Evaluation board
Abstract: R2C marking MARKING R2D SOT23 Marking R2E marking aac sot23-5 EP3001 GRM31CR70J106KA01L GRM31CR71A475KA01L LQH43CN2R2M03L R2E SOT23
Text: EP3001 Evaluation Board Manual DESCRIPTION This manual aims to illustrate how to use the EP3001 Evaluation Board “EP3001 EVB” . The EP3001 EVB is a constant-frequency buck regulator, using the EP3001, 1.5MHz, 600mA Synchronous Step-down Converter. The EP3001 EVB is available for input voltage range from 2.5V to
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EP3001
EP3001,
600mA
600mA
800mA
Evaluation board
R2C marking
MARKING R2D SOT23
Marking R2E
marking aac sot23-5
GRM31CR70J106KA01L
GRM31CR71A475KA01L
LQH43CN2R2M03L
R2E SOT23
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SPP3401
Abstract: SPP3401S23RG
Text: SPP3401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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SPP3401
SPP3401
-30V/-4
-30V/-3
SPP3401S23RG
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SPP3401
Abstract: MOSFET SPP3401S23RG a1yw SPP3401S23RGB
Text: SPP3401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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SPP3401
SPP3401
-30V/-4
-30V/-3
MOSFET
SPP3401S23RG
a1yw
SPP3401S23RGB
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SPP3401B
Abstract: MOSFET
Text: SPP3401B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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SPP3401B
SPP3401B
-30V/-4
-30V/-3
MOSFET
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