 2K LM7805 LTN 156

    A211801E

    Abstract: 200B103 LM7805 PTFA211801E
    Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E 200B103 LM7805

    PTFA043002

    Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010

    rogers

    Abstract: No abstract text available
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210451 PTF210451 rogers

    po111

    Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
    Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They


    Original     		PDF PTFA041501GL PTFA041501HL PTFA041501GL PTFA041501HL 150-watt PG-64248-2 IS-95 po111 3773 transistor voltage diagram BCP56 LM7805 infineon gold

    diode c723

    Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
    Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to


    Original     		PDF PTFA072401EL PTFA072401FL PTFA072401EL PTFA072401FL 240-watt H-33288-2 H-34288-2 diode c723 VARIABLE RESISTOR 2K LM7805 RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR

    roger

    Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
    Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and


    Original     		PDF PTF041501E PTF041501F 150watt, CDMA2000 H-30260-2 H-31260-2 roger H-30260-2 LM7805 ceramic capacitor 103 z 21

    PTF141501E

    Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
    Text: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital


    Original     		PDF PTF141501E PTF141501F PTF141501E 150-watt, PTF141501E* PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56

    LM7805

    Abstract: A211801E BCP56 PTFA211801E R250 H-36260-2 infineon 6260
    Text: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA211801E PTFA211801E 180-watt, H-36260-2 LM7805 A211801E BCP56 R250 H-36260-2 infineon 6260

    smd capa

    Abstract: p33k
    Text: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


    Original     		PDF PD21120R6 PD21120R6 PCS6106TR PCC103BCT 1/16W smd capa p33k

    210451

    Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210451 PTF210451 210451 smd marking f2 smd transistor marking l6 BDS31314 PTF210451E

    smd transistor marking l6

    Abstract: TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4
    Text: PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF180601 PTF180601 smd transistor marking l6 TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4