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    P2103N Search Results

    P2103N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P2103NV Niko Semiconductor N- and P-Channel Enhancement FET Original PDF
    P2103NVG Niko Semiconductor N- & P-Channel Enhancement Mode Field Effect Transistor Original PDF

    P2103N Datasheets Context Search

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    P2103NVG

    Abstract: P2103NV p2103n P-Channel Enhancement Mode Field Effect Transistor
    Text: NIKO-SEM P2103NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PDF P2103NVG MAY-21-2004 P2103NVG P2103NV p2103n P-Channel Enhancement Mode Field Effect Transistor

    P2103NV

    Abstract: nikos p2103n niko-sem
    Text: NIKO-SEM P2103NV N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P2103NV OCT-22-2003 P2103NV nikos p2103n niko-sem

    P2103ND5G

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM35604KA-S •概要 ■特長 ELM35604KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=8.5A


    Original     		PDF ELM35604KA-S P2103ND5G O-252-5 Mar-01-2005 P2103ND5G

    复合

    Abstract: ELM35604KA P2103ND5G
    Text: 复合沟道 MOSFET ELM35604KA-S •概要 ■特点 ELM35604KA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=8.5A ·Id=-7A


    Original     		PDF ELM35604KA-S O-252-5 Mar-01-2005 P2103ND5G 复合 ELM35604KA P2103ND5G

    P2103ND5G

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)


    Original     		PDF ELM35604KA-S ELM35604KA-S P2103ND5G O-252-5 Mar-01-2005 P2103ND5G

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)


    Original     		PDF ELM35604KA-S ELM35604KA-S P2103ND5G O-252-5 Mar-01-2005

    复合

    Abstract: ELM34601AA
    Text: 复合沟道 MOSFET ELM34601AA-N •概要 ■特点 ELM34601AA-N 是低输入电容低工 作电压、低导通电阻的大电流 MOSFET。 N 沟道 •Vds=30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 21mΩ(Vgs=10V) ·Rds(on) < 35mΩ(Vgs=-10V)


    Original     		PDF ELM34601AA-N P2103NVG MAY-21-2004 复合 ELM34601AA

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34601AA-N •General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)


    Original     		PDF ELM34601AA-N ELM34601AA-N P2103NVG MAY-21-2004

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34601AA-N •General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)


    Original     		PDF ELM34601AA-N ELM34601AA-N P2103NVG MAY-21-2004

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM34601AA-N •概要 ■特長 ELM34601AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。


    Original     		PDF ELM34601AA-N P2103NVG MAY-21-2004