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SPN1012 Abstract: 20V n-Channel Power MOSFET SC-89 SPN1012S52RG mosfet gate source voltage 20v SPN1012S52RGB Text: SPN1012 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state	Original	PDF	SPN1012 SPN1012 20V n-Channel Power MOSFET SC-89 SPN1012S52RG mosfet gate source voltage 20v SPN1012S52RGB

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Abstract: 20V n-Channel Power MOSFET SC-89 SPN1012S52RG mosfet gate source voltage 20v SPN1012S52RGB
Text: SPN1012 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

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SPN1012 SPN1012 20V n-Channel Power MOSFET SC-89 SPN1012S52RG mosfet gate source voltage 20v SPN1012S52RGB