to-247 to-220 to-3p
Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
Text: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective
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-100V
-500V
IXTA52P10P
FQB34P10
IXTA52P10P
-100V,
O-263
to-247 to-220 to-3p
IXTA36P15P
IXTN40P50P
IXTQ52P10P
sot-227 footprint
IXTA10P50P
ixtq
IXTH10P50
IXTH10P50P
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p-CHANNEL POWER MOSFET 600v
Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take
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-600v
-150V
p-CHANNEL POWER MOSFET 600v
IXTH20P50P
IXTP28P065T
014 IR MOSFET Transistor
P channel MOSFET 10A
ixtq
IXTA36P15P
IXTA76P10T
IXTH16P60P
IXTK32P60P
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IRLML6402TRPBF
Abstract: IRF7404TRPB TSSOP-6 IRLML6302TRPBF IRF7240TRPBF IRLML6401TRPBF TSSOP6 package IRFR5305PBF IRF5210STRLPBF irf7416trpbf
Text: 1964-2012:QuarkCatalogTempNew 9/18/12 3:26 PM Page 1964 Power MOSFETs Power MOSFETs, P Channel RoHS SO-8 D2-PAK TSSOP-6 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 AUTOMATION & CONTROL POWER TO-220AB I-PAK P Channel, –40 Volt VDSS P Channel, –12 Volt VDSS
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O-220AB
O-247AC
IRLML6401TRPBF
IRF7329PBF*
IRF7329TRPBF
IRF7420PBF
IRF7410PBF
IRF7410TRPBF
IRF7220PBF
IRF7220TRPBF
IRLML6402TRPBF
IRF7404TRPB
TSSOP-6
IRLML6302TRPBF
IRF7240TRPBF
TSSOP6 package
IRFR5305PBF
IRF5210STRLPBF
irf7416trpbf
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .
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OT-363
CJ7252KDW
OT-363
2N7002K
CJ502K
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IRF95
Abstract: IRF9510 p channel mosfet 100v TA17541
Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
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IRF95
O220AB
IRF9510
IRF95
IRF9510
p channel mosfet 100v
TA17541
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TC227
Abstract: No abstract text available
Text: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
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IRFR9220,
IRFU9220
TA17502.
TC227
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Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
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SiA519EDJ
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
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SiA519EDJ
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
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SiA519EDJ
SC-70-6
SiA533EDJ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified
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IRF9530,
RF1S9530SM
IRF95
530SM
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
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Untitled
Abstract: No abstract text available
Text: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 5 1 .0 5 7 .0 2 8 .0 1 0 .0 T Y P ø 4 .2 5 2 P O S N FEATURES 7 .0 • P - CHANNEL POWER MOSFETS 6 .3 5 T Y P • N - CHANNEL POWER MOSFETS
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LC32016
LC32020
300ms
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D15P05
Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
Text: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using
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RFD15
P05SM,
RFP15
RFD15P05,
RFD15P05SM,
RFP15P05
1e-30
15e-4
47e-3
D15P05
RFP15P05
RFD15P05
RFD15P05SM
TB334
d15p0
rfd15
D15p05 harris
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RS507
Abstract: irfu9220 IRFR9110 IRFR91109A IRFU9110 TA17541 TB334 TC227
Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power
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IRFR9110,
IRFU9110
RS507
irfu9220
IRFR9110
IRFR91109A
IRFU9110
TA17541
TB334
TC227
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IRF9530
Abstract: dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF9530,
RF1S9530SM
TA17511.
IRF9530
dc motor 9v
DATA SHEET IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
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IRF9640 equivalent
Abstract: irf9640 pdf switch IRF9640 transistor IRF9640 datasheet irf9640 mosfet RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Text: IRF9640, RF1S9640SM Data Sheet 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF9640,
RF1S9640SM
TA17522.
IRF9640 equivalent
irf9640 pdf switch
IRF9640
transistor IRF9640
datasheet irf9640 mosfet
RF1S9640
RF1S9640SM
RF1S9640SM9A
TA17522
TB334
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p12p10
Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851
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2N6804
2N6849
2N6851
2N6895
2N6896
2N6897
2N6898
IRF9130,
IRF9131,
IRF9132,
p12p10
IRF9530* p-channel power MOSFET
Power MOSFETs
Field-Effect Transistors
IRFP9140/P9141
irf9640 mosfet
IRF9530 P-channel power
p-channel
irfp9240
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100V 60A Mosfet
Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .
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IRFU9110,
IRFR9110
IRFU9120,
IRFR9120
IRFR9220,
IRFU9220
RFD8P06E,
RFD8P06ESM,
RFP8P06E
RFD15P05,
100V 60A Mosfet
50V 60A MOSFET
P-Channel 200V MOSFET
MOSFET ESD Rated
P-Channel
451 MOSFET
Pchannel
15a 50v p-channel mosfet
P-Channel 60V MOSFET
P-Channel Enhancement-Mode
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Untitled
Abstract: No abstract text available
Text: IRF9530, RF1S9530SM Semiconductor A p ril 1999 D ata S h eet -12A, -100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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PDF
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IRF9530,
RF1S9530SM
-100V,
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Untitled
Abstract: No abstract text available
Text: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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PDF
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IRF9630,
RF1S9630SM
-200V,
-200V
|
Untitled
Abstract: No abstract text available
Text: IRF9540, RF1S9540SM S e m iconductor Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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PDF
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IRF9540,
RF1S9540SM
-100V,
-100V
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Power MOSFETs
Abstract: p-channel mosfet p-channel 8a RFD8P05SM rfp12p10 30V 60A power p MOSFET 15a 50v p-channel mosfet
Text: i n t e r cil P-Channel Standard Gate _ Power MOSFETs | I m P ow er M O SFE T P ro d u cts PAGE P-Channel Test Circuits and W avefo rm s.
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PDF
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RFD15P05,
RFD15P05SM,
RFP15P05
RFD15P06,
RFD15P06SM,
RFP15P06
RFD8P05,
RFD8P05SM,
RFP8P05
RFD8P06E,
Power MOSFETs
p-channel
mosfet p-channel 8a
RFD8P05SM
rfp12p10
30V 60A power p MOSFET
15a 50v p-channel mosfet
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buz906dp
Abstract: No abstract text available
Text: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING
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PDF
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BUZ905DP
BUZ906DP
BUZ900DP
BUZ901DP
buz906dp
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d8p05
Abstract: No abstract text available
Text: P *3 3 S RFD8P05, RFD8P05SM, RFP8P05 -8A, -50V, 0.300 Ohm, P-Channel Power MOSFETs July 1998 Description Features -8A, -50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,
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OCR Scan
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PDF
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RFD8P05,
RFD8P05SM,
RFP8P05
developmenta00
AN7254
AN7260.
d8p05
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J50 mosfet
Abstract: No abstract text available
Text: OM913QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE P-CHANNEL 100V. 10 Am p, P-Channel, Radiation Hardened Power MOSFET In A H erm etic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package
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PDF
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OM913QSTC
1000K
OM9130S
O-257AA
J50 mosfet
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