NPDS5912
Abstract: NPDS5911
Text: NPDS5911 NPDS5912 S2 NC D2 G2 SO-8 S1 D1 G1 NC N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 25 VGS Gate-Source Voltage 25
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NPDS5911
NPDS5912
NPDS5911
NPDS5912
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2n5248
Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640
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2N5555
2N5638
2N5639
2N5640
PN4360
PN5033
2n5248
PF5101
2N5248 equivalent
2N5247
PN4857
PN4858
U1897
2N5245
PF5301-2
2N5460
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J300D
Abstract: E212 siliconix MP5912 GAA 645 BF246A
Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) gf. Min (S) Max VGS(Off) Max (V) IGSS Max (A) CI. Max (F) PD Max (W) Derate at Toper (WrC) JOC) Max Package Style N-Channel JFETs, (ContI d) 5 10 15 20 J109•18 MFE2011 MFE2011 TPJ109
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MFE2011
TPJ109
PN5163
SMP5163
TMPF5163
TP5163
MP5912
J300D
E212 siliconix
GAA 645
BF246A
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
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Untitled
Abstract: No abstract text available
Text: e D iscrete POWER & S ign al Technologies yITTE1 i 1 S w k liiiv SEMICONDUCTOR NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Màximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units
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NPDS5911
NPDS5912
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25CC
Abstract: NPDS5911 NPDS5912
Text: NPDS5911 I NPDS5912 Discrete POWER & Signal Technologies National e * Semiconductor" NPD S5911 N PD S5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* ta=25°cunie«otherwisenoted Parameter Symbol Value Units
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NPDS5911
NPDS5912
V00-1BV:
bS0113D
25CC
NPDS5912
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NPDS5911
Abstract: No abstract text available
Text: • E S W C D N iD U i: NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* Symbol T A = 2 5 ° C unless o th e rw ise noted Parameter Value Units V V dg Drain-Gate Voltage 25 V gs Gate-Source Voltage
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NPDS5911
NPDS5912
The01
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Untitled
Abstract: No abstract text available
Text: S S M IQ C S S D U U T O R NPDS5911 NPDS5912 N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V dg Drain-Gate Voltage 25 V V gs Gate-Source Voltage 25
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NPDS5911
NPDS5912
NPDS5911
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NPD5566
Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
Text: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15
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bSQ1130
2N3955
2N3956
2N3958
2N5197
2N5564
2N5565
2N5566
2N5906
2N5908
NPD5566
npd5565
NPD5566 Dual jfets
2N6485
2N3955 NATIONAL SEMICONDUCTOR
NP05564
npds5564
NPD8303
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NPDS402
Abstract: TO-69 NPDS403 NPDS404 NPDS406 NPDS5565 NPDS5566 NPDS5911 NPDS5912 NPDS8301
Text: This _JFETs Material tr Discrete POWER & Signal Technologies National In a Semiconductor tH IH ÜJ ” General Purpose Dual JFETs a Copyrighted o □ -p a -C □9 ÜJ J] By ru Its Respective ro k Device No. Case Style Op. Char. ^0«1! ^0* VM « •„ mV
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NPDS402
NPDS403
NPDS404
NPDS406
NPDS5565
NPDS5566
NPDS5911
NPDS5912
NPDS8301
NPDS8302
TO-69
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NPD5566
Abstract: NPDS5564 2N5911 2N6485 SOIC-8
Text: N Channel Vp Device V Min Max Gfc V Q81-2 (mmho) Min Max VOS (mV) Max Drift QM C) AVgs Max ' ' ' •dss ßfc Match % Match % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50 5 5 TO-71 2N3958 1 4.5 1 3 25 100 15 15 TO-71 2N5197 0.7 4.0 1 4
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NPD5564
Abstract: NPD5566 NPD8303 npd5565 2N5565 T071 2N5906 dual jfets NPD5566 Dual jfets
Text: Dual JFETs • b5D1130 DD^^SDS bSD « N S C S NATL SEHICOND DISCRETE N Channel vP Device (V) Min Max G* VGS1-2 (mmho) Min Max Vos (mV) Max Drift (nV/C) A V bs Max ßfc ■oss Match Match % % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50
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b5D1130
T0-71
T0-78
NPD5564
NPD5566
NPD8303
npd5565
2N5565
T071
2N5906
dual jfets
NPD5566 Dual jfets
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S8303
Abstract: S8302 S8304
Text: JFETs tß Device No. Discrete POWER & Signal Technologies National Semiconductor'“ General Purpose Dual JFETs C ase Style Drift Op. K ,J Char. jiWC Vqo 6 lD (mV( ÄV», (V) (|iA| Max Max V„s G os C M R R (|imho| (dB) (V) Max Min Min Max Max Min N PD S402
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S5565
S5566
NPDS5911
S5912
NPDS8301
S8302
S8303
S8304
S8304
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