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    Diodes Incorporated DNLS350Y-13

    TRANS NPN 50V 3A SOT89-3
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    Diodes Incorporated DNLS350E-13

    TRANS NPN 50V 3A SOT223-3
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    Diodes Incorporated DPLS350E-13

    TRANS PNP 50V 3A SOT223-3
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    Diodes Incorporated ZLLS350TA

    DIODE SCHOTTKY 40V 380MA SOD523
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    Diodes Incorporated DPLS350Y-13

    TRANS PNP 50V 3A SOT89-3
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    DigiKey DPLS350Y-13 Cut Tape 3,788 1
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    Mouser Electronics DPLS350Y-13 1,929
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    LS350 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LS350 Linear Integrated Systems MONOLITHIC DUAL PNP TRANSISTOR Original PDF
    LS350-2 Linear Integrated Systems MONOLITHIC DUAL PNP TRANSISTORS Original PDF

    LS350 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Current Regulator Diode

    Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    LS350 LS351 LS352 275MHz 250mW 500mW LS352 Current Regulator Diode J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


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    LS350 LS350 275MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original
    LS350 LS350 275MHz PDF

    LS352

    Abstract: No abstract text available
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS FEATURES HIGH GAIN hFE 200 @ 10µA - 1mA TIGHT VBE MATCHING IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C unless otherwise stated IC Collector Current 10mA Maximum Temperatures


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    LS350 LS351 LS352 250mW 500mW OT-23 LS352: LS352 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original
    LS350 LS350 275MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original
    LS350 LS350 OT-23 275MHz OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original
    LS350 PDF

    ls352

    Abstract: LS351 ic 353 LS350
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    LS350 LS351 LS352 275MHz 250mW 500mW LS350: LS351 LS352: LS351: ls352 ic 353 PDF

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


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    IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement" PDF

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


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    LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310 PDF

    Ultra High Input Impedance N-Channel JFET Amplifier

    Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
    Text: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1


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    LS421, LS422, LS423, LS424, LS425, LS426 400mW Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23 PDF

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


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    LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A PDF

    "DUAL N-Channel JFET"

    Abstract: ultra low igss pA J176 equivalent
    Text: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


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    U/SST440 U/SST440 U/SST441 500mW "DUAL N-Channel JFET" ultra low igss pA J176 equivalent PDF

    FET U310

    Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
    Text: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW


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    U/J/SST308 350mW 500mW OT-23 FET U310 U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET PDF

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


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    LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel PDF

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


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    3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor PDF

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
    Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5


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    SD-SST210/214 SD210DE SD214DE SST210 SST214 N CHANNEL jfet Low Noise Audio Amplifier diode ZENER A8 P-Channel Depletion Mosfets N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener ultra FAST DMOS FET Switches sst210 sot-143 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    LS310 LS311 LS312 LS313 250MHz 250mW 500mW PDF

    diode ZENER A8

    Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns


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    SD5000/5001/5400/5401 SD5000/5400 diode ZENER A8 P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice PDF

    ultra low Ciss jfet

    Abstract: Photo Transistor d12 Dual N-Channel JFET 2n3955 transistor spice LS3954 J310 jfet ultra low igss pA ultra low igss pA mosfet transistor j201 transistor j112
    Text: LS3954A LS3954 LS3955 LS3956 LS3958 LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. LOW LEAKAGE IG = 20pA TYP. LOW NOISE en= 10nV/√Hz TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    LS3954A LS3954 LS3955 LS3956 LS3958 10nV/Hz 400mW ultra low Ciss jfet Photo Transistor d12 Dual N-Channel JFET 2n3955 transistor spice J310 jfet ultra low igss pA ultra low igss pA mosfet transistor j201 transistor j112 PDF

    J201 Replacement

    Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
    Text: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current


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    IT130A IT130 IT131 IT132 250mW 500mW J201 Replacement JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible" PDF

    ultra low igss pA

    Abstract: ultra low igss pA mosfet n channel
    Text: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


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    LS5301, PF5301 LF5301, PF5301, 2N5301 300mW ultra low igss pA ultra low igss pA mosfet n channel PDF

    Untitled

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS350 LS351 LS352 MONOLITHIC DUAL Linear Integrated Systems 'ËËËËËËËËËËUÈËËËËÊ TRANSISTORS FE A TU R E S HIGH GAIN hpE > 200 @ 10^A -1 mA TIGHT VBE MATCHING lVBE1-VBE2l = 0 2mV TYP 275M HzTYP. @ 1mA HIGH C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1


    OCR Scan
    LS350 LS351 LS352 LS35Q: LS352: PDF

    Untitled

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 275MHz TYP. @ 1mA C1 -65° to +200°C +150*0 26 X 29 MILS h FE 25 45 60 MIN. V Ic = 10jjA Emitter to Base Voltage 6.2 6.2 6.2 MIN. V Ie = 10mA Collector to Collector Voltage


    OCR Scan
    LS350 LS351 LS352 10nA-1mA 275MHz 250mW 500mW LS351 LS352 PDF