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    600B Search Results

    600B Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX600BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd
    SF Impression Pixel

    600B Price and Stock

    WeEn Semiconductor Co Ltd BTA316-600BT,127

    TRIAC 600V 16A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BTA316-600BT,127 Tube 5,996 1
    • 1 $0.82
    • 10 $0.82
    • 100 $0.5248
    • 1000 $0.44
    • 10000 $0.44
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    STMicroelectronics BTB06-600BWRG

    TRIAC ALTERNISTOR 600V 6A TO220
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    DigiKey BTB06-600BWRG Tube 2,596 1
    • 1 $0.93
    • 10 $0.93
    • 100 $0.5577
    • 1000 $0.39657
    • 10000 $0.30982
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    Bristol Electronics BTB06-600BWRG 180
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    ROHM Semiconductor RS1P600BHTB1

    NCH 100V 60A, HSOP8, POWER MOSFE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RS1P600BHTB1 Cut Tape 2,440 1
    • 1 $2.85
    • 10 $2.389
    • 100 $1.9325
    • 1000 $1.47087
    • 10000 $1.47087
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    Avnet Asia RS1P600BHTB1 24 Weeks 2,500
    • 1 -
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    • 10000 $0.2002
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    CoreStaff Co Ltd RS1P600BHTB1 2,433
    • 1 $2.626
    • 10 $1.97
    • 100 $1.051
    • 1000 $0.945
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    u-blox AG NINA-B416-00B

    RF TXRX MODULE BT TRACE ANT SMD
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    DigiKey NINA-B416-00B Reel 1,500 500
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    NINA-B416-00B Cut Tape 124 1
    • 1 $10.73
    • 10 $9.76
    • 100 $8.8844
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    Richardson RFPD NINA-B416-00B 1
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    STMicroelectronics BTA16-600BRG

    TRIAC 600V 16A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BTA16-600BRG Tube 1,331 1
    • 1 $1.31
    • 10 $1.31
    • 100 $0.8319
    • 1000 $0.57438
    • 10000 $0.49119
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    Avnet Americas BTA16-600BRG Tube 2,472 15 Weeks 1,000
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    Jameco Electronics BTA16-600BRG Each 63 1
    • 1 $1.55
    • 10 $1.35
    • 100 $1.15
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    600B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    600B B&K Precision Test and Measurement - Equipment - Specialty - 12 V SLA BATTERYCAPACITY ANALYZ Original PDF
    600BA Hammond Manufacturing Pulse Transformer, 0.492 mH Prim. Inductance, 20 pF Interwinding Cap, 0.3 uH Prim. Leakage Original PDF

    600B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BTA12 Application note

    Abstract: "BTA12" Application note bta12 600 triac circuit diagram for application BTA12 snubber bta12 bta12 application BTA12-600 BTA12-600BW3G BTA12-800BW3G BTA12600B
    Text: BTA12-600BW3G, BTA12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • •


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    PDF BTA12-600BW3G, BTA12-800BW3G O-220AB BTA12-600BW3/D BTA12 Application note "BTA12" Application note bta12 600 triac circuit diagram for application BTA12 snubber bta12 bta12 application BTA12-600 BTA12-600BW3G BTA12600B

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR S12M8-600B SCRs 12 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts High Surge Current Capability - 100 Amperes On-State Current Rating of 12 Amperes RMS at 80℃


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    PDF S12M8-600B O-220AB O220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR T12M50T-600B TRIACS 12 AMPERES RMS 600 VOLTS Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-state Current Rating of 12 Amperes RMS at 90℃ Uniform Gate Trigger Currents in Three Quadrants


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    PDF T12M50T-600B O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR S12M8-600B SCRs 12 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts High Surge Current Capability - 100 Amperes On-State Current Rating of 12 Amperes RMS at 80℃


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    PDF S12M8-600B O-220AB O220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR T8M10F-600B TRIACS 8 AMPERES RMS 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking Current Sources Four Mode Triggering for Drive Circuits that Source


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    PDF T8M10F-600B O-220AB 2002/95/EC) O-220AB T8M10F600B

    BTA316

    Abstract: BTA316-600B
    Text: BTA316-600B 3Q Hi-Com Triac Rev. 02 — 23 November 2010 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.


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    PDF BTA316-600B BTA316 BTA316-600B

    T8M10F-600B

    Abstract: TJ-108
    Text: LITE-ON SEMICONDUCTOR T8M10F-600B TRIACS 8 AMPERES RMS 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking Current Sources Four Mode Triggering for Drive Circuits that Source


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    PDF T8M10F-600B O-220AB 2002/95/EC) T8M10F-600B TJ-108

    Td16_600b

    Abstract: No abstract text available
    Text: D2 PA K BTA312B-600B 3Q Hi-Com Triac 25 July 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT404 D2PAK surface mountable plastic package intended for use in circuits where high static and dynamic dV/


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    PDF BTA312B-600B OT404 Td16_600b

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BTA416Y-600B 3Q Hi-Com Triac 10 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D TO-220AB internally insulated plastic package intended for use in circuits where high static and


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    PDF BTA416Y-600B OT78D O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BTA316-600BT 3Q Hi-Com Triac 5 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.


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    PDF BTA316-600BT

    Untitled

    Abstract: No abstract text available
    Text: SO T2 23 BTA204W-600B 3Q Hi-Com Triac 15 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and


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    PDF BTA204W-600B OT223

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20F BTA312X-600B 3Q Hi-Com Triac 28 May 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A TO-220F "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt


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    PDF BTA312X-600B OT186A O-220F)

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BTA225-600B 3Q Hi-Com Triac 6 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 TO-220AB plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt


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    PDF BTA225-600B O-220AB)

    BTA312X

    Abstract: BTA312X-600B
    Text: BTA312X-600B 3Q Hi-Com Triac Rev. 03 — 22 November 2010 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt


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    PDF BTA312X-600B OT186A BTA312X BTA312X-600B

    BTA06-600B MAR

    Abstract: BTA06-600B BTA06 application circuit THYRISTOR MAR 615 BTA06-600B equivalent bta06-600
    Text: Preliminary BTA06-600B SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol ○ Features 2.T2 ▼▲ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current IT(RMS = 6 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC )


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    PDF BTA06-600B E228720 O-220F O-220F BTA06-600B MAR BTA06-600B BTA06 application circuit THYRISTOR MAR 615 BTA06-600B equivalent bta06-600

    BV 50

    Abstract: No abstract text available
    Text: BTA312X-600B 3Q Hi-Com Triac 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT186A TO-220F "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt


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    PDF BTA312X-600B OT186A O-220F) BV 50

    Untitled

    Abstract: No abstract text available
    Text: BTA312B-600B 3Q Hi-Com Triac 4 October 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT404 D2PAK surface mountable plastic package intended for use in circuits where high static and dynamic dV/


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    PDF BTA312B-600B OT404

    BUK427-600B

    Abstract: 18-SO BUK427-600 d0411
    Text: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


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    PDF BUK427-600 711Dfl2t. D0411S0 -SOT199 BUK427-600B 18-SO d0411

    Untitled

    Abstract: No abstract text available
    Text: TS1220-600B SENSITIVE SCR FEATURES • It r m s = 12A ■ V drm /V rrm = 6 0 0 V < 200(i,A ■ HIGH It s m = 110A (tp = 10ms) ■ Ig t K DESCRIPTION The TS1220-600B is using a high performance TOPGLASS PNPN technology and is intended for applications requiring high surge capability (like


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    PDF TS1220-600B TS1220-600B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE D bb53R31 0030540 TOO • APX Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in


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    PDF bb53R31 BUK444-600B PINNING-SOT186 bb53T31 0D305l

    BUK657-600A

    Abstract: BUK657-600C 600B BUK657 BUK657-600B T0220AB buk657-600 Y485
    Text: N AMER P H I L I P S / D I S C R E T E 2SE D • 1^53=131 G O S O T I S 1 ■ PowerMOS transistor Fast Recovery Diode FET BUK657-600A BUK657-600B BUK657-600C •1- _ o a ~ j 5 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-eifect power transistor in a


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    PDF BUK657-600A BUK657-600B BUK657-600C BUK657 -600A -600B -600C 1E-04 1E-05 1E-06 BUK657-600A BUK657-600C 600B BUK657-600B T0220AB buk657-600 Y485

    11.0592mhz crystal oscillator

    Abstract: EN50065-1 1042U PLCC28 ST7536 ST7536CFN 712-12 7492 pin out diagram
    Text: Æ 7 SG S-THO M SO N ST7536 POWER LINE MODEM } • HALF DUPLEX SYNCHRONOUS FSK MODEM • Two programmable channels for 600bps data rate • Two programmable channels for 1200bps data rate ■ AUTOMATICALLY TUNED Rx AND Tx FILTERS ■ TX CARRIER FREQUENCIES SYNTHESIZED


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    PDF ST7536 600bps 1200bps 600bps) 1200bps) DH028/29 EN50065-1 PLCC28 ST7536CFN ST7536 11.0592mhz crystal oscillator 1042U PLCC28 ST7536CFN 712-12 7492 pin out diagram

    BUK437-600B

    Abstract: ATIC BUK437-600A
    Text: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 0020325 7 ■ PowerMOS transistor " BUK437-600A BUK437-600B T - 3 e? - 1S’ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF bbS3T31 0D2032S BUK437-600A BUK437-600B BUK437 -600A -600B OT-93; T-39-15 BUK437-600B ATIC BUK437-600A

    BUK454-600B

    Abstract: T0220AB t 326 Transistor
    Text: N AMER P H I L I P S / D I S C R E T E b^E D • □□3Dfc>3D TM2 ■ I APX b ¡35 3^31 Product Specification Philips Semiconductors BUK454-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.


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    PDF 0G30b3G BUK454-600B T0220AB BUK454-600B T0220AB t 326 Transistor