marking GEC
Abstract: No abstract text available
Text: 37bfl522 0G20141 34Ô « P L S B Si GEC P L E S S E Y m arch1W4 S E M I C O N D U C T O R S DS3867-1.4 QC6109/10 Series 0.0015 to 30MHz QUARTZ CRYSTAL OSCILLATORS The QC6109/10 Series Quartz Crystal Oscillators are specifically designed to give a wide range of available
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37bfl522
0G20141
DS3867-1
QC6109/10
30MHz
QC6109/XX-XX
QC6110/XX-XX
marking GEC
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Untitled
Abstract: No abstract text available
Text: 43E J> ÛEC PLESSEY SEMICONDS B 37bfl522 Ü012b42 T O P L S B GS EEMCI C OPNLD EU CSTSO ER SY 'T'51-qoi-OS 2091-1.0 SP98608 8-BIT LATCHED 450MHz MULTIPLYING D-A CONVERTER T h e SP98608 is an EC L 10K com patible 8-bit latched D AC . T h e 2.2nsec settling tim e allows a 450 m egasam ple per
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37bfl522
012b42
51-qoi-OS
SP98608
450MHz
SP98608
37bflS55
T-51-09-08
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Untitled
Abstract: No abstract text available
Text: 6EC PLESSEY SEMICONDS 43E D • 37bfl522 001373b 2 H P L S B GEC PLESSEY ¡SEMICONDUCTORS I SP8790 60MHz - 4 2-MODULUS EXTENDER The SP8790 is a divide-by-four counter designed for use with 2-modulus counters. It increases the minimum division ratio of the 2-modulus counter while retaining the same
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37bfl522
001373b
SP8790
60MHz
SP8790
SP800Q
SP8695.
SP8643/47
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Untitled
Abstract: No abstract text available
Text: 37bfl522 GQlàMbb fl^Q « P L S B Si GEC PLESSEY SEMICONDUCTORS DC1523/28/29 SILICON SCHOTTKY C-BAND MICROSTRIP LID MIXER DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance
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37bfl522
DC1523/28/29
DC1523
DC1528
DC1529
100nA
350mV
200fF
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Untitled
Abstract: No abstract text available
Text: 37bfl522 0013472 0^4 « P L S B Sü GEC PLESSEY SEMICONDUCTORS DC1553/57 SILICON SCHOTTKY X-BAND ZERO BIAS MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance
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37bfl522
DC1553/57
400mW
300mW
DC1553
DC1557
-20dBm)
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS 4bE T> m 37bfl522 OOlb'ib? 3 • PLSB GEC PLESSEY MARCH 1992 PRELIMINARY INFORMATION ¡s e m i c o n d u c t o r s ! OS3234 1.1 P10C68 INDUSTRIAL GRADE CMOS/SNOS nvSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM The P10C68 is a fast static RAM 35 and 45 ns with a
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37bfl522
S3234
P10C68
P10C68
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Untitled
Abstract: No abstract text available
Text: • 37bfl522 QGlfiHbfl w MPLSB GEC PLESSEY SEMICONDUCTORS DC1524 SILICON SCHOTTKY J-BAND MICROSTRIP LID MIXER DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance
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37bfl522
DC1524
400mW
300mW
100H-A
350mV
150nA
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y S E M I C O N D S HbE D m 37bfl522 D D l b b 7 G 2 I PLSB GEC PLES SE Y 0 <=| ISEMICONDUCTORS I 3122-1.2 October 1991 C T 1487M /C T 1589M MIL-STD-1553 LOW POWER SINGLE AND DUAL TRANSCEIVERS FEATURES GENERAL DESCRIPTION • Available in ±15V CT1487M and ±12 V (CT1589M)
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37bfl522
1487M
1589M
MIL-STD-1553
CT1487M)
CT1589M)
CT1487M/CT1589M
CT1589MIFP
CT1487D
CT1589D
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Untitled
Abstract: No abstract text available
Text: 37bfl522 001Ö5D7 133 « P L S B Si G E C P L E S S E Y SEMICONDUCTORS DC1841/45 PLANAR DOPED BARRIER MICROSTRIP LID/MICROLID DETECTOR DIODE Planar Doped Barrier PDB diodes represent a major advancement in detector technology. These diodes offer very high tangential sensitivity, high compression point and very
