P2804NV Search Results

P2804NV Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P2804NV		Niko Semiconductor	N- and P-Channel Enhancement FET		Original	PDF
P2804NVG		Niko Semiconductor	N- & P-Channel Enhancement Mode Field Effect Transistor		Original	PDF
P2804NVG		Niko Semiconductor	N- and P-Channel Enhancement FET		Original	PDF

P2804NV Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SEM 2004 Abstract: NIKO-SEM Niko Semiconductor P2804 P2804NV Text: P2804NV N- & P-Channel Enhancement Mode Field Effect Transistor Preliminary NIKO-SEM SOP-8 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 40 28mΩ 7A P-Channel -40 65mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)	Original	P2804NV May-12-2004 SEM 2004 NIKO-SEM Niko Semiconductor P2804 P2804NV	PDF
P2804NVG Abstract: No abstract text available Text: P2804NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 40 28mΩ 7A P-Channel -40 65mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)	Original	P2804NVG 15Diode AUG-19-2004 P2804NVG	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)	Original	ELM34604AA-N ELM34604AA-N P2804NVG	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)	Original	ELM34604AA-N ELM34604AA-N P2804NVG	PDF
复合 Abstract: ELM34604AA Text: 复合沟道 MOSFET ELM34604AA-N •概要 ■特点 ELM34604AA-N 是低输入电容低工 N 沟道作电压、低导通电阻的大电流 MOSFET。 •Vds=40V P 沟道 ·Vds=-40V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-5A ·Rds on < 28mΩ(Vgs=10V) ·Rds(on) < 65mΩ(Vgs=-10V)	Original	ELM34604AA-N P2804NVG AUG-19-2004 复合 ELM34604AA	PDF
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G	PDF
Untitled Abstract: No abstract text available Text: コンプリメンタリーパワー MOSFET ELM34604AA-N •概要 ■特長 ELM34604AA-N は低入力容量 N チャンネル P チャンネル低電圧駆動、低オン抵抗という特・ Vds=40V 性を備えた大電流 MOSFET です。・ Id=7A	Original	ELM34604AA-N P2804NVG AUG-19-2004	PDF