P2804ND5G
Abstract: SEM 2005 p2804 niko P2804N g1id
Text: NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free PRODUCT SUMMARY N-Channel 40 28mΩ 7A P-Channel -40 55mΩ -5.5A D2 G1 G2 S1 G : GATE D : DRAIN S : SOURCE S1 G1 ID D1/D2 RDS ON S2 G2 D1 V(BR)DSS S2
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P2804ND5G
O-252-5
Apr-18-2005
P2804ND5G
SEM 2005
p2804
niko
P2804N
g1id
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SEM 2004
Abstract: NIKO-SEM Niko Semiconductor P2804 P2804NV
Text: P2804NV N- & P-Channel Enhancement Mode Field Effect Transistor Preliminary NIKO-SEM SOP-8 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 40 28mΩ 7A P-Channel -40 65mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
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P2804NV
May-12-2004
SEM 2004
NIKO-SEM
Niko Semiconductor
P2804
P2804NV
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P2804NVG
Abstract: No abstract text available
Text: P2804NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 40 28mΩ 7A P-Channel -40 65mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
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P2804NVG
15Diode
AUG-19-2004
P2804NVG
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)
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ELM34604AA-N
ELM34604AA-N
P2804NVG
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)
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ELM34604AA-N
ELM34604AA-N
P2804NVG
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复合
Abstract: ELM34604AA
Text: 复合沟道 MOSFET ELM34604AA-N •概要 ■特点 ELM34604AA-N 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=40V P 沟道 ·Vds=-40V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-5A ·Rds on < 28mΩ(Vgs=10V) ·Rds(on) < 65mΩ(Vgs=-10V)
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ELM34604AA-N
P2804NVG
AUG-19-2004
复合
ELM34604AA
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复合
Abstract: ELM35601KA
Text: 复合沟道 MOSFET ELM35601KA-S •概要 ■特点 ELM35601KA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=40V P 沟道 ·Vds=-40V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-5.5A
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ELM35601KA-S
P2804ND5G
O-252-5
SEP-16-2005
复合
ELM35601KA
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P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG
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O-263
P45N02LSG
P45N03LTG
P75N02LSG
P75N02LTG
P0903BSG
P0903BTG
P3055LSG
P3055LTG
P50N03LSG
P70N02LDG
p0603bdg
P60N03LDG
PA102FDG
P2503NPG
P45N02LDG
P0603BD
P1703BDG
P0403BDG
P3004ND5G
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Untitled
Abstract: No abstract text available
Text: コンプリメンタリーパワー MOSFET ELM34604AA-N •概要 ■特長 ELM34604AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=7A
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ELM34604AA-N
P2804NVG
AUG-19-2004
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Untitled
Abstract: No abstract text available
Text: コンプリメンタリーパワー MOSFET ELM35601KA-S •概要 ■特長 ELM35601KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=7A
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ELM35601KA-S
P2804ND5G
O-252-5
SEP-16-2005
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P2804ND5G
Abstract: No abstract text available
Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)
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ELM35601KA-S
ELM35601KA-S
P2804ND5G
O-252-5
SEP-16-2005
P2804ND5G
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transistor 123 DL
Abstract: No abstract text available
Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)
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ELM35601KA-S
ELM35601KA-S
P2804ND5G
O-252-5
SEP-16-2005
transistor 123 DL
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