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Catalog Datasheet	MFG & Type	Document Tags	PDF
复合 Abstract: ELM34601AA Text: 复合沟道 MOSFET ELM34601AA-N •概要 ■特点 ELM34601AA-N 是低输入电容低工作电压、低导通电阻的大电流 MOSFET。 N 沟道 •Vds=30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 21mΩ(Vgs=10V) ·Rds(on) < 35mΩ(Vgs=-10V)	Original	ELM34601AA-N P2103NVG MAY-21-2004 复合 ELM34601AA	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM34601AA-N •General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)	Original	ELM34601AA-N ELM34601AA-N P2103NVG MAY-21-2004	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM34601AA-N •General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)	Original	ELM34601AA-N ELM34601AA-N P2103NVG MAY-21-2004	PDF
Untitled Abstract: No abstract text available Text: コンプリメンタリーパワー MOSFET ELM34601AA-N •概要 ■特長 ELM34601AA-N は低入力容量 N チャンネル P チャンネル低電圧駆動、低オン抵抗という特・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。	Original	ELM34601AA-N P2103NVG MAY-21-2004	PDF
Tr K 970 Abstract: DIODE 4d Text: Complementary MOSFET ELM34601AA-N • General D escription ■ Features ELM 34601AA-N uses advanced tre n c h technology to provide excellent Rds on and low gate charge. N -channel P-channel Vds=30V Id=7A Rds(on) < 21mQ(Vgs=10V) Rds(on) < 32mQ(Vgs=4.5V) Vds=-30V	OCR Scan	ELM34601AA-N ELM34601AA-N Tr K 970 DIODE 4d	PDF