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    NPDS8301 Search Results

    NPDS8301 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NPDS8301 Fairchild Semiconductor N-Channel General Purpose Dual Amplifier Original PDF
    NPDS8301 National Semiconductor N-Channel General Purpose Dual Amplifier Scan PDF
    NPDS8301 National Semiconductor General Purpose Dual JFETs Scan PDF

    NPDS8301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPDS8301

    Abstract: NPDS8302 NPDS8303
    Text: NPDS8301 NPDS8302 NPDS8303 S2 NC D2 G2 G1 NC SO-8 S1 D1 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 40 VGS Gate-Source Voltage


    Original
    PDF NPDS8301 NPDS8302 NPDS8303 NPDS8301 NPDS8302 NPDS8303

    2n5248

    Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
    Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640


    Original
    PDF 2N5555 2N5638 2N5639 2N5640 PN4360 PN5033 2n5248 PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


    Original
    PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428

    S8302

    Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
    Text: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage


    OCR Scan
    PDF NPDS8301 NPDS8302 NPDS8303 bSQ1130 S8302 S8303 NPDS8303

    Untitled

    Abstract: No abstract text available
    Text: B E M iC O N P U C T O R m NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V V dg Drain-Gate Voltage 40 V gs Gate-Source Voltage


    OCR Scan
    PDF NPDS8301 NPDS8302 NPDS8303 NPDS8301 NPDS8302

    Untitled

    Abstract: No abstract text available
    Text: D iscrete POW ER & S ig n a l Technologies S - S V J iO O N O L iC ì T O ^ ! •••:•: NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum Ratings* Symbol TA = 25 °C unless otherwise noted Parameter


    OCR Scan
    PDF NPDS8301 NPDS8302 NPDS8303

    Untitled

    Abstract: No abstract text available
    Text: D is c re te PO W E R & S ig n a l T ech n ologies SE M C O N O U C T Q R ; NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Màximum RâtinÇjS Symbol TA = 25°C unless otherwise noted Parameter Value Units


    OCR Scan
    PDF NPDS8301 NPDS8302 NPDS8303

    NPDS402

    Abstract: TO-69 NPDS403 NPDS404 NPDS406 NPDS5565 NPDS5566 NPDS5911 NPDS5912 NPDS8301
    Text: This _JFETs Material tr Discrete POWER & Signal Technologies National In a Semiconductor tH IH ÜJ ” General Purpose Dual JFETs a Copyrighted o □ -p a -C □9 ÜJ J] By ru Its Respective ro k Device No. Case Style Op. Char. ^0«1! ^0* VM « •„ mV


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    PDF NPDS402 NPDS403 NPDS404 NPDS406 NPDS5565 NPDS5566 NPDS5911 NPDS5912 NPDS8301 NPDS8302 TO-69

    MMBF310

    Abstract: bfj113 NPDS PN5434 BF244A MMBF4119 MMBFJ201
    Text: Fairchild Semiconductor [¡ ¡ g ^ g p0Wgr an J 3¡qna| TeChnOlOQÌeS Selection Guides Surface Mount SOT-23, Through-Hole TO-92 and Dual SOB JFETs loss M in/ M ax mA V GS (off M in/M ax Part Number Volts Id |iA Gfs M in/ M ax mS sv 9» M in S0T-23/T0-92 •d s s


    OCR Scan
    PDF OT-23, S0T-23/T0-92 MMBFJ201/J201 MMBF4117/PN4117 MMBF4119/PN4119 MMBF4392/PN4392 11/J111 BFJ113/J113 BF244A BF244C MMBF310 bfj113 NPDS PN5434 MMBF4119 MMBFJ201

    S8303

    Abstract: S8302 S8304
    Text: JFETs tß Device No. Discrete POWER & Signal Technologies National Semiconductor'“ General Purpose Dual JFETs C ase Style Drift Op. K ,J Char. jiWC Vqo 6 lD (mV( ÄV», (V) (|iA| Max Max V„s G os C M R R (|imho| (dB) (V) Max Min Min Max Max Min N PD S402


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    PDF S5565 S5566 NPDS5911 S5912 NPDS8301 S8302 S8303 S8304 S8304