2SC3664
Abstract: EN2488 transistor 800V 1A
Text: Ordering number:EN2488 NPN Triple Diffused Planar Type Darlington Silicon Transistor 2SC3664 400V/20A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage, high power switching. unit:mm 2022A [2SC3664] Features · Fast speed adoption of MBIT process .
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EN2488
2SC3664
00V/20A
2SC3664]
2SC3664
EN2488
transistor 800V 1A
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2488 NPN Triple Diffused Planar Type Darlington Silicon Transistor 2SC3664 400V/20A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage, high power switching. unit:mm 2022A [2SC3664] Features · Fast speed adoption of MBIT process .
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EN2488
2SC3664
00V/20A
2SC3664]
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Vce-200V 20a
Abstract: 200V transistor npn 10a 300V transistor npn 2a BUV22 equivalent BUV22
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV22 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power
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BUV22
Vce-200V 20a
200V transistor npn 10a
300V transistor npn 2a
BUV22 equivalent
BUV22
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BUP54
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP54 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP54
O-204AE)
BUP54
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NPN Transistor 50A 400V
Abstract: BUP53 400v 50A Transistor LE17 NPN Transistor 10A 400V to3 NPN Transistor 30A 400V
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP53
O-204AE)
NPN Transistor 50A 400V
BUP53
400v 50A Transistor
LE17
NPN Transistor 10A 400V to3
NPN Transistor 30A 400V
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BUP54
Abstract: LE17
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP54 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP54
O-204AE)
BUP54
LE17
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8313 transistor data
Abstract: BUP52 LE17 300V transistor npn 15a 200V transistor npn 10a
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP52
O-204AE)
8313 transistor data
BUP52
LE17
300V transistor npn 15a
200V transistor npn 10a
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BUP52
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP52
O-204AE)
BUP52
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BUP51
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP51
O-204AE)
BUP51
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BUP51
Abstract: LE17 250V transistor npn 2a
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP51
O-204AE)
BUP51
LE17
250V transistor npn 2a
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Untitled
Abstract: No abstract text available
Text: BUP54 NPN MULTI-EPITAXIAL TRANSISTOR MECHANICAL DATA Dimensions in mm 3 9 .9 5 1 .5 7 3 m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) FEATURES 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) • LOW VCE(SAT) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s .
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BUP54
BUP54"
BUP54
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LCD TV SMPS circuit
Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
Text: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient
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O-263
FDZ2551N/FDZ2552P/FDZ2553N/FDZ2554P
FDS6572A/FDS6574A
Power247TM,
LCD TV SMPS circuit
MOSFET 200v 20A n.channel
CY63413
laptop lcd inverter
Power line load switch for portable dvd china
NC7SV158
automatic WATER LEVEL pump CONTROL
mosfet triggering circuit for inverter
list of P channel power mosfet
FQPF18N50
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJW18020 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-247 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:
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MJW18020
O-247
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2501 optocoupler
Abstract: Sanyo "date code" POSCAP Capacitor 6TPE220MI sanyo 6TPE220MI 100uF 250v capacitor vishay AN19 LTC3725 LTC3726 Si7336ADP TRANSISTOR SUBSTITUTION
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1031A-A 36V-72VIN, SYNCHRONOUS FORWARD CONVERTER LTC3725 / LTC3726 DESCRIPTION Demonstration circuit 1031A-A is a 36V-72Vin, synchronous forward converter featuring the LTC3725/LTC3726. This circuit was designed specifically to attain a high current, low ripple, synchronously rectified forward converter to efficiently
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031A-A
6V-72VIN,
LTC3725
LTC3726
031A-A
LTC3725/LTC3726.
2501 optocoupler
Sanyo "date code" POSCAP Capacitor
6TPE220MI
sanyo 6TPE220MI
100uF 250v capacitor vishay
AN19
LTC3726
Si7336ADP
TRANSISTOR SUBSTITUTION
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 2488 2SC3664 i NPN Triple Diffused Planar Darlington Silicon Transistor i 400V/20A Driver Applications SANYO Applications . Induction cookers . High-voltage, high-power switching Features . Fast speed adoption of MBIT process . High breakdown voltage (VCBO=800V)
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2SC3664
00V/20A
T03PB
3257TA,
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Transistor 200V 20A
Abstract: 200V transistor npn 20a SDT6338 NPN Transistor VCEO 80V 100V POWER TRANSISTOR PNP 20a 80v TO-3 200V transistor pnp 20a
Text: ^/outran [fk ®!!! ? ©ättm ^n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available)
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305mm)
Transistor 200V 20A
200V transistor npn 20a
SDT6338
NPN Transistor VCEO 80V 100V
POWER TRANSISTOR PNP 20a 80v TO-3
200V transistor pnp 20a
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200V transistor npn 20a
Abstract: Transistor 200V 20A 200V transistor pnp 20a NPN Transistor VCEO 80V 100V hfe 100 Transistor PnP 200V 20A
Text: S OLI TRON DEV ICE S INC ^5 DE | ä 3 bflbOE ODOafib? □ r ‘- 7 j _ / s " tPE iß y 'F © ä to l® ® _ ^ w E iÉ ro n Devices, Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* x£\
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305mm)
20MHz
700pF
700pF
200V transistor npn 20a
Transistor 200V 20A
200V transistor pnp 20a
NPN Transistor VCEO 80V 100V hfe 100
Transistor PnP 200V 20A
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200V transistor npn 20a
Abstract: Transistor 200V 20A 2N3846 200V transistor npn 10a
Text: SOLITRON DEVICES INC flt D E|a3tflb O B ODOESbO t 7" - 3 3 - 0 $ 114 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHNG NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT M ETALLIZATIO N Base and emitter: > F O R M E R L Y 14 5 0 . 0 0 0 A Aluminum Collector: Gold
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99mml
600pF
600pF
SDT14305,
2N3846,
SDT14414,
200V transistor npn 20a
Transistor 200V 20A
2N3846
200V transistor npn 10a
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sdt14304
Abstract: 041m 200V transistor npn 20a
Text: -Jfotttran PlËM (yj(§¥ Ä1TM,©( Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 14) c^lcrfl CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
12MHz
12MHz
600pF
sdt14304
041m
200V transistor npn 20a
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JAN2N3846
Abstract: JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v
Text: jg m m ^alîtran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER FORMERLY 14 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
JAN2N3846
JAN2N3847
SDT14304
SDT14305
SDT14414
NPN Transistor 10A 400V to3
npn power 20a 200v
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Transistor 200V 20A
Abstract: SDT6338
Text: [ ^ E iiy x g ir g Ä T Ä ii © MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CH IP NUM BER .J f o lit r o NPN EPITAXIAL PLANAR POWER TRANSISTOR * * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available
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305mm)
SDT6338
Transistor 200V 20A
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solitrondevices
Abstract: Solitron transistor c47
Text: 8368602 SOL ITRON D E V I C E S INC TS 95 D 0 2 8 3 7 D 3 DE |fi3bflbaa 000S037 1 |"~ Devices, inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 14 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum
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000S037
305mm)
solitrondevices
Solitron
transistor c47
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2N6561
Abstract: 2N6563 BUW73
Text: -Ætttron Devices. Inc. HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 12 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on:
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40nun
52tnm)
305mm)
2N6561
2N6563
BUW73
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