ELM34402AA
Abstract: P2003b p2003bvg
Text: 单 N 沟道 MOSFET ELM34402AA-N •概要 ■特点 ELM34402AA-N 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=8A ·Rds on < 20mΩ (Vgs=10V) ·Rds(on) < 32mΩ (Vgs=4.5V) ■绝对最大额定值 项目
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ELM34402AA-N
P2003BVG
JUL-25-2005
ELM34402AA
P2003b
p2003bvg
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM34402AA-N •General description ■Features ELM34402AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)
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ELM34402AA-N
ELM34402AA-N
P2003BVG
JUL-25-2005
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ELM34404AA
Abstract: No abstract text available
Text: 单 N 沟道 MOSFET ELM34404AA-N •概要 ■特点 ELM34404AA-N 是 N 沟道低输入电容，低工作电压， •Vds=60V 低导通电阻的大电流 MOSFET。 ·Id=5.5A ·Rds on < 55mΩ (Vgs=10V) ·Rds(on) < 75mΩ (Vgs=4.5V) ■绝对最大额定值 项目
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ELM34404AA-N
P5506BVG
SEP-30-2004
ELM34404AA
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FET-ME2N7002E
Abstract: me4856 P2003BVG OZ8602 ME4410A 37GF50000-C0 P2003b F50IXX 1U-10-04X-K oz815
Text: 5 D 4 3 2 1 Project Name : F50IXX Platform : Montevina Penryn CPU +Cantiga(NB)+ICH9M(SB)+NB9P/M D Schematic Version Change History PAGE CONTENT 1. INDEX 39. NB9P/M LVDS / TMDS 2. SYSTEM BLOCK DIAGRAM 40. NB9P/M SS / BIOS / HDCP 3. POWER DIAGRAM & SEQUENCE
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F50IXX
ICS9LPR365)
CH7318B)
RTL8102E
RTL8111C
IEEE1394A
JMB380)
IT8512
MAX8770)
F50IN0/IN5
FET-ME2N7002E
me4856
P2003BVG
OZ8602
ME4410A
37GF50000-C0
P2003b
1U-10-04X-K
oz815
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P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG
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O-263
P45N02LSG
P45N03LTG
P75N02LSG
P75N02LTG
P0903BSG
P0903BTG
P3055LSG
P3055LTG
P50N03LSG
P70N02LDG
p0603bdg
P60N03LDG
PA102FDG
P2503NPG
P45N02LDG
P0603BD
P1703BDG
P0403BDG
P3004ND5G
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Untitled
Abstract: No abstract text available
Text: シングル N チャンネル MOSFET ELM34402AA-N •概要 ■特長 ELM34402AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=8A ・ Rds on < 20mΩ (Vgs=10V) ・ Rds(on) < 32mΩ (Vgs=4.5V)
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ELM34402AA-N
P2003BVG
JUL-25-2005
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Asus
Abstract: 88E8056 INVERTER BOARD Asus A6 Touch pad synaptics p2003bvg QG82945PM P2003EVG 88e8056 Marvell asus f3 asus g41
Text: 5 4 LCD CRT 3 2 CPU LVDS YONAH 31W Z84J CLOCK GEN Intel Centrino Duo RGB 1 MEROM 34W ICS 954310 D D TV DAC TV-OUT THERMAL SENSOR FSB 667MHz MAX6657MSA S-Video & Composite Video MXM Module TMDS HDMI Transmitter Silicon Image SiI1930 PCIE X16 NORTH BRIDGE Intel 945PM
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667MHz
MAX6657MSA
SiI1930
945PM
533/667MHz
SLB9635
IT8511E
ALC882H
RR5722
Asus
88E8056
INVERTER BOARD Asus A6
Touch pad synaptics
p2003bvg
QG82945PM
P2003EVG
88e8056 Marvell
asus f3
asus g41
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM34402AA-N •General description ■Features ELM34402AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)
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ELM34402AA-N
ELM34402AA-N
P2003BVG
JUL-25-2005
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6265A
Abstract: M96-SCE RTL8111d kb3926 RTL8103 RTL8111DL SLG8SP626V C3198 RTL8103E p2003bvg
Text: 1 2 3 A 1 2 3 4 5 6 : : : : : : 5 6 7 8 01 UT12 SYSTEM DIAGRAM PCB STACK UP LAYER LAYER LAYER LAYER LAYER LAYER 4 DDRII DDRII-SODIMM1 TOP IN1 IN2 VCC IN3 BOT 667/800 MHz AMD Lion Sabie Griffin PAGE 7,8 DDRII DDRII-SODIMM2 CPU THERMAL SENSOR S1G2 Processor
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318MHz
ICS9LPRS476AKLFT--
SLG8SP626VTR--
RTM880N-795
RJ-45
Pin99
Pin34
Pin101
Pin101
6265A
M96-SCE
RTL8111d
kb3926
RTL8103
RTL8111DL
SLG8SP626V
C3198
RTL8103E
p2003bvg
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