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    ARF301 Price and Stock

    INA Bearings ZARF30105-TV-A

    Needle Roller/Axial Cylindrical RB, 30mm ID, 105mm OD, 66mm Width | INA Bearings (Schaeffler) ZARF30105-TV-A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ZARF30105-TV-A Bulk 2 Weeks 1
    • 1 $3484.58
    • 10 $3484.58
    • 100 $3484.58
    • 1000 $3484.58
    • 10000 $3484.58
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    INA Bearings ZARF30105-L-TV-A

    Needle Roller/Axial Cylindrical RB, 30mm ID, 105mm OD, 82mm Width | INA Bearings (Schaeffler) ZARF30105-L-TV-A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ZARF30105-L-TV-A Bulk 2 Weeks 1
    • 1 $3544.29
    • 10 $3544.29
    • 100 $3544.29
    • 1000 $3544.29
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    Harwin F30-10008045R

    Board to Board & Mezzanine Connectors FLECTO 0.8mm pitch Female 80 way Signal (6.80mm)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI F30-10008045R Reel 1,000 500
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    • 1000 $3.14
    • 10000 $2.92
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    Harwin F30-10106045R

    Board to Board & Mezzanine Connectors FLECTO 0.8mm pitch Female 60 way Signal (7.80mm)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI F30-10106045R Reel 800 400
    • 1 -
    • 10 -
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    • 1000 $2.44
    • 10000 $2.23
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    Harwin F30-10108045R

    Board to Board & Mezzanine Connectors FLECTO 0.8mm pitch Female 80 way Signal (7.80mm)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI F30-10108045R Reel 800 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.92
    • 10000 $2.54
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    Find more ARF301 price and stock on Findchips.com

    ARF301 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ARF301 Microsemi RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 125; BVDSS (V): 500; RqJC (°C/Watt): 0.15; Case Style: T-11; COO: C-E Original PDF

    ARF301 Datasheets Context Search

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    ARF301

    Abstract: "RF MOSFET" 300W ARF300
    Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


    Original     		PDF ARF301 45MHz ARF301 45MHz. ARF300 "RF MOSFET" 300W

    Untitled

    Abstract: No abstract text available
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


    Original     		PDF ARF300 45MHz ARF300 45MHz. ARF301 micnotes/1810

    4948

    Abstract: ARF300 ARF301 50VDSS
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


    Original     		PDF ARF300 45MHz ARF300 45MHz. ARF301 4948 50VDSS

    ARF300

    Abstract: ARF301 250nH 390PF 2.5 160V 431nH
    Text: Application Note 1808 April 2010 ARF300 – ARF301 In N-N and N-P Half Bridge RF Generators with Pulse and Sine Drive George J. Krausse Microsemi Corp. RF Power Products Group 405 SW Columbia St. Bend, OR 97702 USA gkrausse@microsemi.com and Richard Frey, P.E. K4XU


    Original     		PDF ARF300 ARF301 ARF300 ARF301 250nH 390PF 2.5 160V 431nH

    4948

    Abstract: ARF300 ARF301 class E power amplifier 13.56 300w class ab amplifier microsemi application note
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


    Original     		PDF ARF300 45MHz ARF300 45MHz. ARF301 micnotes/1810 4948 class E power amplifier 13.56 300w class ab amplifier microsemi application note

    ARF301

    Abstract: No abstract text available
    Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


    Original     		PDF ARF301 45MHz ARF301 45MHz. ARF300 micnotes/1810

    Untitled

    Abstract: No abstract text available
    Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


    Original     		PDF ARF300 45MHz ARF300 45MHz. ARF301 Rating-4948 micnotes/1810

    Untitled

    Abstract: No abstract text available
    Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


    Original     		PDF ARF301 45MHz ARF301 45MHz. ARF300

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter