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    Samtec Inc RF178-01BJ1-02SJ1-2500

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    2SJ125 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ125 Isahaya Electronics 150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. Original PDF
    2SJ125 Unknown FET Data Book Scan PDF

    2SJ125 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


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    PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: 2010年3月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorDiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 2


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    PDF 2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7

    e175 Siliconix

    Abstract: E175 fet MMBFJ174 2N5475 u301 siliconix InterFET u301 2N5114 motorola 55T175 2N5798 InterFET
    Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g.a Min (S) Max VGS(off) Max (V) IGSS Max (A) C'sa Max (F) PD Max (W) Derate at (WrC) Toper Max (DC) Package Style P-Channel JFETs, (Co nt' d) 5 10 - 15 20 2N3386 5MPJ271 TMPFJ271 E175


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    PDF 2N3386 5MPJ271 TMPFJ271 J175-18 MMBFJ175 5MPU305 5MP5115 TMPFU305 TMPF5115 e175 Siliconix E175 fet MMBFJ174 2N5475 u301 siliconix InterFET u301 2N5114 motorola 55T175 2N5798 InterFET

    2SJ1334

    Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
    Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,


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    PDF HA16142P/FP ADE-504-006 DO-35 DO-41 HA16142P/FP 2SJ1334 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    2SJ125

    Abstract: marking XI
    Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ125 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ125 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING o - +0.5 2-5 0.3 is especially designed for low frequency voltage amplify, analog switch


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    PDF 2SJ125 2SJ125 SC-59 O-236 10mVrms. marking XI

    2SA1927

    Abstract: 2SC5168 2SJ40 2SK433 2SC5169 2SA1929
    Text: # High hpE T ransistor with High- Current Resistors Max. rating« Type No. VCBO HT1PI37L RT1P137P RT1N137L LSS Si.PNP.E LSS Si.NPN.E RT1N137P LSS Si,NPN,E # LSS Si.PNP.E Electrical characteristics Bias Bias Application Structure fa -4 0 -4 0 40 40 lc V SBD


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    PDF HT1PI37L RT1P137P RT1N137L RT1N137P 2SJ40) 2SK108) SC-59 SC-70 SC-43 2SA1927 2SC5168 2SJ40 2SK433 2SC5169 2SA1929

    2sj111

    Abstract: 2SJ131 2SJ112 2SJ110 2SJ122 2SK722 2SJ121 2sj135 2SJ106 2SJ129
    Text: - 18 - §ü % tt € m tit ià ië f f j II =e 1 K 2SJ106 L F A, A - S W 2SJ107 L F A, A ~ S W j fë £ V* V * t* (V) ft * W. X I* ft (A) P d/ Pc h (max) (A) (W) M 4# te (max) (V) Vd s (V) (Ta=25Tï) I gss Vg s (V) (min) (A) (max) V d s (A) (V) (min) (V)


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    PDF 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 100kQ, 2SJ129 2SJ130 2SK722 2SJ131 2sj111 2SJ131 2SJ112 2SJ110 2SJ122 2SJ121 2sj135 2SJ106 2SJ129

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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