NPDS402

Abstract: NPDS403 NPDS404 NPDS406
Contextual Info: NPDS402 / NPDS403 1 NPDS404 / NPDS406 Discrete POWER & S ignal Technologies National Semiconductor" NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings* TA = 25"C unless otherwise noted

S8302

Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
Contextual Info: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage

Contextual Info: Ü M ICONpyCTO R NPDS5565 NPDS5566 N-Channel General Purpose Dual Amplifier Sourced from Process 96. Absolute Màximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units V dg Drän-Gate Voltage 40 V V gs Gate-Source Voltage 40

Contextual Info: I ^'CIS H î SEM ICON DUCTO R NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Màximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units V dg Drän-G ate Voltage 50 gs

DG 402 rp

Contextual Info: NPDS402 I NPDS403 I NPDS4041 NPDS406 Discrete POWER & Signal Technologies National Semiconductor" t ß NPDS402 NPDS403 NPDS404 NPDS406 D2 s2 — NC ^ S O -8 % NC D1 S1 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings*

Contextual Info: e D iscrete POWER & S ign al Technologies yITTE1 i 1 S w k liiiv SEMICONDUCTOR NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Màximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units

Contextual Info: : S ^ ' M K £ O N Q ‘U « ro H : NPDS5565 NPDS5566 N-Channel General Purpose Dual Amplifier Sourced from Process 96. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V V dg Drain-Gate Voltage 40 V gs Gate-Source Voltage

NPDS8301

Abstract: NPDS8302 NPDS8303
Contextual Info: NPDS8301 NPDS8302 NPDS8303 S2 NC D2 G2 G1 NC SO-8 S1 D1 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 40 VGS Gate-Source Voltage

Contextual Info: Discrete POWER & Signal Technologies * l SKfvVCDNO iJCTQR NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V dg Drain-Gate Voltage

NPDS5566

Abstract: NPDS5565
Contextual Info: NPDS5565 NPDS5566 S2 D2 NC G2 SO-8 S1 D1 G1 NC N-Channel General Purpose Dual Amplifier Sourced from Process 96. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 40 V VDG Drain-Gate Voltage VGS Gate-Source Voltage 40

25CC

Abstract: NPDS5911 NPDS5912
Contextual Info: NPDS5911 I NPDS5912 Discrete POWER & Signal Technologies National e * Semiconductor" NPD S5911 N PD S5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* ta=25°cunie«otherwisenoted Parameter Symbol Value Units

Contextual Info: B E M iC O N P U C T O R m NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V V dg Drain-Gate Voltage 40 V gs Gate-Source Voltage

NPDS402

Abstract: NPDS403 NPDS404 NPDS406
Contextual Info: Discrete POWER & Signal Technologies nt B S y iq P N D Ü C T Q R NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum RâtinÇJS T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value

NPDS5566

Abstract: NPDS5565
Contextual Info: S e m i c o n d u c t o r " NPDS5565 NPDS5566 N-Channel General Purpose Dual Amplifier Sourced from Process 96. Absolute Maximum Ratings* Symbol TA = 25*C uriess otherwise noled Parameter Value □rain-Gate Voltage 40 V V gs Gate-Source Voltage 40 V Igf Gate Current

Contextual Info: =?.ç~ > 'A ; G n N p L i c r q r i ,: NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings* Symbol TA = 2 5 °C unless otherwise noted Parameter Value Units V dg Drain-Gate Voltage 50 V

Contextual Info: D is c re te PO W E R & S ig n a l T ech n ologies SE M C O N O U C T Q R ; NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Màximum RâtinÇjS Symbol TA = 25°C unless otherwise noted Parameter Value Units

NPDS5566

Contextual Info: S E y i D D N P U C T 'G R NPDS5565 NPDS5566 N-Channel General Purpose Dual Amplifier Sourced from Process 96. Absolute Maximum Ratings* Symbol ,a Parameter Value Units V V dg Drain-Gate Voltage 40 V gs Gate-Source Voltage 40 V Igf Gate Current 10 mA T j , T S1g

NPDS5912

Abstract: NPDS5911
Contextual Info: NPDS5911 NPDS5912 S2 NC D2 G2 SO-8 S1 D1 G1 NC N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 25 VGS Gate-Source Voltage 25

NPDS402

Abstract: NPDS403 NPDS404 NPDS406
Contextual Info: NPDS402 NPDS403 NPDS404 NPDS406 S2 NC D2 G2 SO-8 S1 D1 G1 NC N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 50 VGS Gate-Source Voltage

NPDS5911

Contextual Info: • E S W C D N iD U i: NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* Symbol T A = 2 5 ° C unless o th e rw ise noted Parameter Value Units V V dg Drain-Gate Voltage 25 V gs Gate-Source Voltage

Contextual Info: S S M IQ C S S D U U T O R NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V dg Drain-Gate Voltage 25 V V gs Gate-Source Voltage 25

NPD5566

Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
Contextual Info: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15

robot control

Abstract: C203 C209 SPRU121 TMS320 TMS320C203 TMS320C209 XDS510 TMS320F2XX
Contextual Info: TMS320C2xx User’s Guide Literature Number: SPRU127B Manufacturing Part Number: D412008-9761 revision A January 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

Contextual Info: GEC P LES S EY w , O c t o b e r 1994 ADVANCE INFORMATION S E M I C O N D U C T O R S D S 4 0 0 3 - 1.4 SL6610 DIRECT CONVERSION FSK DATA RECEIVER This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609A