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    P CHANNEL JUNCTION FET Search Results

    P CHANNEL JUNCTION FET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL JUNCTION FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Junction-FET

    Abstract: 2SJ164 2SK1104 SC-72
    Text: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS


    Original     		PDF 2SJ164 2SK1104 SC-72 Junction-FET 2SJ164 2SK1104 SC-72

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 2.90+0.20 –0.05


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    2SK1104

    Abstract: 2SJ0164 2SJ164 SC-72
    Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage


    Original     		PDF 2SJ0164 2SJ164) 2SK1104 SC-72 2SK1104 2SJ0164 2SJ164 SC-72

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103 SC-59

    Untitled

    Abstract: No abstract text available
    Text: 2SJ163 Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction Unit : mm For general use switching Complementary with 2SK1103 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID –20 mA Gate current IG –10


    Original     		PDF 2SJ163 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Features ■ Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2


    Original     		PDF 2002/95/EC) 2SJ0364G

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 O-236 SC-59

    Junction-FET

    Abstract: 2SJ0163 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 3 V Drain current ID −20 mA Gate current


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 Junction-FET 2SJ0163 2SJ163 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name


    Original     		PDF 2002/95/EC) 2SJ0364G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features


    Original     		PDF 2002/95/EC) 2SJ0164 2SJ164) 2SK1104

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name


    Original     		PDF 2002/95/EC) 2SJ0364G

    VDSV

    Abstract: 2SJ163 2SK1103 mini 29
    Text: Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS 65 V Drain current ID −20


    Original     		PDF 2SJ163 2SK1103 VDSV 2SJ163 2SK1103 mini 29

    2SJ0364

    Abstract: 2SJ364
    Text: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-Channel Junction FET For analog switch (0.425) unit: mm 0.3+0.1 –0.0 • Features ● Low ON-resistance ● Low-noise characteristics 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10


    Original     		PDF 2SJ0364 2SJ364) 2SJ0364 2SJ364

    2SK1104

    Abstract: 2SJ0164 2SJ164
    Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features 15.6±0.5 • Low ON resistance • Low-noise characteristics


    Original     		PDF 2SJ0164 2SJ164) 2SK1104 2SK1104 2SJ0164 2SJ164

    2N5460

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460; 2N5461; 2N5462 DESCRIPTION P-channel silicon junction FET in a TO-92 plastic envelope. Intended for use as an analog switch and an amplifier. PINNING - TO-92 PIN DESCRIPTION 1


    OCR Scan     		PDF 2N5460; 2N5461; 2N5462 2N5460/5461/5462 2N5460 2N5461 2N5460

    2SJ145

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ145 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ145 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING 2.1 ±0.2 is especially designed for low frequency voltage amplify, analog switch


    OCR Scan     		PDF 2SJ145 2SJ145 SC-70 10mVrms.

    2SJ40

    Abstract: SK381 2SK381
    Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ40 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ40 is a small type resin sealed P channel junction type FET. It is OUTLINE DRAWING 4.3MAX especially designed to r low frequency voltage am plify, analog switch


    OCR Scan     		PDF 2SJ40 2SJ40 2SK381 10mVrms SK381 SK381 2SK381

    2SJ125

    Abstract: marking XI
    Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ125 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ125 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING o - +0.5 2-5 0.3 is especially designed for low frequency voltage amplify, analog switch


    OCR Scan     		PDF 2SJ125 2SJ125 SC-59 O-236 10mVrms. marking XI

    bf862

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in


    OCR Scan     		PDF BF862 MSB003 bf862

    NEC Ga FET marking L

    Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
    Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm


    OCR Scan     		PDF NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B NEC Ga FET marking L lg TYP 513 309 low noise FET NEC U SAAI Marking

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.


    OCR Scan     		PDF bb53T31 DQ240CH

    2N3820

    Abstract: No abstract text available
    Text: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET


    OCR Scan     		PDF 2N3820 MBB181 003SA4b S3T31 Q03Sfl4fl 2N3820

    "P-Channel JFET"

    Abstract: 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti
    Text: Philips Components 2N3820 Data sheet status Preliminary specification date of issue October 1990 P-channel J-FET PINNING • TO-92 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It ¡s intended for use in general purpose amplifiers.


    OCR Scan     		PDF 2N3820 MBB161 003Sfl4b 67max "P-Channel JFET" 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti

    Untitled

    Abstract: No abstract text available
    Text: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.


    OCR Scan     		PDF