N3856V
Abstract: n3856 tl431 and pc817 pin diagram of pc817 PIC PWM voltage mode pwm controler 2SC945 typical application PC817-4 pwm sop-8 2SC945
Text: NIKO-SEM Synchronous Rectification Controller N3856V SOP- 8 GENERAL DESCRIPTION FEATURES The N3856V is a low cost , high efficiency, full featured ,synchronous rectification controller that specifically designed for the synchronous rectification applications of the Flyback AC/DC
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N3856V
N3856V
1N4148
AUG-29-2003
n3856
tl431 and pc817
pin diagram of pc817
PIC PWM
voltage mode pwm controler
2SC945 typical application
PC817-4
pwm sop-8
2SC945
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P2003evg
Abstract: P2003EV P2003 p-Channel Logic Level Enhancement Mode Field Effect Transistor SOP 3.9 niko-sem Transistor 9A
Text: P-Channel Logic Level Enhancement NIKO-SEM P2003EVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 20mΩ -9A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P2003EVG
OCT-20-2004
P2003evg
P2003EV
P2003
p-Channel Logic Level Enhancement Mode
Field Effect Transistor
SOP 3.9
niko-sem
Transistor 9A
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P1203BS
Abstract: P1203B
Text: P1203BS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P1203BS
O-263
FEB-02-2004
P1203BS
P1203B
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P3056LD
Abstract: DIODE P3056LD niko P3056LD p3056LD NIKO
Text: P3056LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P3056LD
O-252
P3056LD"
FEB-04-Y02
P3056LD
DIODE P3056LD
niko P3056LD
p3056LD NIKO
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P2803NVG
Abstract: SEM 2005 niko-sem p2803nvg NIKO-SEM P2803 "Field Effect Transistor" Field Effect Transistor p2803n DSA0025594 P-CHANNEL
Text: NIKO-SEM P2803NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 27.5mΩ 7A P-Channel -30 34mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
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P2803NVG
JUL-25-2005
P2803NVG
SEM 2005
niko-sem
p2803nvg NIKO-SEM
P2803
"Field Effect Transistor"
Field Effect Transistor
p2803n
DSA0025594
P-CHANNEL
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SEM 2006
Abstract: P1308ATG transistor sem 2006
Text: P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 13mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P1308ATG
O-220
Jun-09-2006
SEM 2006
P1308ATG
transistor sem 2006
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P5506
Abstract: P5506BVG
Text: P5506BVG N-Channel Logic Level Enhancement NIKO-SEM SOP-8 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P5506BVG
SEP-30-2004
P5506
P5506BVG
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l1117 18
Abstract: l1117 1.2 L1117 L1117 33 l1117 g L1117-3.3 L1117-1.8 l111718 voltage regulator l1117 L1117-18
Text: NIKO-SEM 1A Fixed and Adjustable Low Dropout Linear Regulator LDO L1117 Series SOT-223, TO-252, TO-220,TO-263 GENERAL DESCRIPTION FEATURES The L1117 Series are positive and low dropout three-terminal voltage regulators with 1A output current capability. These devices
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L1117
OT-223,
O-252,
O-220
O-263
OT-223
O-252
l1117 18
l1117 1.2
L1117 33
l1117 g
L1117-3.3
L1117-1.8
l111718
voltage regulator l1117
L1117-18
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P06P03LDG
Abstract: nikos P06P03 Field Effect Transistor p-Channel Logic Level Enhancement Mode niko-sem TO252 Niko Semiconductor sm 17 35 tc P06P03LD
Text: P06P03LDG P-Channel Logic Level Enhancement NIKO-SEM Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P06P03LDG
O-252
AUG-17-2004
P06P03LDG
nikos
P06P03
Field Effect Transistor
p-Channel Logic Level Enhancement Mode
niko-sem
TO252
Niko Semiconductor
sm 17 35 tc
P06P03LD
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P5506BDG
Abstract: P5506 niko-sem field effect transistor AUG-19-2004
Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P5506BDG TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 10A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P5506BDG
O-252
AUG-19-2004
P5506BDG
P5506
niko-sem
field effect transistor
AUG-19-2004
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P2503BDG
Abstract: P2503BD nikos EQUIVALENT* P2503 P2503 niko-sem
Text: NIKO-SEM P2503BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 12A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P2503BDG
