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    MRF175GV Search Results

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    MRF175GV Price and Stock

    MACOM MRF175GV

    RF MOSFET 28V 375-04
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF175GV Tray 10
    • 1 -
    • 10 $224.172
    • 100 $224.172
    • 1000 $224.172
    • 10000 $224.172
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    Mouser Electronics MRF175GV
    • 1 -
    • 10 $216.7
    • 100 $216.7
    • 1000 $216.7
    • 10000 $216.7
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    Verical MRF175GV 15 1
    • 1 $231.6
    • 10 $231.6
    • 100 $231.6
    • 1000 $231.6
    • 10000 $231.6
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    MRF175GV 4 1
    • 1 $231.6
    • 10 $231.6
    • 100 $231.6
    • 1000 $231.6
    • 10000 $231.6
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    Richardson RFPD MRF175GV 4 1
    • 1 $231.58
    • 10 $231.58
    • 100 $231.58
    • 1000 $231.58
    • 10000 $231.58
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    Chip1Stop MRF175GV 15
    • 1 $271
    • 10 $269
    • 100 $269
    • 1000 $269
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    MRF175GV 4
    • 1 $261
    • 10 $261
    • 100 $261
    • 1000 $261
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    MRF175GV Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF175GV Advanced Semiconductor RF POWER FIELD-EFFECT TRANSISTOR Original PDF
    MRF175GV M/A-COM 200 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FET Original PDF
    MRF175GV M/A-COM RF FETs, Discrete Semiconductor Products, FET RF 2N-CH 28V 100MA 375-04 Original PDF
    MRF175GV Motorola N-CHANNEL MOS BROADBAND RF POWER FETs Original PDF
    MRF175GV NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
    MRF175GV Tyco Electronics TRANS MOSFET N-CH 65V 26A 5P-218 Original PDF
    MRF175GV Unknown FET Data Book Scan PDF

    MRF175GV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: , L na. l£i±£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull


    Original     		PDF MRF175GU MRF175GV

    planar transformer theory

    Abstract: G10 zener diode AN211A MRF175GU MRF175GV VK200 25 ohm semirigid
    Text: Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original     		PDF MRF175GU/D MRF175GU MRF175GV planar transformer theory G10 zener diode AN211A MRF175GU MRF175GV VK200 25 ohm semirigid

    mrf175gv

    Abstract: No abstract text available
    Text: MRF175GV RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. MAXIMUM RATINGS ID 26 A VDSS 65 V PDISS 400 W @ TC = 25 C


    Original     		PDF MRF175GV MRF175GV

    MOSFET J220

    Abstract: planar transformer theory arco 404 MRF175GU 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A
    Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original     		PDF MRF175GU/D MRF175GU MRF175GV MRF175GU MRF175GU/D* MOSFET J220 planar transformer theory arco 404 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A

    "RF MOSFET"

    Abstract: mosfet HF amplifier MRF175GV AN211A MRF175GU MOSFET TEST SIMPLE Procedures
    Text: MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state


    Original     		PDF MRF175GU MRF175GV 200/150W, 500MHz, "RF MOSFET" mosfet HF amplifier MRF175GV AN211A MRF175GU MOSFET TEST SIMPLE Procedures

    VK200 INDUCTOR

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original     		PDF MRF175GU/D MRF175GV MRF175GU MRF175GU MRF175GV MRF175GU/D VK200 INDUCTOR Nippon capacitors

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    MRF648

    Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
    Text: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137


    Original     		PDF 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MRF648 TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


    Original     		PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


    Original     		PDF Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MRF140

    Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546
    Text: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips


    Original     		PDF BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF140 mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    mosfet te 2304

    Abstract: MRF175GU hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory MRF176
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan     		PDF MRF175GV MRF175GU MRF175G MRF176 MRF175GU MRF175GV mosfet te 2304 hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan     		PDF RF175GV MRF175GU MRF175G MRF176 MRF17SGU MRF175GV

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    0400X0

    Abstract: No abstract text available
    Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M RF175GV MRF175GU The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode . . . designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of


    OCR Scan     		PDF MRF175GV MRF175GU MRF175G MRF176 0400X0

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    J360

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power FSeld-Effect Transistors MRF175GU M RF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan     		PDF MRF175GV MRF175GU MRF175GU RF175GV MRF175G MRF175GV J360