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    PTFA210301E Search Results

    PTFA210301E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA210301E Infineon Technologies 2100 MHz to 2200 MHz; Package: PG:H-30265-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 30.0 W; Supply Voltage: 28.0 V; Original PDF

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    A2103

    Abstract: No abstract text available
    Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA


    Original     		PDF PTFA210301E PTFA210301F 30-watt, PTFA210301F* A2103

    marking us capacitor pf l1

    Abstract: BCP56 LM7805 PTFA210301E infineon gold
    Text: PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110


    Original     		PDF PTFA210301E PTFA210301E 30-watt, marking us capacitor pf l1 BCP56 LM7805 infineon gold

    LM7805

    Abstract: PTFA210301E
    Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA


    Original     		PDF PTFA210301E PTFA210301F 30-watt, PTFA210301F* LM7805