O-252
SEP-30-2004
P2503BDG
P2503BD
nikos
EQUIVALENT* P2503
P2503
niko-sem
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Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM32401LA-S •General description ■Features ELM32401LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-60V Id=-7A Rds(on) < 90mΩ (Vgs=-10V) Rds(on) < 135mΩ (Vgs=-4.5V)
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ELM32401LA-S
ELM32401LA-S
O-252
OCT-21-2004
P9006EDG
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)
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ELM34608AA-N
ELM34608AA-N
P5806NVG
Oct-01-2004
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P75N02LDG
Abstract: P75N02
Text: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)
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ELM32428LA-S
ELM32428LA-S
P75N02LDG
O-252
Jun-11-2005
P75N02LDG
P75N02
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ELM36405EA
Abstract: No abstract text available
Text: 单 P 沟道 MOSFET ELM36405EA-S •概要 ■特点 ELM36405EA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-5A ·Rds on < 44mΩ (Vgs=-4.5V) ·Rds(on) < 70mΩ (Vgs=-2.5V) ·Rds(on) < 100mΩ (Vgs=-1.8V)
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ELM36405EA-S
Aug-03-2006
ELM36405EA
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ELM32428LA
Abstract: No abstract text available
Text: 单 N 沟道 MOSFET ELM32428LA-S •概要 ■特点 ELM32428LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=75A ·Rds on < 7mΩ (Vgs=10V) ·Rds(on) < 10mΩ (Vgs=4.5V) ■绝对最大额定值 项目
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ELM32428LA-S
P75N02LDG
O-252
Jun-11-2005
ELM32428LA
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ELM33401CA
Abstract: No abstract text available
Text: 单 P 沟道 MOSFET ELM33401CA-S •概要 ■特点 ELM33401CA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-3A ·Rds on < 85mΩ (Vgs=-10V) ·Rds(on) < 118mΩ (Vgs=-4.5V) ·Rds(on) < 215mΩ (Vgs=-2.5V)
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ELM33401CA-S
PA102FMG
OT-23
Mar-22-2006
ELM33401CA
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Untitled
Abstract: No abstract text available
Text: コンプリメンタリーパワー MOSFET ELM34608AA-N •概要 ■特長 ELM34608AA－N は 低 入 力 容 N チャンネル P チャンネル 量 低電圧駆動、 低オン抵抗とい ・ Vds=60V う特性を備えた大電流 MOSFET ・ Id=4.5A
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ELM34608AA-N
ELM34608AAï
P5806NVG
Oct-01-2004
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P5504EDG
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)
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ELM32403LA-S
ELM32403LA-S
P5504EDG
O-252
AUG-19-2004
P5504EDG
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ELM32418LA
Abstract: No abstract text available
Text: 单 N 沟道 MOSFET ELM32418LA-S •概要 ■特点 ELM32418LA-S 是 N 沟道低输入电容，低工作电压， •Vds=40V 低导通电阻的大电流 MOSFET。 ·Id=20A ·Rds on < 15mΩ (Vgs=10V) ·Rds(on) < 27mΩ (Vgs=7V) ■绝对最大额定值 项目
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ELM32418LA-S
P1504BDG
O-252
May-05-2006
ELM32418LA
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)
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ELM34802AA-N
ELM34802AA-N
P6803HVG
May-10-2006
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P60N03LDG
Abstract: P60N03LD
Text: シングル N チャンネル MOSFET ELM32422LA-S •概要 ■特長 ELM32422LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=60A ・ Rds on < 13.8mΩ (Vgs=10V) ・ Rds(on) < 17.8mΩ (Vgs=7V)
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ELM32422LA-S
P60N03LDG
O-252
OCT-27-2005
ModeELM32422LA-S
P60N03LDG
P60N03LD
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Untitled
Abstract: No abstract text available
Text: シングル P チャンネル MOSFET ELM34V555A-N •概要 ■特長 ELM34V555A-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-6A ・ Rds on < 28mΩ (Vgs=-10V) ・ Rds(on) < 45mΩ (Vgs=-4.5V)
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ELM34V555A-N
E-29-3
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ELM34402AA
Abstract: P2003b p2003bvg
Text: 单 N 沟道 MOSFET ELM34402AA-N •概要 ■特点 ELM34402AA-N 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=8A ·Rds on < 20mΩ (Vgs=10V) ·Rds(on) < 32mΩ (Vgs=4.5V) ■绝对最大额定值 项目
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ELM34402AA-N
P2003BVG
JUL-25-2005
ELM34402AA
P2003b
p2003bvg
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