NPDS5911 Search Results

Contextual Info: e D iscrete POWER & S ign al Technologies yITTE1 i 1 S w k liiiv SEMICONDUCTOR NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Màximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units

25CC

Abstract: NPDS5911 NPDS5912
Contextual Info: NPDS5911 I NPDS5912 Discrete POWER & Signal Technologies National e * Semiconductor" NPD S5911 N PD S5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* ta=25°cunie«otherwisenoted Parameter Symbol Value Units

NPDS5912

Abstract: NPDS5911
Contextual Info: NPDS5911 NPDS5912 S2 NC D2 G2 SO-8 S1 D1 G1 NC N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 25 VGS Gate-Source Voltage 25

NPDS5911

Contextual Info: • E S W C D N iD U i: NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* Symbol T A = 2 5 ° C unless o th e rw ise noted Parameter Value Units V V dg Drain-Gate Voltage 25 V gs Gate-Source Voltage

Contextual Info: S S M IQ C S S D U U T O R NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V dg Drain-Gate Voltage 25 V V gs Gate-Source Voltage 25

NPD5566

Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
Contextual Info: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15

2n5248

Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Contextual Info: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640

NPDS402

Abstract: TO-69 NPDS403 NPDS404 NPDS406 NPDS5565 NPDS5566 NPDS5911 NPDS5912 NPDS8301
Contextual Info: This _JFETs Material tr Discrete POWER & Signal Technologies National In a Semiconductor tH IH ÜJ ” General Purpose Dual JFETs a Copyrighted o □ -p a -C □9 ÜJ J] By ru Its Respective ro k Device No. Case Style Op. Char. ^0«1! ^0* VM « •„ mV

NPD5566

Abstract: NPDS5564 2N5911 2N6485 SOIC-8
Contextual Info: N Channel Vp Device V Min Max Gfc V Q81-2 (mmho) Min Max VOS (mV) Max Drift QM C) AVgs Max ' ' ' •dss ßfc Match % Match % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50 5 5 TO-71 2N3958 1 4.5 1 3 25 100 15 15 TO-71 2N5197 0.7 4.0 1 4

NPD5564

Abstract: NPD5566 NPD8303 npd5565 2N5565 T071 2N5906 dual jfets NPD5566 Dual jfets
Contextual Info: Dual JFETs • b5D1130 DD^^SDS bSD « N S C S NATL SEHICOND DISCRETE N Channel vP Device (V) Min Max G* VGS1-2 (mmho) Min Max Vos (mV) Max Drift (nV/C) A V bs Max ßfc ■oss Match Match % % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50

J300D

Abstract: E212 siliconix MP5912 GAA 645 BF246A
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) gf. Min (S) Max VGS(Off) Max (V) IGSS Max (A) CI. Max (F) PD Max (W) Derate at Toper (WrC) JOC) Max Package Style N-Channel JFETs, (ContI d) 5 10 15 20 J109•18 MFE2011 MFE2011 TPJ109

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

S8303

Abstract: S8302 S8304
Contextual Info: JFETs tß Device No. Discrete POWER & Signal Technologies National Semiconductor'“ General Purpose Dual JFETs C ase Style Drift Op. K ,J Char. jiWC Vqo 6 lD (mV( ÄV», (V) (|iA| Max Max V„s G os C M R R (|imho| (dB) (V) Max Min Min Max Max Min N PD S402