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    NPN POWER 20A 200V Search Results

    NPN POWER 20A 200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    NPN POWER 20A 200V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC3664

    Abstract: EN2488 transistor 800V 1A
    Text: Ordering number:EN2488 NPN Triple Diffused Planar Type Darlington Silicon Transistor 2SC3664 400V/20A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage, high power switching. unit:mm 2022A [2SC3664] Features · Fast speed adoption of MBIT process .


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    EN2488 2SC3664 00V/20A 2SC3664] 2SC3664 EN2488 transistor 800V 1A PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN2488 NPN Triple Diffused Planar Type Darlington Silicon Transistor 2SC3664 400V/20A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage, high power switching. unit:mm 2022A [2SC3664] Features · Fast speed adoption of MBIT process .


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    EN2488 2SC3664 00V/20A 2SC3664] PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2488 2SC3664 i NPN Triple Diffused Planar Darlington Silicon Transistor i 400V/20A Driver Applications SANYO Applications . Induction cookers . High-voltage, high-power switching Features . Fast speed adoption of MBIT process . High breakdown voltage (VCBO=800V)


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    2SC3664 00V/20A T03PB 3257TA, PDF

    Vce-200V 20a

    Abstract: 200V transistor npn 10a 300V transistor npn 2a BUV22 equivalent BUV22
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV22 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power


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    BUV22 Vce-200V 20a 200V transistor npn 10a 300V transistor npn 2a BUV22 equivalent BUV22 PDF

    BUP54

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP54 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    BUP54 O-204AE) BUP54 PDF

    NPN Transistor 50A 400V

    Abstract: BUP53 400v 50A Transistor LE17 NPN Transistor 10A 400V to3 NPN Transistor 30A 400V
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    BUP53 O-204AE) NPN Transistor 50A 400V BUP53 400v 50A Transistor LE17 NPN Transistor 10A 400V to3 NPN Transistor 30A 400V PDF

    BUP54

    Abstract: LE17
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP54 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    BUP54 O-204AE) BUP54 LE17 PDF

    8313 transistor data

    Abstract: BUP52 LE17 300V transistor npn 15a 200V transistor npn 10a
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    BUP52 O-204AE) 8313 transistor data BUP52 LE17 300V transistor npn 15a 200V transistor npn 10a PDF

    BUP52

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    BUP52 O-204AE) BUP52 PDF

    BUP51

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    BUP51 O-204AE) BUP51 PDF

    BUP51

    Abstract: LE17 250V transistor npn 2a
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    BUP51 O-204AE) BUP51 LE17 250V transistor npn 2a PDF

    Transistor 200V 20A

    Abstract: 200V transistor npn 20a SDT6338 NPN Transistor VCEO 80V 100V POWER TRANSISTOR PNP 20a 80v TO-3 200V transistor pnp 20a
    Text: ^/outran [fk ®!!! ? ©ättm ^n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available)


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    305mm) Transistor 200V 20A 200V transistor npn 20a SDT6338 NPN Transistor VCEO 80V 100V POWER TRANSISTOR PNP 20a 80v TO-3 200V transistor pnp 20a PDF

    200V transistor npn 20a

    Abstract: Transistor 200V 20A 200V transistor pnp 20a NPN Transistor VCEO 80V 100V hfe 100 Transistor PnP 200V 20A
    Text: S OLI TRON DEV ICE S INC ^5 DE | ä 3 bflbOE ODOafib? □ r ‘- 7 j _ / s " tPE iß y 'F © ä to l® ® _ ^ w E iÉ ro n Devices, Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* x£\


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    305mm) 20MHz 700pF 700pF 200V transistor npn 20a Transistor 200V 20A 200V transistor pnp 20a NPN Transistor VCEO 80V 100V hfe 100 Transistor PnP 200V 20A PDF

    Untitled

    Abstract: No abstract text available
    Text: BUP54 NPN MULTI-EPITAXIAL TRANSISTOR MECHANICAL DATA Dimensions in mm 3 9 .9 5 1 .5 7 3 m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) FEATURES 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) • LOW VCE(SAT) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s .


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    BUP54 BUP54" BUP54 PDF

    sdt14304

    Abstract: 041m 200V transistor npn 20a
    Text: -Jfotttran PlËM (yj(§¥ Ä1TM,©( Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 14) c^lcrfl CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


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    305mm) 12MHz 12MHz 600pF sdt14304 041m 200V transistor npn 20a PDF

    JAN2N3846

    Abstract: JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v
    Text: jg m m ^alîtran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER FORMERLY 14 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


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    305mm) JAN2N3846 JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v PDF

    Transistor 200V 20A

    Abstract: SDT6338
    Text: [ ^ E iiy x g ir g Ä T Ä ii © MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CH IP NUM BER .J f o lit r o NPN EPITAXIAL PLANAR POWER TRANSISTOR * * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available


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    305mm) SDT6338 Transistor 200V 20A PDF

    LCD TV SMPS circuit

    Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
    Text: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient


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    O-263 FDZ2551N/FDZ2552P/FDZ2553N/FDZ2554P FDS6572A/FDS6574A Power247TM, LCD TV SMPS circuit MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJW18020 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-247 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:


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    MJW18020 O-247 PDF

    solitrondevices

    Abstract: Solitron transistor c47
    Text: 8368602 SOL ITRON D E V I C E S INC TS 95 D 0 2 8 3 7 D 3 DE |fi3bflbaa 000S037 1 |"~ Devices, inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 14 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


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    000S037 305mm) solitrondevices Solitron transistor c47 PDF

    2N6561

    Abstract: 2N6563 BUW73
    Text: -Ætttron Devices. Inc. HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 12 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on:


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    40nun 52tnm) 305mm) 2N6561 2N6563 BUW73 PDF

    2501 optocoupler

    Abstract: PA0815 6TPE220MI sot89 "NPN TRANSISTOR" AN19 LTC3725 LTC3726 Si7336ADP TRANSISTOR SUBSTITUTION fet 8205
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1031A-B 36V-72VIN, SYNCHRONOUS FORWARD CONVERTER LTC3725 / LTC3726 DESCRIPTION Demonstration circuit 1031A-B is a 36V-72Vin, synchronous forward converter featuring the LTC3725/LTC3726. This circuit was designed specifically to attain a high current, low ripple, synchronously rectified forward converter to efficiently


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    031A-B 6V-72VIN, LTC3725 LTC3726 031A-B LTC3725/LTC3726. 2501 optocoupler PA0815 6TPE220MI sot89 "NPN TRANSISTOR" AN19 LTC3726 Si7336ADP TRANSISTOR SUBSTITUTION fet 8205 PDF

    2501 optocoupler

    Abstract: Sanyo "date code" POSCAP Capacitor 6TPE220MI sanyo 6TPE220MI 100uF 250v capacitor vishay AN19 LTC3725 LTC3726 Si7336ADP TRANSISTOR SUBSTITUTION
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1031A-A 36V-72VIN, SYNCHRONOUS FORWARD CONVERTER LTC3725 / LTC3726 DESCRIPTION Demonstration circuit 1031A-A is a 36V-72Vin, synchronous forward converter featuring the LTC3725/LTC3726. This circuit was designed specifically to attain a high current, low ripple, synchronously rectified forward converter to efficiently


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    031A-A 6V-72VIN, LTC3725 LTC3726 031A-A LTC3725/LTC3726. 2501 optocoupler Sanyo "date code" POSCAP Capacitor 6TPE220MI sanyo 6TPE220MI 100uF 250v capacitor vishay AN19 LTC3726 Si7336ADP TRANSISTOR SUBSTITUTION PDF