3006S
Abstract: 10-6327-01
Text: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®
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FDMS3006SDC
FDMS3006SDC
3006S
10-6327-01
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FCH76N60
Abstract: No abstract text available
Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH76N60N
FCH76N60N
218nC)
FCH76N60
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fqt1n80
Abstract: No abstract text available
Text: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQT1N80TF
fqt1n80
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FDA20
Abstract: *20N50F
Text: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDA20N50
FDA20
*20N50F
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Untitled
Abstract: No abstract text available
Text: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has
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FDMA8878
FDMA8878
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driver injectors
Abstract: high side gate driver GTO FAN7083
Text: FAN7083_GF085 High Side Gate Driver with Reset Features Description • Qualified to AEC Q100 The FAN7083_GF085 is a high-side gate drive IC with reset input. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 600V. Fairchild's highvoltage process and common-mode noise cancellation technique provide stable operation in the high side driver under
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FAN7083
GF085
GF085
driver injectors
high side gate driver GTO
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FDPF4N60NZ
Abstract: No abstract text available
Text: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP4N60NZ
FDPF4N60NZ
FDPF4N60NZ
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Common rail piezo injector driver
Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or
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REFLECTIVE OBJECT SENSOR
Abstract: No abstract text available
Text: REFLECTIVE OBJECT SENSOR REFLECTIVE OBJECT SENSOR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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fsdh0165
Abstract: *DH0165 Fairchild SPS switch fairchild
Text: www.fairchildsemi.com FSDH0165 Fairchild Power Switch SPS Features Description • • • • • • • • • The FSDH0165 is specially designed for an off-line SMPS with minimal external components. The FSDH0165 is a monolithic high voltage power switching regulator that combine the
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FSDH0165
FSDH0165
*DH0165
Fairchild SPS
switch fairchild
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Untitled
Abstract: No abstract text available
Text: REFLECTIVE OBJECT SENSOR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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RMPA2450
Abstract: C4 MMIC HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz F245
Text: RMPA2450 2.4 to 2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Absolute Ratings Electrical Characteristics Note 4, At 25°C, Zo=50 Ohms, Unless Otherwise Noted The Fairchild RF RMPA2450 is a fully matched monolithic power amplifier in a surface
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RMPA2450
RMPA2450
50-Ohm
G654216
RMPA2450-TB)
C4 MMIC
HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz
F245
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Untitled
Abstract: No abstract text available
Text: MULTICOLOR BARGRAPH DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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Abstract: No abstract text available
Text: 0.7" 5 X 7 DOT MATRIX DISPLAY DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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fairchild
Abstract: No abstract text available
Text: HERMETIC SILICON PHOTODARLINGTON DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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Untitled
Abstract: No abstract text available
Text: FSFR-Series / FSFR2100 Fairchild Power Switch FPS for Half-Bridge Resonant Converter Features Description FSFR-series is a highly integrated power switch family specially designed for high-efficiency half-bridge resonant converters. Offering everything necessary to
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FSFR2100
120ns)
350ns)
300kHz
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KA1H0265
Abstract: KA1H0265R KA1H0265R-TU KA1H0265R-YDTU KA1M0265R KA1M0265R-TU KA1M0265R-YDTU
Text: www.fairchildsemi.com KA1M0265R/KA1H0265R Fairchild Power Switch FPS Features Description • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of
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KA1M0265R/KA1H0265R
KA1H0265
KA1H0265R
KA1H0265R-TU
KA1H0265R-YDTU
KA1M0265R
KA1M0265R-TU
KA1M0265R-YDTU
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fairchild optocoupler
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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NDS9955
Abstract: SOIC-16
Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDS9955
OT-23
NDS9955
SOIC-16
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com KA2S0680B Fairchild Power Switch SPS Features Description • • • • • • • • • The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM Controller IC. PWM controller features integrated fixed oscillator,
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FSDH0165
Abstract: No abstract text available
Text: www.fairchildsemi.com FSDH0165 Fairchild Power Switch FPS Features Description • • • • • • • • • • The FSDH0165 is specially designed for an off-line SMPS with minimal external components. The FSDH0165 is a monolithic high voltage power switching regulator that combine the
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FSDH0165
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NDS9936
Abstract: No abstract text available
Text: February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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NDS9936
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Untitled
Abstract: No abstract text available
Text: DS3680 QUAD TELEPHONE RELAY DRIVER SLRS014C - MARCH 1986 - REVISED SEPTEMBER 1995 Designed for -52-V Battery Operation D OR N PACKAGE TOP VIEW 50-mA Output Current Capability Input Compatible With TTL and CMOS Direct Replacement for National DS3680 and Fairchild mA3680
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DS3680
SLRS014C
-52-V
50-mA
mA3680
SLRS014C-MARCH
7526S
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