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37bfl522
DC1841/45
37bfiS2E
-10dB
37bfiSSE
35GHz)
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y S E M I C O N D S 31E D • 37bfl522 D O l l b i ? fl ■ O PLESSEY T -4 2 -z i FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Sem icustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro cess allowing for operation at voltages up to 20V. Typical
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37bfl522
thoro444410
PS2314,
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Untitled
Abstract: No abstract text available
Text: 37bfl522 0Q1Ö773 773 « P L S B Si GE C P L E S S E Y SEMICONDUCTORS DS3217-1.3 DW9537 UHF FIXED FREQUENCY SAW RESONATOR OSCILLATOR The use of thin film circuitary techniques with chip and wire construction allow small UHF sources to be realised. These oscillators are stabalised by lightly loaded SAW resonators
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37bfl522
DS3217-1
DW9537
700MHz
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DW9248
Abstract: No abstract text available
Text: 37bfl522 5Ë 0010^20 04^ GEC PLESSEY IPLSB SEMICONDUCTORS DS3736-1.2 DW9248 71.0MHz LOW LOSS SAW I.F. FILTER FOR PERSONAL COMMUNICATIONS The DW9248 has been specifically designed for GSM digital Personal Communications Applications, where the first I.F. filter stage is typically in the 60-80MHZ range. The filter
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37bfl522
DS3736-1
DW9248
DW9248
60-80MHZ
80kHz)
200kHz
400kHz
400kHz
600kHz
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f50z
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS IE D •! 37bfl522 0GQÔS12 T « P L S B A SPLESSEY e m ic o n d u c to rs l~ - 5 ê - 0 1 REF50/REF50Z 5V MICROPOWER PRECISION REFERENCES T h e REF50 and R EF50Z are m icropow er integrated circuits using the bandgap principle to provide a precise
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37bfl522
REF50/REF50Z
REF50
EF50Z
REF50Z
37b6S55
37bfiSEE
500/W
f50z
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U 121 d
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS 121 D 37bfl522 D01DD44 2 « P L S B Ô PLESSEY 'ÇÜr S e m ico n d u cto rs. PRELIMINARY INFORMATION PDSP1601/PDSP1601A T -m -u AUGMENTED ARITHMETIC LOGIC UNIT SUPERSEDES APRIL 1987 E D IT IO N The PDSP1601 is a high performance 16-bit arithmetic
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37bfl522
D01DD44
PDSP1601/PDSP1601A
PDSP1601
16-bit
PDSP1601A
20MHz
10MHz
U 121 d
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Untitled
Abstract: No abstract text available
Text: I 37bfl522 G01flbE3 2b7 MPLSB IP jp i G E C P L E S S E Y S E M I C O N D U C T O R S DS3487-1.2 DW9240 65.8125MHz LOW LOSS SAW I.F. FILTER FOR GSM PERSONAL COMMUNICATIONS The DW9240 Low Loss SAW Filter has been developed specifically for the Personal Communications market, where
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37bfl522
G01flbE3
DS3487-1
DW9240
8125MHz
DW9240
80MHz
200kHz
400kHz
600kHz
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GUNN DIODE plessey
Abstract: plessey 10 Gunn oscillator plessey 10 GHz Gunn oscillator DC1230 DC1252 DC1280 Gunn Diode DC1281F
Text: 37bfl522 GDIÖS'm b3b « P L S B Si GEC PLESSEY S E M I C O N D U C T O R S DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The DC1250 Series are gallium arsenide bulk effect devices for the generation of CW microwave power in the range 4GHz to18GHz depending on the cavity and diodes
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37bfl522
DS3486-1
DC1250/70/80
DC1250
to18GHz
DC1280.
