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    P-CHANNEL RF AMPLIFIER Search Results

    P-CHANNEL RF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    P-CHANNEL RF AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ARF301

    Abstract: No abstract text available
    Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


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    ARF301 45MHz ARF301 45MHz. ARF300 micnotes/1810 PDF

    ARF301

    Abstract: "RF MOSFET" 300W ARF300
    Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


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    ARF301 45MHz ARF301 45MHz. ARF300 "RF MOSFET" 300W PDF

    Untitled

    Abstract: No abstract text available
    Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


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    ARF301 45MHz ARF301 45MHz. ARF300 PDF

    SELF vk200

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER


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    MRF134 68-ohm AN215A SELF vk200 PDF

    Untitled

    Abstract: No abstract text available
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


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    ARF300 45MHz ARF300 45MHz. ARF301 Rating-4948 micnotes/1810 PDF

    Untitled

    Abstract: No abstract text available
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


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    ARF300 45MHz ARF300 45MHz. ARF301 micnotes/1810 PDF

    4948

    Abstract: ARF300 ARF301 50VDSS
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


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    ARF300 45MHz ARF300 45MHz. ARF301 4948 50VDSS PDF

    4948

    Abstract: ARF300 ARF301 class E power amplifier 13.56 300w class ab amplifier microsemi application note
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


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    ARF300 45MHz ARF300 45MHz. ARF301 micnotes/1810 4948 class E power amplifier 13.56 300w class ab amplifier microsemi application note PDF

    136y

    Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up


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    MRF136 MRF136Y MRF136Y AN215A DL110 136y 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068 PDF

    MRF161

    Abstract: J141 mosfet fet j141
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF161 The RF MOSFET Line 5.0 W 2 .0 -4 0 0 MHz N-CHANNEL MOS BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR . . . designed fo r w id e b a n d large-signal a m p lifie r and o scillato r


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    MRF161 MRF161, MRF161 J141 mosfet fet j141 PDF

    RF MOSFETs

    Abstract: "RF MOSFETs"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF173* M RF173CQ The RF MOSFET Line RF P o w er Field E ffe c t Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 200 MHz


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    RF173* RF173CQ MRF173/CQ. AN721, MRF173 MRF173CQ RF MOSFETs "RF MOSFETs" PDF

    ferroxcube toroids

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F175G V M R F175G U The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push


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    MRF175GV MRF175GU MRF175G MRF176 MRF175GV MRF175GU ferroxcube toroids PDF

    749 MOSFET TRANSISTOR motorola

    Abstract: RF154 dss125
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF154 The RF MOSFET Line RF P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode MOSFET 600 W, 50 V. 80 MHz N-CHANNEL BROADBAND RF POWER MOSFET . . . designed prim arily for linear large*signal output stages in the 2-100 MHz frequency range.


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    RF154 749 MOSFET TRANSISTOR motorola RF154 dss125 PDF

    MRF162

    Abstract: motorola TE 901 Triode rs 733 P011t
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF162 The RF MOSFET Line 15 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r a p p lic a ­


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    MRF162 MRF162, MRF162 AN-215A motorola TE 901 Triode rs 733 P011t PDF

    S3 TRIO 64

    Abstract: AY 5 4007 0062g GS 069 HF
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF136 MRF136Y The RF M OSFET Line RF P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode M OSFETs 15 W, 30 W 2-400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed fo r w id e b a n d large-signal a m p lifie r and o scilla to r app licatio n s in the 2 to


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    MRF136 MRF136Y MRF136 MRF136Y S3 TRIO 64 AY 5 4007 0062g GS 069 HF PDF

    n-channel enhancement mode vmos power fet

    Abstract: DV1201K
    Text: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications


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    DV1201K DV1201K n-channel enhancement mode vmos power fet PDF

    J141 mosfet

    Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance


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    MRF161, MRF161 AN215A J141 mosfet MRF-161 fet j141 2191F SELF vk200 k 575 PDF

    BATWING sop-16

    Abstract: 990520
    Text: RF RF2360 Preliminary MICRO‘DEVICES LINEAR GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s Laser Diode Driver • Cable Modems Return Channel Amplifier • Broadband Gain Blocks Base Stations LINEAR CATV AMPLIFIERS • CATV Distribution Amplifiers


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    RF2360 RF2360 OP-16 1000MHz, RF2360PCBA 500MHz BATWING sop-16 990520 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .


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    3SK131 PDF

    2n5247

    Abstract: fairchild top marking Package Marking Information Fairchild semiconductor marking information marking code fairchild fairchild marking code
    Text: Product Folder - Fairchild P/N 2N5247 - N-Channel RF Amplifier Advanced Search Google Search PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD Related Links 2N5247


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    2N5247 2N5247 com/pf/2N/2N5247 html01/05/2005 fairchild top marking Package Marking Information Fairchild semiconductor marking information marking code fairchild fairchild marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: RF RF2320 Preliminary MICRO‘DEVICES LINEAR GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s Laser Diode Driver • Cable Modems Return Channel Amplifier • Broadband Gain Blocks Base Stations LINEAR CATV A M P L IFIE R S • CATV Distribution Amplifiers


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    RF2320 RF2320 OP-16 1000MHz, 1000MHz PDF

    15J02

    Abstract: 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5015 Advance Information The RF MOSFET Line M o to ro la P re fe rre d D ev ice RF P o w er Field E ffe c t T ransistor N-Channei Enhancement-Mode 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequen­


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    F5015 RF5015 AN215A, MRF5015 15J02 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015 PDF

    J300

    Abstract: J300_D26Z fairchild marking codes fairchild MARKING MY J300D marking code fairchild
    Text: Product Folder - Fairchild P/N J300 - N-Channel RF Amplifier Advanced Search Google Search PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD Related Links J300 Request samples


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    com/pf/J3/J300 J300 J300_D26Z fairchild marking codes fairchild MARKING MY J300D marking code fairchild PDF

    marking code fairchild

    Abstract: fairchild date code amplifier marking code a DATE CODE FAIRCHILD
    Text: Product Folder - Fairchild P/N PN4416 - N-Channel RF Amplifier Careers | Sitemap | Home Go DATASHEETS, SAMPLES, BUY TECHNICAL INFORMATION APPLICATIONS DESIGN CENTER SUPPORT COMPANY INVESTORS MY FAIRCHILD Home >> Find products >> Related Links PN4416 Request samples


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    PN4416 PN4416 com/pf/PN/PN4416 marking code fairchild fairchild date code amplifier marking code a DATE CODE FAIRCHILD PDF