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    NPN TRANSISTOR 5 WATTS Search Results

    NPN TRANSISTOR 5 WATTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 5 WATTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE521

    Abstract: MJE371
    Text: ON Semiconductor MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers


    Original     		PDF MJE521 MJE371 r14525 MJE521/D MJE521 MJE371

    mje521 npn

    Abstract: No abstract text available
    Text: ON Semiconductor MJE521 Plastic Medium−Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers


    Original     		PDF MJE521 MJE371 mje521 npn

    MJE371

    Abstract: MJE521
    Text: ON Semiconductort MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers


    Original     		PDF MJE521/D r14525 MJE371 MJE521

    Untitled

    Abstract: No abstract text available
    Text: M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Die Outline MP4T80100 Features • • • MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT 6GHz Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when


    Original     		PDF MP4T80100 MP4T80100 300mA MP4T801 MP4T80100) 200mil MP4T801510) MP4T801510

    MP4T80100

    Abstract: MP4T801 M-Pulse Microwave NPN transistor 5 watts chip die npn transistor
    Text: M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Features • • • MP4T80100 Die Outline MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT 6GHz Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when


    Original     		PDF MP4T80100 MP4T80100 300mA MP4T801 MP4T80100) 200mil MP4T801510) MP4T801510 M-Pulse Microwave NPN transistor 5 watts chip die npn transistor

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    MJE521

    Abstract: Motorola design of audio amplifier MJE371 mje521 npn
    Text: MOTOROLA Order this document by MJE521/D SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521/D* MJE521/D MJE521 Motorola design of audio amplifier MJE371 mje521 npn

    MJ410

    Abstract: NPN 200 VOLTS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor 400 volts.50 amperes
    Text: MOTOROLA Order this document by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.


    Original     		PDF MJ410/D* MJ410/D MJ410 NPN 200 VOLTS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor 400 volts.50 amperes

    TIP36

    Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —


    Original     		PDF MJ410 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TIP36 BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364

    IC IL 117

    Abstract: 2N5011 2N5339A transistor sit TRANSISTOR 800h 2N5010 2N5012 2N5013 2N5152 2N5154
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 IC/ VCE min/max @ A/V PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 ¡¡I NPN TO-5


    OCR Scan     		PDF O-39/TO-5 2N4150A 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237A 2N5238A IC IL 117 2N5339A transistor sit TRANSISTOR 800h

    2N3440A

    Abstract: No abstract text available
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5


    OCR Scan     		PDF O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890 2N3440A

    nec 2sd882

    Abstract: 2sd882 nec 2SD882
    Text: NPN SILICON POWER TRANSISTOR 2SD882 DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC con­ verter and relay driver. PACKAGE DIMENSIONS in millimeters inches 8 .5 M A X . ( 0 .3 3 4 M A X .)


    OCR Scan     		PDF 2SD882 Oi003 nec 2sd882 2sd882 nec

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339


    OCR Scan     		PDF O-39/TO-5 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420

    2n5642

    Abstract: 2N5642 motorola 2N5642 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •


    OCR Scan     		PDF 2N5642 2n5642 2N5642 motorola 2N5642 equivalent

    RF NPN POWER TRANSISTOR l band

    Abstract: transistor su 312
    Text: • 0 D1 7 5 4 4 sm ■ MITSUB.SH. RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on UHF band mobile radio applications.


    OCR Scan     		PDF 2SC1968 470MHz 470MHz. GD1754b 2SC1968 RF NPN POWER TRANSISTOR l band transistor su 312

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2628 2SC2628 175MHz 175MHz,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. 4 0±0 5 H


    OCR Scan     		PDF 2SC1967 2SC1967

    2SC2628

    Abstract: NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2628 2SC2628 175MHz 175MHz, NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor

    MJ410

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.


    OCR Scan     		PDF MJ410/D MJ410 O-204AA

    MRF5175 transistor

    Abstract: MRF5175 transistor 2sc 546
    Text: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver


    OCR Scan     		PDF MRF5175 28-Volt, 400-M T-33-05 MRF5175 transistor MRF5175 transistor 2sc 546

    2N5189

    Abstract: MM5189 75 watt npn switching transistor
    Text: M M 5 1 8 9 s i l i c o n NPN SILICON ANNULAR NPN SILICON HIGH CURRENT AMPLIFIER AND CORE DRIVER TRANSISTOR TRANSISTOR . . . designed for use in high-current, high speed switching, and core driver applications. • • Collector-Emitter Breakdown Voltage —


    OCR Scan     		PDF MM5189 2N5189 300MS, 2N5189 MM5189 75 watt npn switching transistor

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b


    OCR Scan     		PDF O-39/TO-5 2N4150A 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237A 2N5238A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • • • High Collector-Emitter Voltage —


    OCR Scan     		PDF

    transistor Pout 5W

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 201 59 5 Watts, 900 MHz RF Power Transistor Preliminary Description Key Features The 20159 is NPN, common emitter RF Power Transistor intended for 24VDC operation across the 850-960 MHz frequency band. It is rated at 5 Watts minimum output power and may be used for


    OCR Scan     		PDF 24VDC 900MHz) transistor Pout 5W