DC1275
26GHz.
500mW
12GHz
GUNN DIODE plessey
plessey 10 Gunn oscillator
plessey 10 GHz Gunn oscillator
DC1230
DC1252
DC1280
Gunn Diode
DC1281F
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Untitled
Abstract: No abstract text available
Text: I 37bfl522 GGlflMM? 'JBT « P L S B GEC P LE S S E Y SEMICONDUCTORS DC1338/39 & DC1343 GaAs SCHOTTKY Q-BAND MICROSTRIP MIXER DIODES These diodes are used in mixer applications requiring a better noise figure than can be acheived with silicon diodes and as sensitive broadband detectors at high microwave
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37bfl522
DC1338/39
DC1343
250mW
100mW
DC1338
DC1339
700mV
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P2QFP100-GH-1420
Abstract: IR 1838 3v with 3 pins
Text: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with
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DS4375-2
CLA90000
144-ACB-4040
208-ACB-4545
209-ACB-4545
84-ACB-2828
P2QFP100-GH-1420
IR 1838 3v with 3 pins
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Untitled
Abstract: No abstract text available
Text: GE C P L E S S E Y Si si Mit Junens ADVANCE INFORMATION o \ I v c: I o K S DS40S6-2.4 GP2010 GLOBAL POSITIONING SYSTEM RECEIVER RF FRONT END The GP2010 is GEC Plessey Semiconductors' second generation RFFront-end for Global Positioning System GPS) receivers. The GP2010 uses many innovative design
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DS40S6-2
GP2010
GP2010
TheGP2010
42MHz)
37bfiS22
GD24f
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Untitled
Abstract: No abstract text available
Text: Si G E C P L E S S E Y ADVANCE INFORMATION S E M I C O N D U C T O R S D S3634 - 2.0 SL1640 IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR N EW DESIGNS SL1640 DOUBLE BALANCED MODULATORS The SL1640 is a double balanced modulator intended for use in radio systems at frequencies upto 75MHz. The SL1640
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S3634
SL1640
SL1640
75MHz.
1500ohm
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GEC 44 3A
Abstract: c1627a
Text: GEC P L E S S E Y S i augustes S E M I C O N D U C T O R S DS4148-3.3 MDFB51 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS V RRM 2500V 2212A Jf AV 24000A FSM 1000|lC Qr 6.0|is • Freewheel Diode. ■ D.C. Motor Drives. ■ Welding. K ■ High Frequency Rectification.
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DS4148-3
MDFB51
4000A
CB486.
GEC 44 3A
c1627a
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Untitled
Abstract: No abstract text available
Text: Si G E C PLESSEY PRELIM INARY INFORMATION DS4476 1.1 VP211 DUAL 90MHz 6-BIT ANALOG TO DIGITAL CONVERTER The VP211 is a dual 90MHz 6-bit Analog to Digital Converter designed for use in consumer satellite receivers and decoders, video systems, multimedia and
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DS4476
VP211
90MHz
VP211
10KHz
75x10
37bfiS2H
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY 43E D SEMICONDS E3 37bfiSS5 QOlEbEO 0 • P L S B GEC PLESSEY I S E M I C O N D U C T O R S H I _ 'S 1 -rO ' 0 & PRELIMINARY INFORMATION 2465-1.0 SP973T8 30MHz 8-BIT FLASH ADC TTL/CMOS OUTPUTS The SP973T8 is a wideband, full flash analog- to-digital
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37bfiSS5
SP973T8
30MHz
SP973T8
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S D.S.3920 2.0 SP5610 1.3GHz BI-DIRECTIONAL l2C BUS CONTROLLED SYNTHESISER The SP5610 is a single chip frequency synthesiser designed for TV tuning systems. Control data is entered in the standard l2C BUS format. The device contains 4 addressable
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SP5610
SP5610
bflS22
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