Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PTFA191001E Search Results

    SF Impression Pixel

    PTFA191001E Price and Stock

    Infineon Technologies AG PTFA191001EV4XWSA1

    RF MOSFET LDMOS 30V H-36248-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA191001EV4XWSA1 Tray 50
    • 1 -
    • 10 -
    • 100 $78.0878
    • 1000 $78.0878
    • 10000 $78.0878
    		Buy Now

    Infineon Technologies AG PTFA191001EV4R250XTMA1

    RF MOSFET LDMOS 30V H-36248-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA191001EV4R250XTMA1 Reel 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $73.9104
    • 10000 $73.9104
    		Buy Now

    PTFA191001E Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA191001E Infineon Technologies 1800 MHz to 2000 MHz; Package: PG: H-36248-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,930.0 - 1,990.0 MHz; P1dB (typ): 100.0 W; Supply Voltage: 28.0 V Original PDF
    PTFA191001EV4 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-36248-2 Original PDF
    PTFA191001EV4R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-36248-2 Original PDF
    PTFA191001EV4R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-36248-2 Original PDF
    PTFA191001EV4XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-36248-2 Original PDF

    PTFA191001E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ssy 1920

    Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
    Text: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,


    Original     		PTFA191001E PTFA191001F PTFA191001E PTFA191001F 100-watt, IS-95 CDMA2000 H-36248-2 ssy 1920 LM 2931 AT 05 BCP56 LM7805 PDF

    ssy 1920

    Abstract: LM7805 SSY C5
    Text: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and


    Original     		PTFA191001E PTFA191001F 100-watt, IS-95 CDMA2000 PTFA191001F* ssy 1920 LM7805 SSY C5 PDF

    ssy 1920

    Abstract: No abstract text available
    Text: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,


    Original     		PTFA191001E PTFA191001F PTFA191001E PTFA191001F 100-watt, IS-95 CDMA2000 H-36248-2 ssy 1920 PDF

    ssy 1920

    Abstract: LM7805
    Text: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and


    Original     		PTFA191001E PTFA191001F 100-watt, IS-95 CDMA2000 PTFA191001F* ssy 1920 LM7805 PDF

    ssy 1920

    Abstract: No abstract text available
    Text: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized


    Original     		PTFA191001E PTFA191001F 100-watt, IS-95 CDMA2000 PTFA191001F* 20dangerous ssy 1920 PDF

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E PDF

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 PDF