IRFR91109A Search Results

IRFR91109A Price and Stock

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Rochester Electronics LLC IRFR91109A P-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR91109A	Bulk			761	1 - 10 - 100 - 1000 $0.39 10000 $0.39	Buy Now
Harris Semiconductor IRFR91109A 3.1A,100V, AVALANCHE RATED, P-Channel ENHANCEMENT-MODE POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IRFR91109A		2,500		1	1 $0.3792 10 $0.3792 100 $0.3564 1000 $0.3223 10000 $0.3223	Buy Now

IRFR91109A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFR91109A		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

IRFR91109A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFR9110 Abstract: irfu9110 irfu9220 IRFR91109A TA17541 TB334 TC227 Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power	Original	IRFR9110, IRFU9110 IRFR9110 irfu9110 irfu9220 IRFR91109A TA17541 TB334 TC227	PDF
irfu9220 Abstract: irfu9110 la 4001 IRFR9110 IRFR91109A TA17541 TB334 Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power	Original	IRFR9110, IRFU9110 irfu9220 irfu9110 la 4001 IRFR9110 IRFR91109A TA17541 TB334	PDF
RS507 Abstract: irfu9220 IRFR9110 IRFR91109A IRFU9110 TA17541 TB334 TC227 Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power	Original	IRFR9110, IRFU9110 RS507 irfu9220 IRFR9110 IRFR91109A IRFU9110 TA17541 TB334 TC227	PDF
IF9110 Abstract: IRFR9110 IRFR91109A IRFU9110 TA17541 Text: IRFU9110, IRFR9110 S E M I C O N D U C T O R 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs January 1996 Features Packaging JEDEC TO-251AA • 3.1A, 100V • rDS ON = 1.200Ω • Temperature Compensating PSPICE Model SOURCE DRAIN GATE	Original	IRFU9110, IRFR9110 O-251AA IRFU9110 IRFR9110 31e-10 1e-30 25e-4 03e-6) IF9110 IRFR91109A TA17541	PDF
IF9110 Abstract: IRFR9110 2-03E6 TA17541 irfu9110 Text: IRFU9110, IRFR9110 ¡31 H a r r i s mu S E M I C O N D U C T O R m “ * m w j mm mm m mw r m m w 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1 A, 100V SOURCE • r DS ON = 1 -2 0 0 i i	OCR Scan	IRFU9110, IRFR9110 O-251AA IRFU9110 IRFR9110 23e-14 74e-2 95e-3 30e-6 72e-10 IF9110 2-03E6 TA17541	PDF
s276 Abstract: fr9110 PLIC 9110 Text: & IRFU9110, IRFR9110 M A « 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D e ce m b e r 1995 Features Packaging JEDEC T O -251A A • 3.1 A, 100V • r DS ON = 1 -200i i • Temperature Compensating PSPICE Model DRAIN (FLANGE)	OCR Scan	IRFU9110, IRFR9110 -251A -200i 23e-14 74e-2 95e-3 30e-6 72e-10 45e-7) s276 fr9110 PLIC 9110	PDF
IF9110 Abstract: No abstract text available Text: & IRFU9110, IRFR9110 3.1 A, 100V, A valanche Rated, P-Channel E nhancem ent-M ode Pow er MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1A, 100V ■ r DS<ON SOURCE = 1-200Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve	OCR Scan	IRFU9110, IRFR9110 O-251AA 1-200Q IRFU9110 IRFR9110 39e-4 87e-5) 31e-10 1e-30 IF9110	PDF