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    PB 05 TRANSISTOR Search Results

    PB 05 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    PB 05 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PT008-05

    Abstract: PT008
    Text: epitex Opto-Device & Custom LED PHOTO-DIODE PT008-05 Lead Pb Free Product RoHS compliant PT008-05 mold type Phototransistor PT008-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.6*0.6mm active area mounted


    Original     		PDF PT008-05 PT008-05 1000Lx PT008

    PT010-05

    Abstract: lens photodiode phototransistor
    Text: epitex Opto-Device & Custom LED PHOTO-DIODE PT010-05 Lead Pb Free Product RoHS compliant PT010-05 mold type Phototransistor PT010-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.8*0.8mm active area mounted


    Original     		PDF PT010-05 PT010-05 1000Lx lens photodiode phototransistor

    SPP2341

    Abstract: MOSFET SPP2341S23RGB 41YW SPP2341S23RG P-Channel MOSFET 12V SOT 23 NO32
    Text: SPP2341 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP2341 SPP2341 -20V/-3 -20V/-2 MOSFET SPP2341S23RGB 41YW SPP2341S23RG P-Channel MOSFET 12V SOT 23 NO32

    SPN2302

    Abstract: MOSFET SPN2302S23RG sot 26 N-Channel MOSFET
    Text: SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN2302 SPN2302 MOSFET SPN2302S23RG sot 26 N-Channel MOSFET

    SPP3401

    Abstract: MOSFET SPP3401S23RG a1yw SPP3401S23RGB
    Text: SPP3401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP3401 SPP3401 -30V/-4 -30V/-3 MOSFET SPP3401S23RG a1yw SPP3401S23RGB

    SPN09T10T252RG

    Abstract: n-channel mosfet transistor low power SPN09T10 static characteristics of mosfet TO-252 N-channel MOSFET 100V 8A N-Channel MOSFET
    Text: SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN09T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN09T10 has been designed specifically to improve the overall


    Original     		PDF SPN09T10 SPN09T10 00V/8A O-252 O-251 O-252 SPN09T10T252RG n-channel mosfet transistor low power static characteristics of mosfet TO-252 N-channel MOSFET 100V 8A N-Channel MOSFET

    SPN1012

    Abstract: 20V n-Channel Power MOSFET SC-89 SPN1012S52RG mosfet gate source voltage 20v SPN1012S52RGB
    Text: SPN1012 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPN1012 SPN1012 20V n-Channel Power MOSFET SC-89 SPN1012S52RG mosfet gate source voltage 20v SPN1012S52RGB

    07 MARKING CODE MOSFET

    Abstract: SPN3400 SPN3400S23RG
    Text: SPN3400 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN3400 SPN3400 07 MARKING CODE MOSFET SPN3400S23RG

    SPN1026

    Abstract: SPN1026S56RG Dual N-Channel
    Text: SPN1026 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while


    Original     		PDF SPN1026 SPN1026 320mA SPN1026S56RG Dual N-Channel

    SPN4850

    Abstract: No abstract text available
    Text: SPN4850 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4850 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN4850 SPN4850

    SPN1024

    Abstract: MARKING 4A sot-563 sot-563 MOSFET D1 power mosfet 5a 20v spn1024s56
    Text: SPN1024 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1024 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPN1024 SPN1024 MARKING 4A sot-563 sot-563 MOSFET D1 power mosfet 5a 20v spn1024s56

    SOP-8P

    Abstract: SPP9434
    Text: SPP9434 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP9434 SPP9434 -20V/-7 -20V/-5 SOP-8P

    SPN6561

    Abstract: SOT-23-6L sot 26 Dual N-Channel MOSFET SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET sot 26 N-Channel MOSFET Z/sot 26 Dual N-Channel MOSFET
    Text: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPN6561 SPN6561 SOT-23-6L sot 26 Dual N-Channel MOSFET SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET sot 26 N-Channel MOSFET Z/sot 26 Dual N-Channel MOSFET

    Transistor Mosfet N-Ch 30V

    Abstract: N and P MOSFET
    Text: SPC4539A N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4539A is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPC4539A SPC4539A Transistor Mosfet N-Ch 30V N and P MOSFET

    Untitled

    Abstract: No abstract text available
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS301 LS302 LS303 100MHz 250mW 500mW LS301ithic

    J201 Replacement

    Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
    Text: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current


    Original     		PDF IT130A IT130 IT131 IT132 250mW 500mW J201 Replacement JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"

    sot 26 Dual N-Channel MOSFET

    Abstract: 10mA JFET LS358
    Text: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C


    Original     		PDF LS358 250mW 500mW sot 26 Dual N-Channel MOSFET 10mA JFET

    jfet differential transistor

    Abstract: JFET 401 U402 N CHANNEL FET
    Text: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature


    Original     		PDF LS318 250mW 500mW LS318 jfet differential transistor JFET 401 U402 N CHANNEL FET

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


    Original     		PDF IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement"

    Current Regulator Diode

    Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS350 LS351 LS352 275MHz 250mW 500mW LS352 Current Regulator Diode J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    Untitled

    Abstract: No abstract text available
    Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current


    Original     		PDF IT120A IT120 IT121 IT122 250mW 500mW

    NEC C51A

    Abstract: nec inverter schematic F074 marking B007 marking B003 JH-04 UPB6101C
    Text: N É C ELECTRONICS INC 7H c D e | LiMH752S DD0Û110 1 NEC NEC Electronics Inc. T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced


    OCR Scan     		PDF iMH752S uPB6100 uPB6101 uPB6102 uPB6103 b457S55 /PB610 //PB6100 AIPB6101 AiPB6102 NEC C51A nec inverter schematic F074 marking B007 marking B003 JH-04 UPB6101C

    uPB6101C

    Abstract: NEC C51A N021C F010 nec inverter schematic nec lot code format T-42-11-05
    Text: N É C ELECTRONICS INC 7H D e | LiMH752S DD0Û110 1 NEC N E C Electronics Inc. c T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced


    OCR Scan     		PDF iMH752S uPB6100 uPB6101 uPB6102 uPB6103 b457S55 /PB610 //PB6100 AIPB6101 AiPB6102 uPB6101C NEC C51A N021C F010 nec inverter schematic nec lot code format T-42-11-05