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    Amphenol Corporation HPG36P14SVP011T

    Standard Card Edge Connectors 36P+14S,Vertical press fit EnergyEdge X-treme
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    Avnet Asia HPG36P14SVP011T 14 Weeks 308
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    Amphenol Communications Solutions HPG36P14SVP011T

    36P+14S, vertical Press Fit Energyedge X-Treme / |Amphenol Communications Solutions HPG36P14SVP011T
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    Newark HPG36P14SVP011T Bulk 3,080
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    P011T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MRF162

    Abstract: motorola TE 901 Triode rs 733 P011t
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF162 The RF MOSFET Line 15 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r a p p lic a ­


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    MRF162 MRF162, MRF162 AN-215A motorola TE 901 Triode rs 733 P011t PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


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    plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic PDF

    IU 1047

    Abstract: transistor 1005 oj
    Text: V M fcC Q M m an A M P com pany Wireless Bipolar Power Transistor, 2W 1 .7 8 -1 .9 0 GHz PH1819-2 744 _ Features • • • • • • bL.D ;i4 Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd 1MD at 2 Watts PKP Class A: +43 dBm Typ 3rd Order Intercept Point


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    PH1819-2 IU 1047 transistor 1005 oj PDF