P2103NVG Search Results

P2103NVG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P2103NVG		Niko Semiconductor	N- & P-Channel Enhancement Mode Field Effect Transistor		Original	PDF

P2103NVG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
P2103NVG Abstract: P2103NV p2103n P-Channel Enhancement Mode Field Effect Transistor Text: NIKO-SEM P2103NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)	Original	P2103NVG MAY-21-2004 P2103NVG P2103NV p2103n P-Channel Enhancement Mode Field Effect Transistor	PDF
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G	PDF
复合 Abstract: ELM34601AA Text: 复合沟道 MOSFET ELM34601AA-N •概要 ■特点 ELM34601AA-N 是低输入电容低工作电压、低导通电阻的大电流 MOSFET。 N 沟道 •Vds=30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 21mΩ(Vgs=10V) ·Rds(on) < 35mΩ(Vgs=-10V)	Original	ELM34601AA-N P2103NVG MAY-21-2004 复合 ELM34601AA	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM34601AA-N •General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)	Original	ELM34601AA-N ELM34601AA-N P2103NVG MAY-21-2004	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM34601AA-N •General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)	Original	ELM34601AA-N ELM34601AA-N P2103NVG MAY-21-2004	PDF
Untitled Abstract: No abstract text available Text: コンプリメンタリーパワー MOSFET ELM34601AA-N •概要 ■特長 ELM34601AA-N は低入力容量 N チャンネル P チャンネル低電圧駆動、低オン抵抗という特・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。	Original	ELM34601AA-N P2103NVG MAY-21-2004	PDF